1. Measurement of Local Electric Fields and the Onset of Breakdown in Ultra-wide Band Gap Semiconductor Devices using Photocurrent Spectroscopy
- Author
-
Verma, Darpan
- Subjects
- Materials Science, Engineering, Electrical Engineering, Photocurrent spectroscopy, Ultra-wide-bandgap semiconductors, Local Electric Field, Power electronic devices, Beta Gallium Oxide ( − 23), Gallium Nitride (GaN), Manganese Phosphorus Triselenide (MnPSe3)
- Abstract
Ultra-wide-bandgap (UWBG) materials-based power electronic devices suffer from unexpected and uncertain locations of non-uniformity, and high fields degrade these devices, limiting their lifetimes. It is a challenge to identify the exact locations of breakdown (hot spots), and often destructive processes are used, which are costly, time- consuming, and often not realistic. The work presented here is an attempt to demonstrate a non-destructive and reliable photocurrent spectroscopy technique based on the exciton Franz-Keldysh effect in probing the local electric field (F). By including the excitonic effect in quantitatively modeling the absorption lineshape (and, in turn, photocurrent responsivity), F values are estimated while exploring a wide range of physics. A probe that measures F locally is an extremely useful tool for mapping out the F distribution, performing reliability testing, locating hot and cold spots, validating, or refining electrostatic models, and optimizing device geometry. Analyzing the F-dependent responsivity has shed insight into the contributions of self-trapped excitons and self- trapped holes in − 23 to the photocurrent-production pathway. Polarization- dependent photocurrent spectroscopy is also performed to verify various excitonic transitions, identify the crystallographic axes, and understand their behavior with the applied bias. For solar-blind photodetectors, light polarization could help to make PDs more selective to deep UV wavelengths.
- Published
- 2023