17 results on '"Myronov, M."'
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2. Electrical properties and strain distribution of Ge suspended structures
3. Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry
4. Ultra high hole mobilities in a pure strained Ge quantum well
5. Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
6. Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates
7. Control of epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD
8. Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)
9. High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate
10. Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity
11. Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature
12. Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well
13. Very thin, high Ge content Si 0.3Ge 0.7 relaxed buffer grown by MBE on SOI(0 0 1) substrate
14. Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to [formula omitted]
15. Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE
16. Application of high-resolution X-ray diffraction to study strain status in Si 1− xGe x/Si 1− yGe y/Si (001) heterostructures
17. Comparison of electron–phonon and hole–phonon energy loss rates in silicon
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