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Synthesis and application of InP/ZnS quantum dots (InP/ZnS QDs) were synthesized via non-coordinated system. The structural model of InP/ZnS QDs was completed by using composition analysis, absorption spectroscopy and emission spectroscopy. Furthermore, their applications as phosphors were investigated. The ZnS shell-growth temperature and time was controlled to obtain QDs with different sizes and the emission wavelength. Finally, a white LED was fabricated with InP/ZnS QDs.

Multimedia technology has played an important role in modern computing because it offers more natural and user-friendly interactions with an automated system. This is particularly true for systems utilizing graphical, icon or window-based input and output. Multimedia technology also facilitates "reuse" more naturally, since the basic components and functions of presentation and animation can be reused for several different animation scenarios. This is evidenced by the rapid prototyping capability of computer and video games where although the characters and story lines change, the basic animation remains constant. In this paper we utilize multimedia technology for eliciting requirements of software systems, particularly those systems that utilize windows- (or graphical)-based interactions with the user. Our methodology will implicitly emphasize reuse since in our approach reusable components include not only code and documents, but also voice narration, animation sequences and message mechanisms. We call such software components as multimedia reusable components (MRCs). Using MRCs, one can view software requirements instead of reading textual representation of the requirements.

We report study of the stability of ultra-thin Al films deposited on GaAs(100) using positron annihilation induced Auger electron spectroscopy (PAES). After the sample was kept for 7 days at 300 K under UHV conditions, the normalized Al PAES intensity decreased by 33.7±4.6%. Over the same time period, the normalized Ga PAES intensity increased by 55.8±4.8%. PAES spectra provide a direct method of confirming the substitution of Ga for Al in the top layer and Ga diffuse into the Al overlayer faster than As.