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The Internet of Things (IoT) is expanding its application domains and deployments due to its rapid development. Within such architectures, ensuring reliability and fault tolerance becomes a critical consideration. In this work, we propose a model-based design approach where formal models are used to analyze failure-related behaviors. One goal is to make this analysis early in the development cycle, prior to actual implementation, aiming to reduce the cost associated with discovering and rectifying failures later in IoT architectures. A further goal is to explore different designs and strategies without needing costly development, coding, and testing. This work follows these ideas by presenting a formal model of IoT architectures encompassing failure-related aspects and allowing designers to perform reliability analysis using statistical model-checking (SMC) and run-time simulations.

Resource arbitration is a fundamental problem in communication and computing system design. Thus, a fast and efficient arbitration algorithm is one of the most dominant factors for high performance networks-on-chip (NoCs) and ensuring their reliability and performance is highly required. In this context, we propose, a formal model for the analysis and validation of the round-robin protocol, considered as the most widely adopted scheduling algorithm, in particular for real-time applications. The contribution of this paper is first to propose a high-level formal, distributed and scalable model for round-robin arbiter based on the formalism of timed automata. We then employ model checking, to verify a set of relevant properties of the round-robin protocol such as deadlock freedom and invariant. In order to evaluate the efficiency and the scalability of the protocol under study, a set of experimental results are presented based on an automatically generated code of our proposed model.

The photothermal method has been used for the determination of several thermal and optical material properties. We demonstrate the use of the photothermal method for the investigation of thermal and optical properties of the GaAlAsSb and GaInAsSb layers which are, respectively, the confinement layer and the active layer of the GaAlAsSb/GaInAsSb/GaAlAsSb/GaSb laser heterostructure. These layers were deposited on a GaSb substrate in its liquid phase by means of epitaxy.