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1. Preparation of CuGaSe2Heteroepitaxial Layers by Metalorganic Molecular Beam Epitaxy

Author

Shirakata, Sho, Kazuo Morita, Kazuo Morita, and Shigehiro Isomura, Shigehiro Isomura

Abstract

The growth of CuGaSe2films on a GaAs(100) substrate using cyclopentadienylcoppertriethylphosphine (CpCuTEP) as a Cu source in metalorganic molecular beam epitaxy (MOMBE) has been studied. Epitaxial CuGaSe2films have been grown at 500°C with the c-axis normal to the substrate plane. Films were characterized by scanning electron microscopy, X-ray diffraction, photoluminescence and photoreflectance techniques.

Published
1994
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