1. Size effect of amorphous layers on radiation resistance in Cu/Nb multilayers.
- Author
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Yan, Zhe, Yang, Wenfan, Pang, Jingyu, Yao, Jiahao, Zhang, Jian, Yang, Lixin, Zheng, Shijian, Wang, Jian, and Ma, Xiuliang
- Subjects
COPPER ,MULTILAYERS ,RADIATION ,INTERFACE structures ,THERMAL stability ,MULTILAYERED thin films - Abstract
• The multilayers with ultra-thin amorphous layers exhibit the best radiation resistance. • The amorphous thickness can affect the interface structure during amorphous crystallization. • The hardness change is attributed to amorphous crystallization, dislocation nucleation-induced softening and radiation defects-induced hardening. Utilizing multilayer engineering to connect crystalline and amorphous can not only improve the mechanical properties but also enhance the radiation resistance of multilayers. However, the non-monotonic dependence of radiation resistance on the amorphous thickness necessitates an in-depth investigation into the size effect of the amorphous layer. Taking the Cu-Nb system as the prototype, we reveal the radiation resistance of Cu/Nb multilayers with varying thicknesses of the CuNb amorphous layer. After irradiation, multilayers with 0, 0.8, and 2 nm amorphous show flat or non-flat interface structures due to distinct crystalline growth processes during amorphous crystallization. Notably, multilayers with 0.8 nm amorphous exhibit the optimal radiation response, because the ultra-thin amorphous layer shows better thermal stability and slower crystallization rate that can annihilate more radiation defects and effectively inhibit defects growth. Furthermore, a quantitative analysis elucidates the reasons for hardness changes, which are attributed to amorphous crystallization, dislocation nucleation-induced softening, and radiation defects-induced hardening. [Display omitted] [ABSTRACT FROM AUTHOR]
- Published
- 2024
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