21 results on '"Yugova, T. G."'
Search Results
2. Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method
3. Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method
4. Polycrystallinity in Gallium Arsenide Crystals Grown by the Czochralski Method
5. Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method
6. Magnetoplastic Effect in Te-Doped GaAs Single Crystals
7. Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method
8. Raman spectroscopy study of the structure of gallium nitride epitaxial layers of different orientations
9. Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
10. Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers
11. Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer
12. Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy
13. Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy
14. Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride
15. Thermally stimulated relaxation of misfit strains in Si1−x Gex/Si(100) heterostructures with different buffer layers
16. Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates
17. Defect formation in Ge1−x Six/Ge(111) epitaxial heterostructures
18. Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions
19. Effect of the composition of the solid solution on the high-temperature microhardness of SiGe heteroepitaxial layers grown on Ge and Si substrates
20. X-ray diffraction determination of the composition of In x Ga1 − x Sb solid solution
21. Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium-and dysprosium-implanted silicon
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.