Search

We report the specific capacitance, Cs, of variously ordered RuO2(110) surfaces measured in a 1 M H2SO4electrolyte with unprecedented precision. Employing ∼10 nm thick, atomically flat epitaxial RuO2films along with a geometric surface area-controlled electrochemical cell, we determine an upper limit of Cs= (35.35 ± 0.53) μFcm–2of the idealized, i.e., well-ordered and stoichiometric RuO2(110) surface by electrochemical impedance spectroscopy (EIS) and scan-rate-dependent cyclic voltammetry. We demonstrate, however, that a slight decrease in surface quality immediately translates into pronounced cyclo-voltammetric differences and a significant increase of Cs. This needs to be considered when determining electrochemically active surface areas (ECSAs) of geometrically ill-defined RuO2catalysts─a benchmark to measure electrochemical performance─from their measured double-layer capacitance.

Indenene─the triangular single layer phase of indium─is a novel large gap (∼120 meV) quantum spin Hall (QSH) insulator that stabilizes on SiC(0001) substrates. Thanks to excellent lattice matching, indenene nucleates in monodomains that are promising for devices if synthesized in the micrometer range. Here, we establish a simple, but robust and scalable indenene fabrication protocol based on an initial Stranski–Krastanov growth stage followed by a short anneal whose temperature selects between a three, two, or one monolayer In coverage. Their specific structural and electronic properties produce distinct fingerprints in experimental surface characterization by electron microscopy, diffraction, and spectroscopy, thus providing an efficient metric for the synthesis of large scale high-quality indenene on SiC.

In the field of topological materials, the interaction between band topology and magnetism remains a current frontier for the advancement of new topological states and spintronic functionalities. Doping with rare-earth elements with large magnetic moments is a current approach to exploit the phenomenology of such interaction. However, dopant solubility into the main matrix plays a major role. In this sense, the present work is focused on elucidating how Eu incorporates into Bi2Te3lattice as a function of doping. This work reports a systematic investigation of the structural and electronic properties of bismuth telluride epitaxial layers doped with Eu. Bi2Te3films were grown by molecular beam epitaxy on (111) BaF2substrates with nominal Eu doping ranging from 0% up to 9%. X-ray diffraction analysis and scanning transmission electron microscopy reveal that Eu atoms enter substitutionally on Bi sites up to 4% of Eu doping. In contrast, the 9% Eu-doped sample contains epitaxially oriented nanoclusters of EuTe. X-ray photoelectron and absorption spectroscopies show that Eu atoms enter the Bi2Te3crystal matrix in the divalent Eu2+state for all Eu concentrations. Angle-resolved photoemission experiments indicate that the topological surface state is preserved in the presence of the local magnetic moments introduced by the Eu impurities.

When an electron–hole pair is optically excited in a semiconductor quantum dot, the host crystal lattice adapts to the presence of the generated charge distribution. Therefore, the coupled exciton–phonon system has to establish a new equilibrium, which is reached in the form of a quasiparticle called a polaron. Especially, when the exciton is abruptly generated on a timescale faster than the typical lattice dynamics, the lattice cannot follow adiabatically. Consequently, rich dynamics on the picosecond timescale of the coupled system is expected. In this study, we combine simulations and measurements of the ultrafast, coherent, nonlinear optical response, obtained by four-wave mixing (FWM) spectroscopy, to resolve the formation of this polaron. By detecting and investigating the phonon sidebands in the FWM spectra for varying pulse delays and different temperatures, we have access to the influence of phonon emission and absorption processes, which finally result in the emission of an acoustic wave packet.

While the advanced coherent control of qubits is now routinely carried out in low-frequency (gigahertz) systems like single spins, it is far more challenging to achieve for two-level systems in the optical domain. This is because the latter evolve typically in the terahertz range, calling for tools of ultrafast, coherent, nonlinear optics. Using four-wave mixing microspectroscopy, we here measure the optically driven dynamics of a single exciton quantum state confined in a semiconductor quantum dot. In a combined experimental and theoretical approach, we reveal the intrinsic Rabi oscillation dynamics by monitoring both central exciton quantities, i.e., its occupation and the microscopic coherence, as resolved by the four-wave mixing technique. In the frequency domain, this oscillation generates the Autler–Townes splitting of the light-exciton dressed states, directly seen in the four-wave mixing spectra. We further demonstrate that the coupling to acoustic phonons strongly influences the four-wave mixing dynamics on the picosecond time scale, because it leads to transitions between the dressed states.

Boson sampling is considered as a strong candidate to demonstrate ‘quantum computational supremacy’ over classical computers. However, previous proof-of-principle experiments suffered from small photon number and low sampling rates owing to the inefficiencies of the single-photon sources and multiport optical interferometers. Here, we develop two central components for high-performance boson sampling: robust multiphoton interferometers with 99% transmission rate and actively demultiplexed single-photon sources based on a quantum dot–micropillar with simultaneously high efficiency, purity and indistinguishability. We implement and validate three-, four- and five-photon boson sampling, and achieve sampling rates of 4.96 kHz, 151 Hz and 4 Hz, respectively, which are over 24,000 times faster than previous experiments. Our architecture can be scaled up for a larger number of photons and with higher sampling rates to compete with classical computers, and might provide experimental evidence against the extended Church–Turing thesis.

Implementing time-delayed feedback in optoelectronic circuits allows one to uncover the rich physics and application potential of nonlinear dynamics. Important feedback effects are, for instance, the generation of broadband chaos, or laser self-pulsing. We explore the effect of optoelectronic feedback in an ultracompact microlaser–microdetector assembly operating in the regime of cavity quantum electrodynamics (cQED). This system is used to generate self-pulsing at MHz frequencies in the emission of a microlaser, which is qualitatively explained by a rate equation model taking cQED effects into account. The results show promise for exploring chaos in ultracompact nanophotonic systems and for technological approaches toward chaos-based secure communication, random number generation, and self-pulsed single photon sources on a highly integrated semiconductor platform.

Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior. Sb is predicted to show thickness-dependent topological properties, providing potential applications for low-energy-consuming electronic devices. Here we successfully synthesize ultrathin Sb films on semi-insulating InSb(111)A. Despite the covalent nature of the substrate, which has dangling bonds on the surface, we prove by scanning transmission electron microscopy that the first layer of Sb atoms grows in an unstrained manner. Rather than compensating for the lattice mismatch of −6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy. Our model calculations assign the moiré pattern to a periodic surface corrugation. In agreement with theoretical predictions, irrespective of the moiré modulation, the topological surface state known on a thick Sb film is experimentally confirmed to persist down to small film thicknesses, and the Dirac point shifts toward lower binding energies with a decrease in Sb thickness.

Resonant excitation of solid state quantum emitters has the potential to deterministically excite a localized exciton while ensuring maximally coherent emission. In this work, we demonstrate the coherent coupling of an exciton localized in a lithographically positioned, site-controlled semiconductor quantum dot to an external resonant laser field. For strong continuous-wave driving we observe the characteristic Mollow triplet and analyze the Rabi splitting and sideband widths as a function of driving strength and temperature. The sideband widths increase linearly with temperature and the square of the driving strength, which we explain via coupling of the exciton to longitudinal acoustic phonons. We also find an increase of the Rabi splitting with temperature, which indicates a temperature-induced delocalization of the excitonic wave function resulting in an increase of the oscillator strength. Finally, we demonstrate coherent control of the exciton excited state population via pulsed resonant excitation and observe a damping of the Rabi oscillations with increasing pulse area, which is consistent with our exciton–photon coupling model. We believe that our work outlines the possibility to implement fully scalable platforms of solid state quantum emitters. Such scalability is one of the key prerequisites for more advanced, integrated nanophotonic quantum circuits.

Sensor miniaturization together with broadening temperature sensing range are fundamental challenges in nanothermometry. By exploiting a large temperature-dependent screening effect observed in a resonant tunneling diode in sequence with a GaInNAs/GaAs quantum well, we present a low dimensional, wide range, and high sensitive nanothermometer. This sensor shows a large threshold voltage shift of the bistable switching of more than 4.5 V for a temperature raise from 4.5 to 295 K, with a linear voltage–temperature response of 19.2 mV K–1, and a temperature uncertainty in the millikelvin (mK) range. Also, when we monitor the electroluminescence emission spectrum, an optical read-out control of the thermometer is provided. The combination of electrical and optical read-outs together with the sensor architecture excel the device as a thermometer with the capability of noninvasive temperature sensing, high local resolution, and sensitivity.

The heterogeneous integration of III–V optoelectronic devices with Si electronic circuits is highly desirable because it will enable many otherwise unattainable capabilities. However, direct growth of III–V thin film on silicon substrates has been very challenging because of large mismatches in lattice constants and thermal coefficients. Furthermore, the high epitaxial growth temperature is detrimental to transistor performance. Here, we present a detailed studies on a novel growth mode which yields a catalyst-free (Al,In)GaAs nanopillar laser on a silicon substrate by metal–organic chemical vapor deposition at the low temperature of 400 °C. We study the growth and misfit stress relaxation mechanism by cutting through the center of the InGaAs/GaAs nanopillars using focused ion beam and inspecting with high-resolution transmission electron microscopy. The bulk material of the nanopillar is in pure wurtzite crystal phase, despite the 6% lattice mismatch with the substrate, with all stacking disorders well confined in the bottom-most transition region and terminated horizontally. Furthermore, InGaAs was found to be in direct contact with silicon, in agreement with the observed crystal orientation alignment and good electrical conduction across the interface. This is in sharp contrast to many III–V nanowires on silicon which are observed to stem from thin SiNx, SiO2, or SiO2/Si openings. In addition, GaAs was found to grow perfectly as a shell layer on In0.2Ga0.8As with an extraordinary thickness, which is 15 times greater than the theoretical thin-film critical thickness for a 1.5% lattice mismatch. This is attributed to the core–shell radial geometry allowing the outer layers to expand and release the strain due to lattice mismatch. The findings in this study redefine the rules for lattice-mismatched growth on heterogeneous substrates and device structure design.

In this article, we describe epitaxial growth and investigations of optical properties of In(Ga)As/GaAs site‐controlled quantum dots (QDs) fabricated on (001)‐oriented GaAs substrates. The QD nucleation is directed by pre‐patterning planar GaAs surfaces with shallow nanoholes. The focus of this work lies on the realization of arrays of site‐controlled QDs (SCQDs) with a tailored morphology and optical properties comparable to QDs fabricated on planar substrates. By maximizing the migration length during QD deposition, we were able to increase the QD pitches to values exceeding device dimensions of typical semiconductor microresonators. The introduction of a seeding layer in our growth scheme allows us to extend the vertical distance between the QDs and the etched nucleation centres to about 20 nm without suffering from nanoholes being occupied by multiple QDs. Furthermore, the extended distance between the QD layer and the re‐growth interface allows us to preserve excellent optical properties of the single QDs as probed in photoluminescence with an average single QD related linewidth of 133 µeV and minimum values as low as 25 µeV for non‐resonant excitation. The high yield of optically active QDs on the pre‐defined nucleation positions is studied by cathodoluminescence (CL) with high spatial resolution. We find emission from single SCQDs on more than 90% of the nucleation centres, which is a pre‐requisite for any scalable QD‐device fabrication scheme.

Studying cavity quantum electrodynamical effects is an emerging and important field of research for the understanding of the many body quantum theory as well as for the generation of a new type of efficient lasers. Here we report a dramatic change in the photon statistics of quantum dot based micropillar lasers where a finite fraction of the emission is reflected back into the microcavity after a roundtrip time in an external cavity, where greatly exceeds the coherence time. Photon bunching was observed above the threshold current where the second order autocorrelation function g(2)() at zero-lag can reach values up to 3.51±0.06. The change in the photon statistics of the two non-degenerated fundamental modes were found to be correlated, indicating non-trivial interactions between both cavity modes. Furthermore the optical feedback led to revivals of the bunching signal in integer multiples of the round trip time of the external cavity and to a decrease in the coherence time of the laser. These phenomena compare well with milliwatt chaotic lasers induced by an external feedback, indicating that chaos might occur in the nanowatt lasing regime where fluctuations in the photon statistics are in the leading order.

Electron spins in quantum dots under coherent control exhibit a number of novel feedback processes. Here, we present experimental and theoretical evidence of a feedback process between nuclear spins and a single electron spin in a single charged InAs quantum dot, controlled by the coherently modified probability of exciting a trion state. We present a mathematical model describing competition between optical nuclear pumping and nuclear spin-diffusion inside the quantum dot. The model correctly postdicts the observation of a hysteretic sawtooth pattern in the free-induction-decay of the single electron spin, hysteresis while scanning a narrow-band laser through the quantum dot's optical resonance frequency, and non-sinusoidal fringes in the spin echo. Both the coherent electron-spin rotations, implemented with off-resonant ultrafast laser pulses, and the resonant narrowband optical pumping for spin initialization interspersed between ultrafast pulses, play a role in the observed behavior. This effect allows dynamic tuning of the electron Larmor frequency to a value determined by the pulse timing, potentially allowing more complex coherent control operations.

We investigate the coupling of two single point-defect microcavities formed in a two-dimensional photonic-crystal slab. The mode structure is probed using photoluminescence spectroscopy of self-assembled InGaAs quantum dots embedded in GaAs/AlGaAs membrane-based, photonic-crystal microcavities. As a baseline, we start from single defect cavities: We observe defect states originating from both the ground and the first-excited slab waveguide mode, depending on the photonic-crystal lattice period. This is explained using three-dimensional, plane-wave-expansion calculations. In the case of coupling between two such single defects, a splitting of the mode energies into binding and antibinding states controlled by the coupling strength is observed. These photonic-defect–molecule states are identified by a comparison of their expected far-field distributions with polarization-dependent measurements.

Our goal was to assess the value of CT and MRI for the detection of bowel wall changes in experimentally induced mesenteric ischemia.

We demonstrate a deterministic Purcell-enhanced single photon source realized by integrating an atomically thin WSe2layer with a circular Bragg grating cavity. The cavity significantly enhances the photoluminescence from the atomically thin layer and supports single photon generation with g(2)(0) < 0.25. We observe a consistent increase of the spontaneous emission rate for WSe2emitters located in the center of the Bragg grating cavity. These WSe2emitters are self-aligned and deterministically coupled to such a broadband cavity, configuring a new generation of deterministic single photon sources, characterized by their simple and low-cost production and intrinsic scalability.

We present a scalable method for the fabrication of site-controlled quantum dots (QDs) embedded in optical resonators. The position of the quantum dots is determined by nucleating their growth in an array of nanoholes that is aligned to a set of markers, allowing the precise overlay of the resonator geometry over the QD array. Coupling of the QDs to the resonators is demonstrated by the resonant enhancement of the spontaneous emission observed in photoluminescence experiments.

Membrane-based photonic crystal GaAs cavities with a double-heterostructure design were investigated. They show the highest quality factors for GaAs photonic crystal cavities to date, exhibiting quality factors higher than 10^5. The resonances of these cavities were fine-tuned in steps smaller than 2 nm by digital etching.

We have studied the coupling of a classic ridge waveguide with a two-dimensional photonic crystal (PC) waveguide, using finite-difference time-domain calculations. The ridge waveguide exhibits only a weak refractive-index confinement of light, as it is commonly used in buried-heterostructure or ridge-waveguide lasers. The light is coupled to a PC waveguide that consists of one missing row along the ΓK direction in a triangular lattice of air cylinders in AlGaAs. We compare various designs for PC tapers with that of a classic taper and for butt coupling. The calculation yields high coupling efficiency that exceeds 80% for a 2.5‐μm-long PC taper. In addition, the dependence of the efficiency on the PC air-fill factor and on alignment tolerances is analyzed.

Two designs of active region for an interband cascade laser, based on double or triple GaInSb/InAs type II quantum wells (QWs), were compared with respect to passive mode-locked operation in the mid-infrared range around 4 um. The layer structure and electron and hole wavefunctions under external electric field were engineered to allow controlling the optical transition oscillator strength and the resulting lifetimes. As a result, the investigated structures can mimic absorber-like and gain-like sections of a mode-locked device when properly polarized with opposite bias. A significantly larger oscillator strength tuning range for triple QWs was experimentally verified by Fourier-transform photoreflectance.