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Graphical abstract: Triplet excitons of pentacene molecules doped into a picene single crystal provide microwave emission and absorptive resonance modes as well as large optically detected magnetic resonance contrast which can be tuned by magnetic field strength and direction. These properties make pentacene-doped picene single crystals promising materials for spin-driven opto-electronics and, in particular, in microwave amplification by stimulated emission of radiation (MASER).

The formation of wurtzite (WZ) phase in III–V nanowires (NWs) such as GaAs and InP is a complication hindering the growth of pure-phase NWs, but it can also be exploited to form NW homostructures consisting of alternate zincblende (ZB) and WZ segments. This leads to different forms of nanostructures, such as crystal-phase superlattices and quantum dots. Here, we investigate the electronic properties of the simplest, yet challenging, of such homostructures: InP NWs with a single homojunction between pure ZB and WZ segments. Polarization-resolved microphotoluminescence (μ-PL) measurements on single NWs provide a tool to gain insights into the interplay between NW geometry and crystal phase. We also exploit this homostructure to simultaneously measure effective masses of charge carriers and excitons in ZB and WZ InP NWs, reliably. Magneto-μ-PL measurements carried out on individual NWs up to 29 T at 77 K allow us to determine the free exciton reduced masses of the ZB and WZ crystal phases, showing the heavier character of the WZ phase, and to deduce the effective mass of electrons in ZB InP NWs (me= 0.080 m0). Finally, we obtain the reduced mass of light-hole excitons in WZ InP by probing the second optically permitted transition Γ7C↔ Γ7uVwith magneto-μ-PL measurements carried out at room temperature. This information is used to extract the experimental light-hole effective mass in WZ InP, which is found to be mlh= 0.26 m0, a value much smaller than the one of the heavy hole mass. Besides being a valuable test for band structure calculations, the knowledge of carrier masses in WZ and ZB InP is important in view of the optimization of the efficiency of solar cells, which is one of the main applications of InP NWs.

Room-temperature manipulation and processing of information encoded in the electronic valley pseudospin and spin degrees of freedoms lie at the heart of the next technological quantum revolution. In atomically thin layers of transition-metal dichalcogenides (TMDs) with hexagonal lattices, valley-polarized excitations and valley quantum coherence can be generated by simply shining with adequately polarized light. In turn, the polarization states of light can induce topological Hall currents in the absence of an external magnetic field, which underlies the fundamental principle of opto-valleytronics devices. However, demonstration of optical generation of valley polarization at room temperature has remained challenging and not well understood. Here, we demonstrate control of strong valley polarization (valley quantum coherence) at room temperatureof up to ∼50% (∼20%) by strategically designing Coulomb forces and spin–orbit interactions in atomically thin TMDs viachalcogenide alloying. We show that tailor making the carrier density and the relative order between optically active (bright) and forbidden (dark) states by key variations on the chalcogenide atom ratio allows full control of valley pseudospin dynamics. Our findings set a comprehensive approach for intrinsic and efficient manipulation of valley pseudospin and spin degree of freedom toward realistic opto-valleytronics devices.

The fast-growing field of atomically thin semiconductors urges a new understanding of two-dimensional excitons, which entirely determine their optical responses. Here, taking layered lead halide perovskites as an example of unconventional two-dimensional semiconductors, by means of versatile optical spectroscopy measurements, we resolve fine-structure splitting of bright excitons of up to ∼2 meV, which is among the largest values in two-dimensional semiconducting systems. The large fine-structure splitting is attributed to the strong electron–hole exchange interaction in layered perovskites, which is proven by the optical emission in high magnetic fields of up to 30 T. Furthermore, we determine the g-factors for these bright excitons as ∼+1.8. Our findings suggest layered lead halide perovskites are an ideal platform for studying exciton spin-physics in atomically thin semiconductors that will pave the way toward exciton manipulation for novel device applications.

Atomically thin layers of transition-metal dichalcogenides semiconductors, such as MoS2, exhibit strong and circularly polarized light emission due to inherent crystal symmetries, pronounced spin–orbit coupling, and out-of-plane dielectric and spatial confinement. While the layer-by-layer confinement is well-understood, the understanding of the impact of in-plane quantization in their optical spectrum is far behind. Here, we report the optical properties of atomically thin MoS2colloidal semiconductor nanocrystals. In addition to the spatial-confinement effect leading to their blue wavelength emission, the high quality of our MoS2nanocrystals is revealed by narrow photoluminescence, which allows us to resolve multiple optically active transitions, originating from quantum-confined excitons (coupled electron–hole pairs). Surprisingly, in stark contrast to monolayer MoS2, the luminescence of the lowest-energy levels is linearly polarized and persists up to room temperature, meaning that it could be exploited in a variety of light-emitting applications.

Wave function engineering has become a powerful tool to tailor the optical properties of semiconductor colloidal nanocrystals. Core–shell systems allow to design the spatial extent of the electron (e) and hole (h) wave functions in the conduction- and valence bands, respectively. However, tuning the overlap between the e- and h-wave functions not only affects the oscillator strength of the coupled e–h pairs (excitons) that are responsible for the light emission, but also modifies the e–h exchange interaction, leading to an altered excitonic energy spectrum. Here, we present exciton lifetime measurements in a strong magnetic field to determine the strength of the e–h exchange interaction, independently of the e–h overlap that is deduced from lifetime measurements at room temperature. We use a set of CdTe/CdSe core/shell heteronanocrystals in which the electron–hole separation is systematically varied. We are able to unravel the separate effects of e–h overlap and e–h exchange on the exciton lifetimes, and we present a simple model that fully describes the recombination lifetimes of heteronanostructures (HNCs) as a function of core volume, shell volume, temperature, and magnetic fields.

Light emission of semiconductor nanocrystals is a complex process, depending on many factors, among which are the quantum mechanical size confinement of excitons (coupled electron–hole pairs) and the influence of confined phonon modes and the nanocrystal surface. Despite years of research, the nature of nanocrystal emission at low temperatures is still under debate. Here we unravel the different optical recombination pathways of CdSe/CdS dot-in-rod systems that show an unprecedented number of narrow emission lines upon resonant laser excitation. By using self-assembled, vertically aligned rods and application of crystallographically oriented high magnetic fields, the origin of all these peaks is established. We observe a clear signature of an acoustic-phonon assisted transition, separated from the zero-phonon emission and optical-phonon replica, proving that nanocrystal light emission results from an intricate interplay between bright (optically allowed) and dark (optically forbidden) exciton states, coupled to both acoustic and optical phonon modes.