1. In-situ revealing the degradation mechanisms of Pt film over 1000 °C
- Author
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Wang Menglong, Xinliang Wang, Li Xiaochen, Jin Ning, Shengcheng Mao, Zhang Qing, Xiaodong Han, Zhipeng Li, Ma Dongfeng, Jiao Teng, Ze Zhang, and Zhiyong Tian
- Subjects
Materials science ,Polymers and Plastics ,Mechanical Engineering ,Triple junction ,Metals and Alloys ,Nucleation ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Stress (mechanics) ,Mechanics of Materials ,Materials Chemistry ,Ceramics and Composites ,Coupling (piping) ,Degradation (geology) ,Grain boundary ,Thin film ,Composite material ,0210 nano-technology ,Nanoscopic scale - Abstract
Degradation of a metallic film under harsh thermal-mechanical-electrical coupling field conditions determines its service temperature and lifetime. In this work, the self-heating degradation behaviors of Pt thin films above 1000 °C were studied in situ by TEM at the nanoscale. The Pt films degraded mainly through void nucleation and growth on the Pt-SiNx interface. Voids preferentially formed at the grain boundary and triple junction intersections with the interface. At temperatures above 1040 °C, the voids nucleated at both the grain boundaries and inside the Pt grains. A stress simulation of the suspended membrane suggests the existence of local tensile stress in the Pt film, which promotes the nucleation of voids at the Pt-SiNx interface. The grain-boundary-dominated mass transportation renders the voids grow preferentially at GBs and triple junctions in a Pt film. Additionally, under the influence of an applied current, the voids that nucleated inside Pt grains grew to a large size and accelerated the degradation of the Pt film.
- Published
- 2021