1. Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films.
- Author
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Jinesh, K. B., van Hemmen, J. L., van de Sanden, M. C. M., Roozeboom, F., Klootwijk, J. H., Besling, W. F. A., and Kessels, W. M. M.
- Subjects
ALUMINUM oxide ,DIELECTRICS ,SILICON ,ALUMINUM electrodes ,ALUMINUM films - Abstract
A comparative electrical characterization study of aluminum oxide (Al
2 O3 ) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2 O3 deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity (k = 8.8), than the thermal ALD Al2 O3 . Remarkably, the plasma-assisted ALD Al2 O3 films exhibit niore negative fixed oxide charge density than the thermal ALD Al2 O3 layers. In addition, it is shown that plasma-assisted ALD Al2 O1 exhibits negligible trap-assisted (Poole-Frenkel) conduction unlike the thermal ALD Al2 O3 films, resulting in higher breakdown electric-fields than the thermal ALD prepared films. [ABSTRACT FROM AUTHOR]- Published
- 2011
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