Search

Carbon nitride films have been deposited on Si(100) substrates by r.f. plasma‐enhanced chemical vapour deposition (r.f.‐PECVD) using an ethylene–ammonia–hydrogen (C2H4–NH3–H2) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp3fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x‐ray diffraction (XRD), x‐ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The DRIFT data revealed that, after RTA, N–H, N–C–H, C–H, CN, C–O and CN bonds were reduced but C–N, diamond C–C and N–C=O bonds were formed. The XRD data show growth of crystalline carbon nitride as well as amorphous SiC. The XPS data indicate that the sp3fraction on the film surface is maximum at 100 sccm hydrogen flow rate. The AFM data show carbon nitride growth in clusters of sizes 60–70 nm. The DRIFT and XPS data were correlated. Copyright © 1999 John Wiley & Sons, Ltd.

Carbon nitride films have been deposited on Si(100) substrates by r.f. plasma-enhanced chemical vapour deposition (r.f.-PECVD) using an ethylene–ammonia–hydrogen (C2H4–NH3–H2) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp³ fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The DRIFT data revealed that, after RTA, N–H, N–C–H, C–H, C&tbond;N, C–O and C&dbond;N bonds were reduced but C–N, diamond C–C and N–C=O bonds were formed. The XRD data show growth of crystalline carbon nitride as well as amorphous SiC. The XPS data indicate that the sp³ fraction on the film surface is maximum at 100 sccm hydrogen flow rate. The AFM data show carbon nitride growth in clusters of sizes 60–70 nm. The DRIFT and XPS data were correlated. Copyright © 1999 John Wiley & Sons, Ltd.