62 results on '"Razeghi, M."'
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2. High peak power 16 μm InP-related quantum cascade laser
3. Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs
4. Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
5. A review of III-nitride research at the Center for Quantum Devices
6. Materials characterization of n - ZnO / p - GaN : Mg / c - Al 2O 3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition
7. High performance quantum cascade lasers at λ∼6 μm
8. Development of quantum well infrared photodetectors at the Center for Quantum Devices
9. Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
10. High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm
11. High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
12. Novel Sb-based materials for uncooled infrared photodetector applications
13. Kinetics of quantum states in quantum cascade lasers: device design principles and fabrication
14. Chapter 1 - Introduction
15. The comparison of patellofemoral joint forces between flat footed and normal subjects during stance phase of gait
16. The effects of ankle taping on the kinematics findings of the ankle and knee joints during walking on level ground
17. A comparative evaluation of the effect of three different in-shoe orthotic appliances on the force applied to the knee extensor mechanism in flat footed subjects during stance phase of gait
18. Chapter 4 - GalnAs(P) based QWIPs on GaAs, InP, and Si substrates for focal plane arrays
19. Chapter 6 - GaSb/lnAs supperlattices for infrared FPAs
20. Chapter 1 - Introduction
21. Chapter 3 - Recent advances in quantum dot optoelectronic devices and future trends
22. Preface
23. Preface
24. MOCVD growth of high quality GaNAlGaN based structures on Al 2O 3 substrates with dislocation density less than 10 7cm − 2
25. High power aluminium-free InGaAsP/GaAs pumping diode lasers
26. In situ characterization by reflectance difference spectroscopy of III–V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition
27. Observation of a spin-polarization instability in tilted magnetic fields
28. Modeling of hydrogen diffusion in p-type GaAs:Zn
29. Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells
30. Spectroscopic investigation of electron-hole plasma properties in InGaAs/InP quantum well structures
31. Well width dependence of the carrier life time in InGaAs/InP quantum wells
32. Magnetotransport measurements in [formula omitted] heterostructures
33. Pressure dependence study of the effective mass in Ga 0.47In 0.53As/InP heterojunctions
34. Interface roughness scattering in thin quantum wells
35. Two dimensional magnetophonon resonance in GaInAsInP superlattices
36. Recent advances in III–V compounds on silicon
37. Optical assessment of reactive ion etched ZnTe and ZnSe for nanostructures
38. Frequency shifted polaron coupling in GaInAs heterostructures
39. Measurements of thermoelectric power in two-dimensional systems
40. An experimental test of two-parameter scaling of integral quantum Hall effect
41. One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires
42. Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices
43. Cyclotron resonance and polaron effects in a two-dimensional electron gas in GaInAs
44. Quantum hall effect and hopping conduction in In xGa 1−xAs-InP heterojunctions at low temperature
45. Properties of 2D quantum well lasers
46. Morphology of twinned GaN grown on (11·0) sapphire substrates
47. Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field
48. 1.2–1.6 μm Ga xIn 1− xAs yP 1− y-InP DH lasers grown by LPMOCVD
49. GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications
50. Recent advances in MOCVD growth of In xGa 1- xAs yP 1- y alloys
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