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In this paper, the speech recognition algorithms using CNN deep learning based on the sparse discrete wavelet decomposition (SDWD) and bandpass filter banks (BPFB) are proposed. The proposed algorithms consist of three stages. First, speech signal is decomposed into sub-band signals according to the Mel filter bank frequency specification using the SDWD or BPFB. The power values from sub-bands form a feature vector for the speech frame. Cascading feature vectors for consecutive speech frames constructs a two-dimension feature image. Secondly, each obtained feature image is subject to flipping operations in order to reduce edge effect when using the standard CNN. Finally, the CNN deep learning is adopted for training and recognition. The experimental results demonstrate that our proposed SDWD-CNN and BPFB-CNN outperforms the support vector machine (SVM), K-nearest neighbors (KNN), and random forest (RF) algorithms.

The electrical properties of ultrathin nitride/oxide (N/O) stack dielectrics (2-4 nm), produced by in-situ jet vapor deposition (JVD), have been studied in some detail. Both theoretical calculation and experimental data show that the leakage current in the N/O stack is substantially lower than that in the single oxide layer of the same equivalent oxide thickness (EOT). When compared to the single nitride layer, the N/O stack yields a lower leakage current in the 3-nm thickness regime. In the 2-nm thickness regime, however, the leakage currents in the single nitride layer and the N/O stack are comparable. The tunneling current in the N/O stack depends not only on the thickness combination of the nitride and the oxide layers, but also on the injection polarity. Other important electrical properties of the N/O stack, including time-dependent-dielectric-breakdown (TDDB), stress-induced leakage current (SILC), carrier trapping, and interface characteristics are also reported. High quality field-effect transistors have been made of the N/O stack, and their properties will be reported.

The leakage current in high-quality ultrathin silicon nitride/oxide (N/O) stack dielectric is calculated based on a model of one-step electron tunneling through both the nitride and the oxide layers. The results show that the tunneling leakage current in the N/O stack is substantially lower than that in the oxide layer of the same equivalent oxide thickness (EOT). The theoretical leakage current in N/O stack has been found to be a strong function of the nitride/oxide EOT ratio: in the direct tunneling regime, the leakage current decreases monotonically as the M/O ratio increases, while in the Fowler-Nordheim regime the lowest leakage current is realized with a N/O EOT ratio of 1:1. Due to the asymmetry of the N/O barrier shape, the leakage current under substrate injection is higher than that under gate injection, although such a difference becomes smaller in the lower voltage regime. Experimental data obtained from high quality ultrathin N/O stack dielectrics agree well with calculated results.

Silicon nitride and oxynitride films are known to possess a number of attractive properties over thermal SiO/sub 2/ as gate dielectric for Field-Effect Transistors (FETs), including better resistance to impurity diffusion and higher dielectric constant. However, their poor interface properties have prevented their use as a mainstream gate dielectric. Even in the case of nitrodized oxides where the nitrogen content is minute, the reduced peak transconductance for n-channel transistors is still a major concern for many applications, despite their much improved reliability. This paper shows that a modest annealing treatment in a steam furnace yields dramatic improvement of FET's transconductance as well as its current driveability for devices containing nitrided gate while preserving their excellent reliability. Only results on silicon nitride based MNS devices are included.

Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si/sub 3/N/sub 4/, ZrO/sub 2/ and ZrSiO/sub 4/ was verified by good carrier mobility agreement with the universal mobility model.

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