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1. Internal loss in diode lasers with quantum well-dots

2. Bimodality in the electroluminescence spectra of quantum well-dots InGaAs nanostructures

3. Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots

4. High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors

5. A GaInP-based photo-converter of laser radiation with an efficiency of 46.7% at a wavelength of 600 nm

6. Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell

7. Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the i-region

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