53 results on '"Kamp M"'
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2. Antiferromagnetic order in MnBi2Te4 films grown on Si(1 1 1) by molecular beam epitaxy
3. Minispectrometer with handheld probe for 5-ALA based fluorescence-guided surgery of brain tumors: Preliminary study for clinical applications
4. Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime
5. Demographic and polygenic profiles of selective serotonin reuptake inhibitor users in UK Biobank
6. 30P CD4+ T cells within the tumor microenvironment are an independent predictor of recurrence, but do not improve the performance of a predictive model in oral squamous cell carcinoma
7. Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices
8. Economic Evaluation of Two-Step Metallization Processes for Silicon Solar Cells
9. Lesional HPV types of cutaneous warts can be reliably identified by surface swabs
10. Monopolar and bipolar brain mapping during awake and asleep surgery beyond standard IONM settings
11. Intraoperative neuromonitoring and cortical/subcortical brain mapping in patients with eloquent cerebral lesions of several localizations
12. Impact of primary or recurrent planned awake brain surgery on psychooncological status in neurooncological patients
13. Integrated wavelength monitoring in a photonic-crystal tunable laser diode
14. Fine-tuning of GaAs photonic crystal cavities by digital etching
15. Investigation of strong coupling between single quantum dot excitons and single photons in pillar microcavities
16. Semiconductor photonic crystals for optoelectronics
17. DFB laser diodes in the wavelength range from 760 nm to 2.5 μm
18. Photonic crystal waveguide directional couplers as wavelength selective optical filters
19. Mode anti-crossing and carrier transport effects in tunable photonic crystal coupled-cavity lasers
20. PE60 - Exploring ergonomic complaints during surgery using the Da Vinci Xi
21. PE51 - En-bloc robot-assisted radical cystectomy and urethrectomy: Feasibility and assessment of risk factors for delayed urethrectomy
22. GaInNAs for GaAs based lasers for the 1.3 to 1.5 μm range
23. MOVPE growth of GaN on Si(1 1 1) substrates
24. Deeply etched two-dimensional photonic crystals fabricated on GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching
25. GaAs field effect transistors fabricated by imprint lithography
26. Lateral coupling – a material independent way to complex coupled DFB lasers
27. Fabrication of quantum point contacts and quantum dots by imprint lithography
28. Fabrication of semiconductor lasers with 2D-photonic crystal mirrors using a wet oxidized Al 2O 3-mask
29. GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics
30. Multiple-step annealing for 50% enhanced p-conductivity of GaN
31. Characterization of etched facets for GaN-based lasers
32. Long-period time-dependent luminescence in reactive ion-etched GaN
33. MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
34. Silicon quantum point contact with aluminum gate
35. Fabrication of nanostructures in GaN
36. Photon confinement effects — from physics to applications
37. High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers
38. Epitaxy of ternary nitrides on GaN single crystals
39. Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes
40. B26 Relationship of Sox2 and Rb in Tumor Initiation and Maintenance in Small-Cell Lung Cancer
41. PO-095 Objective intra-operative assessment of resection margins in Head and Neck cancer surgery
42. La chirurgie des méningiomes intracrâniens guidée par fluoresence à l’acide 5-amino-laevulinique (5-ALA) – Série clinique
43. Role of molecular beam epitaxy in the field of optoelectronics
44. Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates
45. Ion channeling studies of GaN layers on c-oriented sapphire
46. The permeable junction base transistor with a new gate of extremely high doped p ++ - GaAs
47. Arsenic passivation of MOMBE grown GaAs surfaces
48. The selectively grown permeable junction base transistor with a gate of highly carbon doped GaAs
49. MOMBE of InAs on GaAs
50. Carbon incorporation in MOMBE-grown Ga 0.47In 0.53As
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