Author: "Okano N" / Database: Supplemental Index - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "Okano N" Database Supplemental Index

Author: Sakurai, A., Hara, S., Okano, N., Kondo, Y., Inoue, J.-i., and Imura, N.
Published: 1999
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Author: Kitamura, H., Nagashima, F., Miyajima, K., Takasu, A., Kasuga, A., Naruge, D., Okano, N., Furuse, J., Sudo, N., Ando, M., Akechi, T., and Okuyama, T.
Published: 2013
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Author: Inada, T., Sugiyama, T., Okano, N., and Ishikawa, Y.
Abstract: Electrical properties of phosphorus-implanted silicon annealed by a single shot of a high-power pulsed electron beam have been studied by differential Hall-effect and sheet-resistivity measurements. Nearly 100% electrical activation of implanted phosphorus can be obtained after electron-beam annealing at an incident energy density of 0.92 J/cm2. Uniformly distributed carrier concentration profiles have been formed by electron-beam annealing.
Published: 1980

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