1. CMP of GaN using sulfate radicals generated by metal catalyst
- Author
-
Xu Li, Zou Chunli, Pan Guoshun, Shi Xiaolei, and Yuyu Liu
- Subjects
inorganic chemicals ,Chemical substance ,Materials science ,Inorganic chemistry ,Gallium nitride ,law.invention ,chemistry.chemical_compound ,Magazine ,chemistry ,law ,Chemical-mechanical planarization ,Activator (phosphor) ,Surface roughness ,Slurry ,Science, technology and society - Abstract
A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO 4 −) oxidizer and Fe2+ activator in slurry is presented. The results indicate that complexing agent with Fe2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.
- Published
- 2014