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We measure the relative chemical shift between Si 1s and Si 2p, $\Delta $E$_{\rm 1s}- \Delta $E2p, for 0.20–1.96-nm-thick SiO2films formed on Si substrates using high-resolution high-energys x-ray radiation. It is found that $\Delta $E$_{\rm 1s} - \Delta $E2pis independent of SiO2film thickness for films thicker than 1.0 nm, whereas it is smaller for films thinner than 0.5 nm. The result, in conjunction with first principles molecular orbital calculations, indicates that the valence charge of the Si atom is larger for in ultrathin SiO2films than in the thicker SiO2films.

Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2O3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd2O3/Si(100) interface without annealing and the amount of Gd-silicate increased by PDA above 400°C.

Thermal stability of Gd2O3/Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd2O3/Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300?C. The analyses of O 1s and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd2O3/Si(100) interface without annealing and the amount of Gd-silicate increased by PDA above 400?C.

We measure the relative chemical shift between Si 1s and Si 2p, ?E31- ?E02, for 0.20?1.96-nm-thick SiO2 films formed on Si substrates using high-resolution high-energys x-ray radiation. It is found that ?E31 - ?E02 is independent of SiO2 film thickness for films thicker than 1.0?nm, whereas it is smaller for films thinner than 0.5?nm. The result, in conjunction with first principles molecular orbital calculations, indicates that the valence charge of the Si atom is larger for in ultrathin SiO2 films than in the thicker SiO2 films.