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Photoessay: The author has been documenting the use of kava in different parts of the Pacific for several years, particularly in Tonga and in Auckland where its use is popular among members of communities that consume kava as part of their cultural tradition, and more recently a growing non-traditional user group. In this article, he reflects on his project to document the use of kava through photographs, the evolution of its use in traditional and non-traditional settings and discusses the most recent scientific studies of the drink.

Inversion of the yield curve has come to be viewed as a leading recession indicator. Unsurprisingly, some recent instances of inversion have attracted attention from economic commentators and policymakers about possible impending recessions. Using a variety of time series models and recent innovations in econometric method, this paper conducts quasi-real-time forecasting exercises to investigate whether the predictive capability of the yield curve extends to forecasting economic activity in general and whether removing the term premium component from yields affects forecast accuracy. The empirical findings for the US, Australia, and New Zealand show that forecast performance is not improved either by augmenting simplistic models with information from the yield curve or by making such a decomposition of yields. Results from similar research exercises in previous work in the literature are mixed. The results of the present analysis suggest possible explanations that reconcile these conflicting results.

The response of forests to climate change depends in part on whether the photosynthetic benefit from increased atmospheric CO2 (∆Ca = future minus historic CO2) compensates for increased physiological stresses from higher temperature (∆T). We predicted the outcome of these competing responses by using optimization theory and a mechanistic model of tree water transport and photosynthesis. We simulated current and future productivity, stress, and mortality in mature monospecific stands with soil, species, and climate sampled from 20 continental US locations. We modeled stands with and without acclimation to ∆Ca and ∆T, where acclimated forests adjusted leaf area, photosynthetic capacity, and stand density to maximize productivity while avoiding stress. Without acclimation, the ∆Ca-driven boost in net primary productivity (NPP) was compromised by ∆T-driven stress and mortality associated with vascular failure. With acclimation, the ∆Ca-driven boost in NPP and stand biomass (C storage) was accentuated for cooler futures but negated for warmer futures by a ∆T-driven reduction in NPP and biomass. Thus, hotter futures reduced forest biomass through either mortality or acclimation. Forest outcomes depended on whether projected climatic ∆Ca/∆T ratios were above or below physiological thresholds that neutralized the negative impacts of warming. Critically, if forests do not acclimate, the ∆Ca/∆T must be above ca 89 ppm⋅°C-1 to avoid chronic stress, a threshold met by 55% of climate projections. If forests do acclimate, the ∆Ca/∆T must rise above ca 67 ppm⋅°C-1 for NPP and biomass to increase, a lower threshold met by 71% of projections.

A novel ladder transmission line method (LTLM) that features eliminated parasitic resistance from contact metal and access electrodes, simple fabrication process, and $2\times 10^{-10}\Omega-\text{cm}^{2}$ resolution for highly-accurate extraction of specific contact resistivity $(\rho_{c})$ in the $\sim 10^{-10}$ to 10−9 $\Omega-\text{cm}^{2}$ regime is demonstrated. The current distribution and extraction of $\rho_{c}\text{ln}$ LTLM are verified by TCAD and numerical distributive-resistor-network method, respectively. The extraction error caused by the current spreading and crowding in LTLM are modeled, and design guidelines to achieve 10−10 $\Omega-\text{cm}^{2}$ resolution for $\rho_{c}$ extraction are provided. By applying LTLM to the Ni/p+-Ge 0.95 Sn 0.05 contact, a record-low $\rho_{c}$ down to $4.0\pm 2.0\times 10^{-10}\Omega-\text{cm}^{2}$ was obtained. LTLM is insensitive to variation of metal resistance, unlike the refined TLM (RTLM) which could overestimate $\rho_{c}$ by at least tens of times.

Contact resistance R c in the source/drain (S/D) regions of field-effect transistors (FETs) has increased significantly due to the shrinkage of contact area accompanied with the scaling of device dimensions in the past decades [1] . For the state-of-art transistor technology, the contact area is around 10×10 nm 2 [2] . R c , inversely proportional to the effective contact area, is the main parasitic resistance that limits the on-state current and switching speed of the device in the leading technology. To alleviate the impact of R c , an ultralow specific contact resistivity ρ c of less than 10 −9 Ω-cm 2 is required [3] .

For the first time, Ga ion implantation (Ga I/I) on in-situ Ga-doped Ge (Ge:Ga) and GeSn (GeSn:Ga) films at various temperatures (300 °C, 25 °C, and −100 °C) was investigated. It is found that cryogenic (−100 °C) and room temperature (RT, 25°C) Ga I/I retains strain and the high quality of the GeSn layer after Ga activation while hot Ga I/I (300 °C) degrades the crystalline quality due to the implantation-induced defects. An ultra-low specific contact resistivity $\rho_{c}$ of $8\times 10^{-10}\ \Omega-\text{cm}^{2}$ is achieved for Ti/p+ -GeSn contact by in-situ Ga doping followed by cryogenic or RT Ga I/I while $\rho_{c}$ increases to $2.3\times 10^{-9}\ \Omega-\text{cm}^{2}$ using hot Ga I/I. An ultra-low $\rho_{c}$ of $9\times 10^{-10}\ \Omega-\text{cm}^{2}$ is also demonstrated for in-situ Ga-doped Ge followed by RT Ga I/I. This is the first realization of sub- $10^{-9}\ \Omega-\text{cm}^{2}\ \rho_{c}$ on non-laser-annealed p-type Ge. The sub· $10^{-9}\ \Omega-\text{cm}^{2}\ \rho_{c}$ is thermally stable up to an annealing temperature of 500 °C.

The prevailing of mobile devices continuously drives the demand of advanced System on Chip (SOC) development. To meet the high density, high performance, high reliability, low power and scalability requirements, implant applications have been extensively explored, developed and adopted to bring 10nm device and 7nm FinFET Devices into high volume manufacture. In this talk, the key implant related device challenges for 7nm and beyond will be reviewed. Then, a summary of implant applications which will potentially improve SOC device performance and yield will be presented and proposed. With the novel implant approach, device leakage, reliability, contact resistance, and overall uniformity will be improved.

The aggressive scaling of semiconductor technologies with each node generates several opportunities for ion implantation solutions to address key scaling challenges (device performance, SCE, leakage, variability, reliability, etc.). Optimization of ion implantation and integration with annealing and other processes is providing pathways for incorporating new materials and device architectures for advanced nodes.

Decreased effectiveness of bones' adaptive response to mechanical loading contributes to age-related bone loss. In young mice, intermittent administration of parathyroid hormone (iPTH) at 20–80 μg/kg/day interacts synergistically with artificially applied loading to increase bone mass. Here we report investigations on the effect of different doses and duration of iPTH treatment on mice whose osteogenic response to artificial loading is impaired by age. One group of aged, 19-month-old female C57BL/6 mice was given 0, 25, 50 or 100 μg/kg/day iPTH for 4 weeks. Histological and μCT analysis of their tibiae revealed potent iPTH dose-related increases in periosteally-enclosed area, cortical area and porosity with decreased cortical thickness. There was practically no effect on trabecular bone. Another group was given a submaximal dose of 50 μg/kg/day iPTH or vehicle for 2 or 6 weeks with loading of their right tibia three times per week for the final 2 weeks. In the trabecular bone of these mice the loading-related increase in BV/TV was abrogated by iPTH primarily by reduction of the increase in trabecular number. In their cortical bone, iPTH treatment time-dependently increased cortical porosity. Loading partially reduced this effect. The osteogenic effects of iPTH and loading on periosteally-enclosed area and cortical area were additive but not synergistic. Thus in aged, unlike young mice, iPTH and loading appear to have separate effects. iPTH alone causes a marked increase in cortical porosity which loading reduces. Both iPTH and loading have positive effects on cortical periosteal bone formation but these are additive rather than synergistic., Highlights • iPTH causes dramatic intra-cortical porosity in the aged mouse tibia. • In trabecular bone, iPTH reduced some of the beneficial effects of mechanical loading. • Mechanical loading reverses some of the deleterious effects of iPTH in cortical bone. • The effects of iPTH and mechanical loading were additive.

We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (Φ n B ) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of Φ n B caused by S.

Plasma doping (PLAD), a high-throughput ion implantation technique capable of achieving ultrashallow junctions and conformal doping of 3-D structures such as fin field-effect transistors, is investigated as an alternative to conventional beam-line ion implantation for InGaAs at advanced technology nodes. The PLAD at an elevated substrate temperature (ET-PLAD) is studied and reported for InGaAs for the first time. The ET-PLAD can give lower sheet resistance than room-temperature PLAD due to enhanced dopant incorporation. More crucially, an ET can help to prevent amorphization. After dopant activation anneal, residual corner defects are observed in small fins that are amorphized during plasma ion implantation, whereas fins that remain crystalline during plasma ion implantation are free of corner defects.

Data from the newly-commissioned \textit{Transiting Exoplanet Survey Satellite} (TESS) has revealed a "hot Earth" around LHS 3844, an M dwarf located 15 pc away. The planet has a radius of $1.32\pm 0.02$ $R_\oplus$ and orbits the star every 11 hours. Although the existence of an atmosphere around such a strongly irradiated planet is questionable, the star is bright enough ($I=11.9$, $K=9.1$) for this possibility to be investigated with transit and occultation spectroscopy. The star's brightness and the planet's short period will also facilitate the measurement of the planet's mass through Doppler spectroscopy., 10 pages, 4 figures. Submitted to ApJ Letters. This letter makes use of the TESS Alert data, which is currently in a beta test phase, using data from the pipelines at the TESS Science Office and at the TESS Science Processing Operations Center

In this paper, we first review the trends for advanced CMOS devices in terms of architectures and scalability. The paper highlights the key process challenges for planar MOSFET and FinFET device technologies. We emphasize the need for advanced implant solutions to enable device scaling and performance as well as variability improvement. Especially, we discuss the latest damage engineering solutions as well as materials modification techniques (e.g., contact and strain engineering) to reduce leakage, improve drive current and process margin with reduced variability. Finally, we briefly discuss the implications and new challenges coming from novel channel material devices (e.g., silicon-germanium, germanium, and III–V).

We demonstrate a novel technique to reduce the nickel silicide (NiSi) contact resistance Rcon in strained n-channel MOSFETs (n-FETs) with silicon carbon (Si:C) stressors, where a presilicide aluminum (Al) implant is performed and the Al profile is found to be affected by carbon (C). Al diffusion during silicidation is retarded by the presence of C and a high Al concentration is retained within the NiSi:C film, which is considered to be the main reason for electron barrier height ΦBn reduction in NiSi:C contacts. Ge preamorphization implant prior to Al implant further reduces the ΦBn to 0.44 eV. Integration of this technique in n-FETs with Si:C stressors achieves a 50% reduction in source/drain series resistance and 12% enhancement in saturation drive current. Negligible impact on the device short-channel effects is observed. When Al segregates at the NiSi/Si interface, the hole barrier height ΦBp is lowered, and such an Al profile can be used for the p-FETs. Al profile engineering shows a promise as a single-metal-silicide solution for selective Rcon optimization in CMOS.

The process of modeling pedestrian volume in San Francisco, California, refined the methodology used to develop previous intersection-based models and incorporated variables that were tailored to estimate walking activity in the local urban context. The methodology included two main steps. First, manual and automated pedestrian counts were taken at a sample of 50 study intersections with a variety of characteristics. A series of factor adjustments was applied to produce an estimate of annual pedestrian crossings at each intersection. Second, log-linear regression modeling was used to identify statistically significant relationships between the estimate of annual pedestrian volume and land use, transportation system, local environment, and socioeconomic characteristics near each intersection. Twelve alternative models were considered, and the preferred model had a good overall fit (adjusted R2 = .804). As identified in other communities, pedestrian volumes were positively associated with the number of households and the number of jobs near each intersection. This San Francisco model also found significantly higher pedestrian volumes at intersections (a) in high-activity zones with metered on-street parking, (b) in areas with fewer hills, (c) near university campuses, and (d) under the control of traffic signals. Because the model was based on a relatively small sample of intersections, the number of significant factors was limited to six. Results are being used by public agencies in San Francisco to understand the risks of pedestrian crossings better and to inform citywide pedestrian safety policy and investment.

The 10−7 nm CMOS nodes require that ρc be reduced to < 2E-9 Ω.cm2. Fermi level for most metals is pinned at mid-gap, resulting in a challenge to decrease SBH. There are several implant solutions, such as thermal implants, that can be leveraged to benefit the FinFET doping of SDE, SD and contact module for scaled CMOS.

The purpose of this paper is to present an apphcation of Goal Programming (GP) to the Army Officer Accession Planning problem. The GP model aids the Army’s Officer Personnel Management Directorate ...

This letter reports the demonstration of preamorphization implant (PAI) using germanium (Ge) and carbon (C) and its combination with presilicide sulfur (S) implant for Schottky barrier height (SBH) tuning of nickel silicide (NiSi)-silicon contacts. Ge and C PAI increases the threshold temperature for agglomeration of a NiSi film, thus enhancing its thermal stability. A presilicide S implant and its segregation at metal/semiconductor interface effectively lowers the effective electron SBH ΦBn to 0.18 eV. In addition, the distribution of reverse current in the NiSi/n-type Si contact is improved with the introduction of Ge and C PAI.

We investigated the effect of phosphorus ion (P+) implant temperature on the material properties of epitaxial GeSn alloy and the electrical characteristics of GeSn n+/p diodes. Hot P+ implant maintains the single crystallinity of GeSn during implant. In addition, samples implanted at elevated temperature followed by a subsequent RTA at 450 °C for 3 minutes achieve a lower contact resistivity compared with those implanted at room temperature, indicating a higher P dopant activation.

FinFET has emerged as a device structure to enable the device scaling at and beyond the 22nm technology node due to increasingly stringent demands for maximum device speed, lower leakage current and control of random dopant fluctuation effects. High-k dielectric (Hik)/metal gate (MG) technology makes it feasible to obtain improved Effective Oxide Thickness (EOT) scaling and reduced leakage. Replacement metal gate (RMG) flows have been used for high performance logic volume production at and beyond 45nm node [1]. Precise threshold voltage (Vt) control and multiple Vt are required for FinFET device architectures for future devices. This paper proposes an ion implantation approach for modulating metal gate work function for both n-metal and p-metal gate used in a HiK last and replacement gate process. This approach offers simplified integration flow where no additional mask is needed and resist mask can be used. The effective work function (eWF) was measured along with the EOT and Gate Leakage (Jg). Stress Induced Leakage Current (SILC) method was used for testing HiK stack reliability. The results showed up to 200mV eWF modulation by ion implantation with fine control and without EOT and Jg degradation. The effect of implant species and dose on the eWF was studied in this paper. SIMS analysis of HKMG stack on the blanket wafer was used to determine the dopant distribution and explore the possible mechanism for metal gate work function modulation by ion implantation.

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Angle control has been widely accepted as the key requirement for ion implantation in semiconductor device processing. From an ion implanter point of view, the incident ion direction should be measured and corrected by suitable techniques, such as XP-VPS for the VIISta implanter platform, to ensure precision ion placement in device structures. So called V-curves have been adopted to generate the wafer-based calibration using channeling effects as the Si lattice steer ions into a channeling direction. Thermal Wave (TW) or sheet resistance (Rs) can be used to determine the minimum of the angle response curve. Normally it is expected that the TW and Rs have their respective minima at identical angles. However, the TW and Rs response to the angle variations does depend on factors such as implant species, dose, and wafer temperature. Implant damage accumulation effects have to be considered for data interpretation especially for some “abnormal” V-curve data. In this paper we will discuss some observed “abnormal” angle responses, such as a) TW/Rs reverse trend for Arsenic beam, 2) “W” shape of Rs Boron, and 3) apparent TW/Rs minimum difference for high tilt characterization, along with experimental data and TCAD simulations.

In this work, we report the use of Aluminum ion implantation to modulate the threshold voltage for Hf-based high-k /TiN metal gate PMOS FinFETs on SOI. A positive 170mV VFB shift with 0.8A reduction in CETinv was achieved by implanting Aluminum at shallow tilt angle into TiN on the sidewalls of FinFETs. The Al was thermally driven during the SD activation anneal to form dipoles in the high-k dielectric to tune the PMOS Vt, resulting in 8% performance improvement in PMOS Ion/Ioff, without degrading short channel effects. These results demonstrate key progress towards realizing multi-Vt FinFET device architectures for 20nm node and beyond. Remote interfacial layer scavenging of oxygen induced by the metal gate dopants has an added advantage of improving the CET, without impacting short channel behavior.

Nickel silicide (NiSi) contacts are adopted in advanced CMOS technology nodes as they demonstrate several benefits such as low resistivity, low Si consumption and formation temperature. But a disadvantage of NiSi contacts is that they exhibit high electron Schottky barrier height (SBH), which results in high contact resistance (Rc) and reduces the NMOS drive current. To reduce SBH for NMOS, we used phosphorous (P) ion implantation into NiPt silicide with optimized anneal in order to form dopant segregated Schottky (DSS). Electrical characterization was performed using test structures such as Transmission Line Model, Cross-Bridge Kelvin Resistor, Van der Pauw and diodes to extract Rc and understand the effects of P+ DSS on ΦBn tuning. Material characterization was performed using SIMS, SEM and TEM analysis. We report ∼45% reduction in Rc over reference sample by optimizing ion implantation and anneal conditions (spike RTA, milli-second laser anneals (DSA)).

CMOS Image Sensors (CIS) can suffer from yield loss due to metal impurities, which act as generation and recombination centers, giving rise to higher dark currents than the original signal current, resulting in “White Pixel” defects. Metal impurities can enter the silicon surface during processing and diffuse during thermal steps to the vicinity of the photodiode device region. The goal of intrinsic gettering is to trap metallic impurities in a deep buried layer away from the device region. This paper describes a novel process for metals gettering with a cryogenic carbon implant, followed by a high temperature gettering anneal cycle, to form a much deeper buried and distinct defect layer. This technique also provides an effectively recrystallized, defect-free surface region after anneal, which is suitable for the subsequent growth of a defect-free epitaxial film for device fabrication. The physical mechanism involved in the gettering process will be discussed.

We report a new technique of achieving reduced nickel silicide contact resistance in strained n-FETs, where a pre-silicide Aluminum (Al) implant was introduced, and the Al profile was controlled/engineered by Carbon (C). C suppresses Al diffusion during silicidation, hence retaining high concentration of Al within the NiSi. Incorporating Al within NiSi reduces the Schottky barrier height for n-Si:C contact, leading to 18 % I On improvement for Si:C S/D nFETs with no compromise on short channel effects.

Co-implantation has been proven to be an effective method to reduce Transient Enhanced Diffusion (TED). In this paper, the effect of Carbon co-implant energy, dose, and combined with Fluorine implants were investigated to control TED for a contact Phosphorus. With optimized co-implant conditions, Dynamic Random Access Memory (DRAM) device wafers were used to verify that the Epi process window can be enlarged due to better control of Phosphorus TED. The study revealed that Carbon suppresses the Phosphorus diffusion tailing and reduces Gate Induced Drain Leakage (GIDL) without degrading Vt and contact resistance performances. With the reduction of Phosphorus diffusion and GIDL, thinner selective Epi layer can be tolerated, resulting in widened process window of Epi final thickness and increased selective Epi process margin.

As CMOS devices continue to shrink, the formation of ultra shallow junction (USJ) in the source/drain extension remains to be a key challenge requiring high dopant activation, shallow dopant profile and abrupt junctions. The next generations of sub nano‐CMOS devices impose a new set of challenges such as elimination of residual defects resulting in higher leakage, difficulty to control lateral diffusion, junction stability post anneal and junction formation in new materials. To address these challenges for advanced technological nodes beyond 32 nm, it is imperative to explore novel species and techniques. Molecular species such as Carborane (C2B10H12), a novel doping species and a promising alternative to monomer Boron is of considerable interest due to the performance boost for 22 nm low power and high performance devices. Also, to reduce residual defects, damage engineering methodologies have generated a lot of attention as it has demonstrated significant benefits in device performance. Varian proprieta...

We report the first demonstration of a contact technology employing a combination of low energy Aluminum (Al) ion implantation and pulsed laser anneal (PLA) to form nickel silicide (NiSi) with low hole effective Schottky barrier height (Φ B p) on Si. First, the Al implant energy is reduced over prior work to ensure compatibility with thinner NiSi contacts. Second, the effect of PLA on silicide contact formation is investigated. Third, we show that increasing Al concentration at the silicide/Si interface while keeping the Al concentration within the silicide low is vital for reducing Φ B p. Successful implementation of the contact technology leads to ~77 % reduction in Φ B p, achieving a low Φ B p of 0.104 eV. This opens up new options to lower Φ B p with reduced thermal budget for future technology generations.

We present measurements of the luminosity and mass functions of low-mass stars constructed from a catalog of matched Sloan Digital Sky Survey (SDSS) and 2 Micron All Sky Survey (2MASS) detections. This photometric catalog contains more than 25,000 matched SDSS and 2MASS point sources spanning ~30 square degrees on the sky. We have obtained follow-up spectroscopy, complete to J=16, of more than 500 low mass dwarf candidates within a 1 square degree sub-sample, and thousands of additional dwarf candidates in the remaining 29 square degrees. This spectroscopic sample verifies that the photometric sample is complete, uncontaminated, and unbiased at the 99% level globally, and at the 95% level in each color range. We use this sample to derive the luminosity and mass functions of low-mass stars over nearly a decade in mass (0.7 M_sun > M_* > 0.1 M_sun). We find that the logarithmically binned mass function is best fit with an M_c=0.29 log-normal distribution, with a 90% confidence interval of M_c=0.20--0.50. These 90% confidence intervals correspond to linearly binned mass functions peaking between 0.27 M_sun and 0.12 M_sun, where the best fit MF turns over at 0.17 M_sun. A power law fit to the entire mass range sampled here, however, returns a best fit of alpha=1.1 (where the Salpeter slope is alpha = 2.35). These results agree well with most previous investigations, though differences in the analytic formalisms adopted to describe those mass functions can give the false impression of disagreement. Given the richness of modern-day astronomical datasets, we are entering the regime whereby stronger conclusions can be drawn by comparing the actual datapoints measured in different mass functions, rather than the results of analytic analyses that impose structure on the data a priori. (abridged), Accepted for publication in the Astronomical Journal. 21 pages, emulateapj format, 12 figures. Figures 1, 4, 11 and 12 degraded for astroph; full resolution version available for download at http://www.cfa.harvard.edu/~kcovey/

We have investigated the optical properties of Ge and GeSn alloys implanted with phosphorus ions at 400 °C by spectroscopic ellipsometry from far-infrared to ultraviolet. The dielectric response of heated GeSn implants displays structural and transport properties similar to those of heated Ge implants. The far-infrared dielectric function of as-implanted Ge and GeSn shows the typical free carrier response which can be described by a single Drude oscillator. Bulk Ge-like critical points E1, E1 + Δ1, E0', and E2 are observed in the visible-UV dielectric function of heated Ge and GeSn indicating single crystalline quality of the as-implanted layers. Although the implantation at 400 °C recovers crystallinity in both Ge and GeSn, an annealing step is necessary to enhance the carrier activation.

Periodically, representatives from the United States Army Recruiting Command (USAREC), the Office of the Deputy Chief of Staff Personnel (DCSPER) and the Personnel Command (PERSCOM) meet to form the Enlisted Incentive Review Board (EIRB). The task of the EIRB is to determine the enlistment incentives to offer for each MOS to ensure the Army meets recruiting goals while remaining within the recruiting budget. The current method of assigning enlistment incentives does not consider recruit preferences for incentives and thus cannot predict the number of enlistments for a given incentive nor can it evaluate the effects of new incentives. The EIRB requires a quantitative decision support tool that will assist the members in doing the following: predict the number of individuals who will enlist into a given MOS over a certain time of service for a given incentive; determine the optimal mix of incentives to offer for each MOS to meet its recruiting goal; minimize the deviation from the recruiting goals for each MOS to remain within the recruiting budget. This paper describes the methodology used to create such a decision support tool, known as the Enlisted Bonus Distribution Model.

We investigate the tuning of Schottky barrier height (SBH) of nickel silicide formed by pulsed excimer laser anneal of nickel on silicon implanted with aluminum (Al). A wide range of laser fluence was investigated, and it has been found that laser fluence influences the distribution of Al within the silicide and at the silicide/silicon interface. This in turn affects the effective whole SBH (ΦBp) at the silicide/silicon junction. High Al concentration at the silicide/silicon interface and high temperature for nano-second duration to achieve Al activation while keeping the Al concentration within the silicide low is vital for achieving low ΦBp. We demonstrate the achievement of one of the lowest reported ΦBp of ∼0.11 eV. This introduces a new option for forming nickel silicide contacts with reduced contact resistance at low thermal budget for possible adoption in future metal-oxide-semiconductor transistor technologies.

By the death at Baltimore on the ninth of November, 1910, of A. Marshall Elliott, professor of the Romance languages in the Johns Hopkins University, there has been stricken from the roll of active service the most conspicuous name in the contemporary annals of Modern Language instruction in America. Associated by family ties with the circle of Friends in the city of Baltimore, Mr. Elliott, from the earliest announcement of the Johns Hopkins endowment, was prominently mentioned in connection with a professorship in the new institution,—tho it is known that his own predilection was at that time toward the prosecution' of Oriental rather than Romance investigation. At the opening of the University in 1876, Elliott was only thirty-two years of age, but his reputation was already re-enforced by academic degrees from Haverford and Harvard Colleges and by prolonged travel and study in Europe and the Orient.

An overview of American scholarly contributions to literature studies in the year 1909. Includes sections on general and comparative subjects, French, Italian and Spanish.

An overview of American scholarly contributions to literature studies in the year 1909. Includes sections on general, French, Italian and Spanish.

News and notes about authors in the world of Romance Literature. This section tells readers about recent award recipients, changes on college campuses, and people getting new jobs, among other things.

News and notes about important people in the world of Romance Literature. This section tells readers about recent award recipients, changes on college campuses, and people getting new jobs, among other things.

An important change with regard to French and German has been established at Harvard. For many years, French A and German A have been required of all candidates for the A.B. degree. In addition to this, there is now to be a special oral examination to precede admission to the Junior class. This new test will make doubly sure that all the students can use French and German freely in literary and scientific courses before the beginning of the studies of the Junior year. A reading, and not a speaking, knowledge is what is to be insisted upon. All who are interested in discovering the truth concerning the French occupation of territory within the limits of the present United States should read the volume by C. W. Alvord: Kaskaskia Records, which is briefly mentioned among our reviews. This section of Romanic Review includes news form different academic institutions as well as the works of various scholars in the field.

At the moment of going to press, news is received of the sudden death, from an attack of cerebral hemorrhages, of John E. Matzke, since 1893 Professor of Romanic Languages at Stanford University, and widely known both in this country and abroad, for his important contributions to Romance scholarship.

News and notes about important people in the world of Romance Literature. This section tells readers about recent award recipients, changes on college campuses, and people getting new jobs, among other things.