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We propose a transistor-like circuit including two serially connected segments of a narrow superconducting nanowire joint by a wider segment with a capacitively coupled gate in between. This circuit is made of amorphous NbSi film and embedded in a network of on-chip Cr microresistors ensuring a sufficiently high external electromagnetic impedance. Assuming a virtual regime of quantum phase slips (QPS)in two narrow segments of the wire, leading to quantum interference of voltages on these segments, this circuit is dual to the dc SQUID. Our samples demonstrated appreciable Coulomb blockade voltage (analog of critical current of the SQUIDs) and periodic modulation of this blockade by an electrostatic gate (analog of flux modulation in the SQUIDs). The model of this QPS transistor is discussed., Comment: 5 pages including 3 figures; in v2 the title was updated, typos were fixed and 4 references added

Electron counting experiments attempt to provide a current of a known number of electrons per unit time. We propose architectures utilizing a few readily available electron-pumps or turnstiles with the typical error rates of 100 ppm with common sensitive electrometers to achieve the desirable accuracy of 1 part in 10 ppb. This is achieved not by counting all transferred electrons but by counting only the errors of individual devices; these are less frequent and therefore readily recognized and accounted for. We thereby ease the route towards quantum based standards for current and capacitance., Comment: submitted for publication

We have analyzed quasiparticle transitions in an Al charge-phase qubit inducing a dynamic change of the qubit states. The time-averaged mixed state is related to the strong coupling of the qubit to an ensemble of non-equilibrium quasiparticles in the leads. Such quasiparticles tunnel stochastically on and off the island and can excite the qubit. Continuous monitoring of the qubit impedance at a frequency of 80 MHz shows the admixture of the excited state. We present a numerical description of these cyclic transitions and compare it with our experimental data., Comment: 13 pages, 3 figures

Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry., Comment: 3 pages; 2 figures

A capacitance standard based on the definition of capacitance C = Ne/U is realized when a capacitor is charged with a known number N of electrons (e is the elementary charge) and the voltage U across the capacitor is measured. If U is measured by means of a Josephson voltage standard, C is solely determined by quantum numbers and fundamental constants. Presently, PTB is setting up this experiment using a special type of single-electron pump, the so-called r-pump, for transferring electrons one by one onto a cryogenic vacuum capacitor with the decadic capacitance C = 1 pF. We report on the progress in the setup with emphasis on the characterization of the single-electron tunneling elements. We describe the modifications of the single-electron circuit that are necessary to implement the capacitor charging experiment by using a four- or five-junction r-pump., 11 pages, 5 figures

We demonstrate that shunting of Superconductor-Insulator-Superconductor Josephson junctions by Superconductor-Insulator-Normal metal (S-I-N) structures having pronounced non-linear I-V characteristics can remarkably modify the Josephson dynamics. In the regime of Josephson generation the phase behaves as an overdamped coordinate, while in the superconducting state the damping and current noise are strikingly small, that is vitally important for application of such junctions for readout and control of Josephson qubits. Superconducting Nb/AlO${_x}$/Nb junction shunted by Nb/AlO${_x}$/AuPd junction of S-I-N type was fabricated and, in agreement with our model, exhibited non-hysteretic I-V characteristics at temperatures down to at least 1.4 K., Comment: 4 pages incl. 3 figures

The Cooper pair box qubit of SQUID configuration enables the readout of the qubit states by probing the effective Josephson inductance of the SQUID. This is realized by coupling the qubit to a tank circuit which induces a small alternating supercurrent in the SQUID loop. The effect of a small (but finite) geometrical inductance of the loop on the eigenstates of the system is figured out. The effect of qubit dephasing due to quadratic coupling to the tank circuit is evaluated. It is shown that the rate of dephasing in the vicinity of the magic points is relatively low unless the Josephson junctions forming the qubit are rather dissimilar. In the vicinity of the avoided level-crossing point such dephasing is always significant., Comment: 10 pages incl. 2 figures

We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In our samples with relatively large charging energy values Ec > EJ, where EJ is the energy of the Josephson coupling, two transport mechanisms were found to be dominating, both based on discrete tunneling of individual Cooper pairs: Depending on the gate voltage Vg, either sequential tunneling of pairs via the transistor island (in the open state of the transistor around the points Qg = CgVg = e mod(2e), where Cg is the gate capacitance) or their cotunneling through the transistor (for Qg away of these points) was found to prevail in the net current. As the open states of our transistors had been found to be unstable with respect to quasiparticle poisoning, high-frequency gate cycling (at f ~ 1 MHz) was applied to study the sequential tunneling mechanism. A simple model based on the master equation was found to be in a good agreement with the experimental data., 8 pages, 6 figures

We report on the effect of the frequency-locked transfer of single Cooper pairs in a superconducting single-electron Al transistor embedded in a dissipative environment (on-chip Cr resistor of R = 40 kOhm). The transistor was dc voltage biased, and the harmonic signal of frequency f of several MHz was applied to the gate. Due to the substantial rate of relaxation, the unidirectional transfer of single pairs occurred in each junction once per clock cycle and the current plateaus at I = 2ef were developed in the transistor's I-V curves. The mechanisms (supercurrent, Landau-Zener tunneling, quasiparticle tunneling, etc.) deteriorating the phase-locking regime are discussed., 5 pages incl. 3 figures

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel junctions of traditional SETs. Our transistor with a total asymptotic resistance of 110 kOhm showed a very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wide ranges of bias currents I and gate voltages V_g. In the Coulomb blockade region (|V| < 0.5 mV), we observed a strong suppression of the cotunneling current allowing appreciable modulation curves V-V_g to be measured at currents I as low as 100 fA. The noise figure of our SET was found to be similar to that of typical Al/AlOx/Al single-electron transistors., 5 pages incl. 4 figs

We propose a circuit comprising a linear array of three small-capacitance superconducting tunnel junctions with miniature resistors (R > R_Q = h/4e^2 = 6.5 kOhm) attached to the ends of this array. Owing to the Coulomb blockade effect and the effect of dissipative environment on the supercurrent, this circuit enables the gate-controlled transfer of individual Cooper pairs. The first experiment on operating the Al-Cr Cooper pair R-pump is described., Reported at International Workshop on "Macroscopic Quantum Coherence and Computing - MQC2" (14-17 June, 2000, Naples, Italy)

We report on the operation of a single electron trap comprising a chain of four Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and, at the other side, to a miniature on-chip Cr resistor R=50 kOhm which served to suppress cotunneling. At appropriate voltage bias the bi-stable states of the trap, with the charges differing by the elementary charge e, were realized. At low temperature, spontaneous switching between these states was found to be infrequent. For instance, at T=70 mK the system was capable of holding an electron for more than 2 hours, this time being limited by the time of the measurement., 3 pages of text and 2 figures

The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island with a dielectric substrate in the set of Al transistors located on the same chip and having almost similar electric parameters. We have found that the smaller the contact area the lower the noise level of the transistor. The lowest noise value 8*10E-6 e/sqrt(Hz) at f = 10 Hz. has been measured in a stacked transistor with an island which was completely isolated from a substrate. Our measurements have unambiguously indicated that the dominant source of the background charge fluctuations is associated with a dielectric substrate, Comment: Review paper, latex, 10 pages, 7 figures, to be publ. in JLTP, 2000; Proceeding of "Electron Transport in Mesoscopic Systems", August 12-15, 1999 Geteborg, Sweden, http://fy.chalmers.se/meso_satellite/index.html See also LT22 manuscript: http://lt22.hut.fi/cgi/view?id=S11138

A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single electron transistor made of 0.1 square micrometer area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate., Comment: 3 pages, 4 figures