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Purpose: We aimed to determine the frequency of transient congenital hypothyroidism (TCH) in 17 participating centers in Türkiye, evaluate the etiological distribution in permanent congenital hypothyroidism (PCH) cases, and investigate the role of laboratory and clinical findings in predicting TCH. Methods: This retrospective observational multicenter study included patients from 17 pediatric endocrinology centers identified by “National Newborn Screening Program” (NNSP) who were born in 2015 and followed for 6 years. Demographic, clinical, and laboratory information of the cases were compiled through the database http://cedd.saglik-network.org(CEDD-NET). Results: Of the 239 cases initially treated for CH, 128 (53.6%) were determined as transient in whom a trial of levothyroxine (LT4) withdrawal was performed at a median age of 36 (34–38) months. Among the patients with PCH (n= 111), thyroid dysgenesis was diagnosed in 39.6% (n= 44). The predictive factors for TCH were: LT4 dose at the withdrawal of treatment, and initial newborn blood screening (NBS)-TSH level. Based on the receiver operating characteristic (ROC) curve analysis to predict optimal cut-offs for TCH predictors, LT4 dose < 2.0 µg/kg/day at treatment discontinuation was predictive for TCH and was associated with 94.5% specificity and 55.7% sensitivity, with an area under the curve (AUC) of 0.802. The initial NBS-TSH level value < 45 µIU/mL was predictive for TCH with 93.1% specificity and 45.5% sensitivity, with an AUC of 0.641. In patients with eutopic thyroid gland only LT4 dose < 1.1 µg/kg/day at withdrawal time was predictive for TCH with 84.7% sensitivity and 40.4% specificity, with an AUC of 0.750. Conclusion: According to our national follow-up data, the frequency of TCH was 53.6%. We determined the LT4 dose < 2.0 µg/kg/day at discontinuation of treatment and the initial NBS-TSH level < 45 µIU/mL as the best cut-off limits to predict TCH.

In this study, annealing effect on the structural, electrical, and optical characteristics of the quaternary Cu-Ag-In-Se (CAIS) thin films was investigated. These samples were deposited by co-evaporation of the Cu, Ag, In2Se3, and Se sources at the substrate temperature of 300 °C. The structural properties of the thin films were analyzed by means of X-ray diffraction, and the results indicated that all of the films were in the polycrystalline structure with the preferred orientation along (112) direction. From the optical measurements, the band gap values were found to vary between 1.38 and 1.45 eV with annealing processes. The temperature-dependent electrical conductivity of the samples was measured in the temperature range of 90–400 K. The films gained degenerate behavior with increasing annealing temperature. The carrier conduction mechanism was determined at high- and low-temperature regions by comparing thermionic emission and hopping parameters. Photoconductivity of the as-grown film showed that there was an increase in conductivity with increasing illumination intensity. From this measurement, the variation of photocurrent as a function of illumination intensity was determined.

Castleman's disease is an idiopathic lymphoproliferative disorder characterized by massive enlargement of lymph nodes. It may have a unifocal or multifocal presentation; the mediastinum is the most common site (70%). Patients with cervical disease usually have unifocal involvement (90%). The main problem posed by cervical Castleman's disease is that it should be considered in the differential diagnosis of cervical tumors. This report describes a patient who had unifocal Castleman's disease on the left side of the neck, and discusses the differential diagnosis with findings on magnetic resonance imaging, computed tomography and ultrasonography.

Abstract: GaSe thin films were deposited by thermal evaporation technique with Cd doping. X-ray diffraction analysis showed that Cd-doped films have polycrystalline structure with the preferred orientation along (008) direction. Temperature dependent electrical conductivity measurements were carried out in the temperature range of 100–400 K along perpendicular and parallel directions to the growth direction for the films exhibiting p-type conduction determined by hot probe technique. The room temperature conductivity values of the films were found to be as 1.5 × 10−8 and 4.9 × 10−12 (Ω cm)−1 due to the measurements along both perpendicular and parallel directions, respectively. The difference in the conductivity values is the indication of electrical anisotropy in the samples. Carrier conduction in the films was provided by the thermionic emission in the high temperature region (310–400 K) with almost the same activation energies in both directions. Space charge limited current analysis at different temperatures reveals the existence of two discrete sets of trap levels for both perpendicular and parallel directions. Calculated trap levels and trap concentrations are 99 meV, 3.5 × 1012 cm−3 and 418 meV, 2.2 × 105 cm−3 for perpendicular direction, 58 meV, 2.1 × 1018 cm−3 and 486 meV, 1.4 × 1012  cm−3 for parallel direction. The differences in the values of the trap levels and concentrations for both directions confirm the existence of electrical anisotropy in Cd-doped GaSe thin films, because of the structural anisotropy between and inside the crystallites.

Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1 × 109 to 6.5 × 105 Ω-cm. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for as-grown, 36 and 472 meV for as-implanted and 39 and 647 meV for implanted and annealed GaSe single crystals at 500°C. Calculated activation energies from the conductivity measurements indicated that the transport mechanisms are dominated by thermal excitation at different temperature intervals in the implanted and unimplanted samples. By measuring photoconductivity (PC) measurement as a function of temperature and illumination intensity, the relation between photocurrent (IPC) and illumination intensity (Φ) was studied and it was observed that the relation obeys the power law, IPC αΦn with n between 1 and 2, which is indication of behaving as a supralinear character and existing continuous distribution of localized states in the band gap. As a result of transmission measurements, it was observed that there is almost no considerable change in optical band gap of samples with increasing annealing temperatures for as-grown GaSe; however, a slight shift of optical band gap toward higher energies for Ge-implanted sample was observed with increasing annealing temperatures. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

We aimed to depict Broca's area and Wernicke's area by word generation and sentence formation paradigms in patients with various intracranial lesions adjacent to language areas using functional MRI technique and to evaluate the ability of functional MRI to lateralize the hemispheric dominance for language. Twenty-three right-handed patients were included in this study. Lesions were classified as low-grade glioma (n=8), high-grade glioma (n=9), metastasis (n=1), meningioma (n=1), arteriovenous malformation (n?2) and mesial temporal sclerosis (n=2). We performed blood-oxygenated-level-dependant functional MRI using a 1.5-T unit. Word generation and sentence formation tasks were used to activate language areas. Language areas were defined as Brodmann 44, 45 (Broca's area) and Brodmann 22 area (Wernicke's area). Laterality index was used to show the dominant hemisphere. Two poorly cooperative patients showed no activation and were excluded from the study. Broca's area was localized in 21 patients (100 %). Wernicke's area, on the other hand, could only be localized in eight of the 21 patients (38 %). The left hemisphere was dominant in 86% of patients while atypical language lateralization (right or bilateral) was demonstrated in 14% of the patients. Bilateral activation areas were shown in 10% of those patients while right cerebral hemisphere was dominant in 4% of the patients. Word generation and sentence formation tasks are especially helpful in localizing Broca's area. Wernicke's area could also be demonstrated in some of the cases. Functional MRI can be used as an important and useful means of demonstrating language areas in patients with lesions adjacent to those areas and depicting the hemispheric dominance.

Our aim was to demonstrate lateralization morphometrically and volumetrically measuring the main limbic structures like hippocampus, amygdala, fornix and mamillary bodies in patients with temporal lobe epilepsy (TLE) and to establish the contribution of each anatomical structure to lateralizing the pathological site. Forty-two patients with complex partial seizures originating from the temporal lobe and 42 control healthy volunteers were included in the study. T2-weighted FSE sequences in axial and oblique coronal planes and T1-weighted SE sequences in the sagittal plane were used. A high-resolution IR sequence was used for the volumetric analysis of amygdala and hippocampus and for the measurement of fornix and mamillary body thickness. Intensity changes and atrophy of limbic structures were observed qualitatively and measurement of these structures was performed quantitatively. Student's t test and Mann-Whitney U-test were used for the statistical analysis. The p values <0.05 was taken as statistically significant. Ten out of 42 patients had intracranial masses and were excluded from the study. Qualitative analysis revealed atrophy in 84% and intensity increase in 60% of cases. Quantitative measurement demonstrated that control cases had a larger hippocampus than the patients (p<0.001). There was unilateral hippocampal volume loss in 88% and bilateral volume loss in 13% of patients. There was no difference in the volume of amygdala between the groups (p>0.05). According to the difference in the volumes of the right and left sides, there was unilateral atrophy in 34% of patients. Bilateral atrophy was not observed. There was a significant difference in fornix and mamillary bodies of the patients and control subjects (p<0.005). In 62.5% of cases, there were abnormalities in the fornix with bilateral involvement in 13% of cases. Mamillary bodies were abnormal in 37% of patients with bilateral involvement in 15%. Lateralization was accomplished in 65% of the patients according to the percentage difference ratios of fornix and in 38% of the patients according to the mamillary bodies. It is important to demonstrate hippocampus atrophy in patients with TLE. In the decision of lateralization of the epileptic side, evaluation of the fornix could be a good and practical solution. However, hippocampal volumetry is an indispensable criterion in demonstrating hippocampal atrophy more accurately. Atrophy of the amygdala and thickness of mamillary bodies have the least importance for lateralization.

The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increased upon implantation and annealing which confirms a possibility of explanation the phenomenon within a framework of continuous trap levels. Photocurrent measurements as a function of photo-excitation intensity also support continuous distribution of localized states in the band gap. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

OBJECTIVE: To investigate the effect of the rate of metoclopramide infusion on akathisia incidence, severity, onset of symptoms, and duration in patients with headache, and/or nausea/vomiting in the emergency department (ED) setting. METHODS: Prospective, double blind, randomised clinical study comparing two rates of intravenous infusion of metoclopramide over a period of six months at a tertiary university hospital ED. RESULTS: A total of 300 patients presented to the ED met the inclusion criteria: 151 (50.3%) with nausea/vomiting, 108 (36%) with headache, and 41 (13.7%) with headache and nausea/vomiting. Of these, 154 patients (51.3%) were given 10 mg metoclopramide as a slow intravenous infusion over 15 minutes plus placebo (SIG group) and 146 patients were given 10 mg metoclopramide intravenous bolus infusion over two minutes plus placebo (BIG group). Nine of the 154 patients in the SIG group (5.8%) had akathisia compared with 36/146 patients (24.7%) in the BIG group (p<0.001, OR 5.273, 95% CI 2.43 to 11.403). Severe akathisia were observed in 13/45 (28.8%). The incidence of severe akathisia was significantly higher in the BIG group (30.5%; 11/36) than in the SIG group (22.2%; 2/9), p = 0.009. Metoclopramide successfully relieved the presenting symptom(s) of 137/146 (90.8%) and 139/154 (90.2%) patients in the BIG and SIG groups, respectively. CONCLUSIONS: This study suggests that slowing the rate of infusion of metoclopramide is an effective strategy for reducing the incidence of akathisia in patients with headache, and/or nausea/vomiting in ED.

In some instances conventional imaging techniques fail to differentiate meningiomas from isolated dural metastasis. This study aimed to evaluate the role of diffusion and perfusion-weighted MRI in differentiating meningiomas and dural metastasis. In this study, 14 metastasis and 26 meningiomas were involved. The imaging characteristics were analyzed using conventional MRI. Diffusion-weighted MRI was performed and ADC values were calculated from the solid components and the peritumoral edema. Perfusion-weighted MRI was performed and relative cerebral blood volume (rCBV) was calculated. Student's t test was used for the statistical analysis. Dural metastasis and meningiomas could not be differentiated by qualitative assessment of conventional and diffusion-weighted MRI. The mean intratumoral and peritumoral ADC values were not statistically significant (p > 0.05). The rCBV ratios for dural metastasis and meningiomas were 4.13 ± 2.32 and 7.32 ± 4.10 respectively and the difference between two was statistically significant (p = 0.003). Peritumoral rCBV ratios for dural metastasis and meningiomas were not statistically significant (p > 0.05). Conventional MRI findings of dural metastasis and meningiomas may overlap in some lesions. In differentiation of these lesions diffusion-weighted MRI yields no further information additional to conventional sequences. Perfusion-weighted MRI can be useful to distinguish these lesions by demonstrating high intratumoral rCBV ratios for meningiomas and low rCBV ratios for metastasis.

The conductivity, mobility, photoconductivity and photo response measurements in GaS0.75Se0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10-9 (Ω-cm)-1, 48 cm2V-1s-1 and ∼109 cm-3, respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor-single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7 × 1014 and 5.3 × 1013 cm-3, respectively. The mobility-temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 310 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo-response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent-light intensity dependence in these crystals obeys the power law, Iph ∝ φγ with γ between 1.7 and 2.0 for various applied fields and temperatures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The study of space-charge-limited currents (SCLC) in amorphous InSe thin films is presented. The temperature-dependent current–voltage (J–V) measurements were carried out for TO/a-InSe/Au sandwich structures in the range of 200–320 K. For all samples, ohmic behavior was observed up to an electric field strength of about 2×105V cm−1. From the temperature dependence of conductivity data, the position of the thermal equilibrium Fermi level Efois determined as 250 meV above the valence band Ev. At higher electric field strength values in the SCLC regions, the proportionality constant of voltage changes is between 2 and 2.9 with temperature. The analysis of J–V characteristics using the SCLC method and analytical approach for the determination of density of states (DOS) in the energy range of 190–250 meV shows that DOS changes between 3.8×1017−1.7×1018eV−1cm−3with energy. The energy distribution of DOS is temperature independent indicating that the SCLC in these amorphous films is related to the bulk, not to the surface layer between the contact and the film.

GaSe single crystals grown by Bridgman method have been doped by ion implantation technique. The samples were bombarded in the direction parallel to c-axis by Si ion beam of about 100 keV to doses of 1 × 10¹⁶ ions/cm² at room temperature. The effects of Si implantation with annealing at 500 and 600 °C on the electrical properties have been studied by measuring the temperature dependent conductivity and photoconductivity under different illumination intensities in the temperature range of 100–320 K. It is observed that Si implantation increases the room temperature conductivity 10⁻⁷ to 10⁻³ (Ω-cm)⁻¹ depending on the post annealing temperature. The analysis of temperature dependent conductivity shows that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Annealing of the samples at and above 600 °C weakens the temperature dependence of the conductivity and photoconductivity. This indicates that annealing of the implanted samples activates Si-atoms and increases structural deformations and stacking faults. The same behavior was observed from photoconductivity measurements. Hence, photocurrent-illumination intensity dependence in the implanted samples obeys the power low Ipc ∝ Φⁿ with n between 1 and 2 which is an indication of continuous distribution of localized states in the band gap. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

N-implantation to GaSe single crystals was carried out perpendicular to c-axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100-320 K. It was observed that N-implantation decreases the resistivity values down to 10³ Ω-cm depending on the annealing temperature, from the room temperature resistivity values of as-grown samples lying in the range 10⁶-10⁷ Ω-cm. The temperature dependent conductivities exhibits two regions (100-190 and 200-320 K) with the activation energies of 234-267 meV and 26-74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility-temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N-implantation, the carrier density was analyzed by using single donor-single acceptor model. We found acceptor ionization energy as Ea = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and Nd = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Conducting polymers of polysiloxane-polypyrrole were synthesized by electropolymerization of the pyrrole monomer through pyrrole moieties in N-pyrrole-terminated polysiloxanes. Sodium paratoluene sulfonate was used as the electrolyte. Scanning electron microscopy (SEM) was used to determine the surface morphology of the films. The room-temperature conductivity values of the films were found to be in the range of 1.9–4.4 × 10⁻⁴ (Ω cm)⁻¹, depending on the supporting electrolyte concentration. The temperature dependence of the dc conductivities of the copolymers having different dopant concentrations was investigated within the temperature range of 100–320 K. The evaluated parameters showed that the electrical transport is dominated by variable range hopping. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 52–56, 2002

Indium selenide thin films were deposited onto glass substrates kept at 150 °C by thermal evaporation of α-In2Se3. Some of the films were annealed at 150 °C and 200 °C and they all were found to exhibit p-type conductivity without intentional doping. Scanning electron microscopy (SEM) established that the films have an atomic content of In51Se49. X-ray diffraction (XRD) indicated that the as-grown films were amorphous in nature and became polycrystalline β-In2Se3films after annealing. The analysis of conductivity temperature-dependence measurements in the range 320–100 K revealed that thermal excitation and thermionic emission of the carriers are the predominant conduction mechanisms above 200 K in the amorphous and polycrystalline samples, respectively. The carrier transport below 200 K is due to variable range hopping in all the samples. Hall measurements revealed that the mobility of the polycrystalline films is limited by the scattering of the charged carriers through the grain boundaries above 200 K. © 2001 Kluwer Academic Publishers

Thin films of nickel manganite were deposited onto different substrates by means of electron beam evaporation from a powder source of the compound and annealed at 500 and 600°C for 30min. in air, oxygen or nitrogen to study the effects of annealing temperature and atmosphere on the structure and properties of grown thin films. X-ray diffraction and infrared spectroscopy were used to confirm the formation of nickel manganite; the integrity of the films and their elemental compositions were assessed using a scanning electron microscope equipped with an energy dispersive X-ray analyser. Resistance–temperature characteristics were measured between room temperature and 600K. The values of thermistor constant (B) were found to be dependent on the post growth treatments; annealing in O2or air yielded the lowest values of B∼2000–3000K, while as-deposited and N2annealed layers had values of B∼5000–6500K.

Abstract Aims To determine the efficacy of dacryocystoplasty with balloon dilatation in the treatment of complete and partial obstruction of the lacrimal drainage system. Methods The procedure was performed on 26 patients with epiphora due to complete (n=16) or partial (n=10) obstruction of the lacrimal drainage system. A flexible tipped guide wire was introduced through the superior canaliculus into the inferior meatus and manipulated out of the nasal cavity. A 3 mm balloon was then introduced in a retrograde direction over the guide wire and dilated at the obstruction site. Results The procedure was technically successful in all patients with partial obstruction, but unsuccessful in four of 16 cases with complete obstruction. Reobstruction occurred in eight of 12 patients with complete obstruction, and in five of 10 patients with partial obstruction. The overall success rate was 25% for complete and 50% for partial obstructions. The mean follow up was 14 months (8–37 months). Conclusion Although the balloon dacryocystoplasty is a simple and minimally invasive technique, the outcome from our study indicates that it is not advisable for treatment of complete obstruction of the lacrimal drainage system. Balloon dilatation may prove suitable for the treatment of patients with partial obstruction below the level of the lacrimal sac, especially in those who are poor candidates for surgery, or who do not wish to undertake dacryocystorhinostomy. Even in the partial obstruction group the success rate was only 50%, so that further modification to the technique and controlled studies are likely to be required before it could be recommended for general use.

The correlation between the electrical properties of vacuum evaporated InSe thin films and the growth conditions as well as post depositional annealing has been investigated. The electrical properties of the deposited films have been studied in the temperature range of 50–320 K. The donor levels present in the InSe films have been analysed by applying the single donor-single acceptor model to the electrical data.

X‐ray powder diffraction data were obtained for Cu3In5Se9and Cu3Te9, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu3In5Se9, was identified to be n‐type with a room temperature resistivity of 3 × 103Ω·cm which decreases with increasing temperature. For T< 65 K impurity activation energy of 0.03 eV and for T> 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu3In5Te9exhibits p‐type conduction with a room temperature resistivity of 8.5 × 10−3Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.

The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20–230 K. Conductivity data for the high temperature region has been analysed using Seto’s model of thermionic emission. At intermediate temperatures it was found that thermionic emission and tunnelling of carriers through the potential barrier both contribute to the conductivity. Below 100 K Mott’s hopping process appears to be the predominant conduction mechanism.

Cerebal hydatid cysts account for 2% of all intracranial masses. Preoperative diagnosis is important since cyst rupture and spillage may cause an anaphylactic reaction. CT is the primary modality for the diagnosis. Two forms of cerebral hydatid cysts have been reported on the basis of CT appearances: unilocular and multilocular. Demostration of the cyst wall is important for the diagnosis. MRI is superior to CT for demostrating the cyst capsule and perifocal oedema. We retrospectively reviewed the CT and MRI findings of 6 surgically proven cases of cerebal hydatid cyst and compared the two modalities on the basis of their demonstration of findings helpful in the diagnosis, such as the capsule and perifocal oedema. In 1 case CT showed the capsule. In 2 cases MRI showed a hypointense capsule around the cyst on T2-weighted images. While CT is the modality of choice, in clinical practice MRI is superior for demonstrating the cys capsule, which is a helpful findings in the diagnosis and can be used in inconculsive cases.

Indium selenide films were obtained by the thermal evaporation of undoped crystals at substrate temperatures of 210 and 300 °C. Films were found to exhibit n-type conductivity. Scanning electron microscopy established that the films grown on glass substrates held at 210 °C had an atomic content of In46.66Se53.34, whereas the films obtained under the same conditions and annealed in vacuum at 150 °C had an atomic content of In48.13Se51.87. X-Ray diffraction indicated that the films were polycrystalline in nature and crystallized in the D13hspace group. From an analysis of Hall and conductivity measurements, performed in the temperature ranges 110–320 K and 10–320 K respectively, thermionic emission is considered to be the predominant transport mechanism above 200 K. The current transport below 75 K is due to the hopping of carriers between localized states. In the intermediate temperature region, both thermally assisted tunnelling and thermionic emission contribute to the conduction.

X‐ray powder diffraction studies revealed that Ag3Ga5Te9and Ag3In5Se9crystallize in orthorhombic and tetragonal systems, respectively. The temperature dependent conductivity and Hall effect measurements have been carried out between 65—480 K. Ag3Ga5Te9exhibits p‐type conduction with a room temperature conductivity of 4.3 × 10—4(Ω · cm)—1and mobility less than 1 cm2/V · s. Ag3In5Se9was identified to be n‐type with room temperature conductivity 7.2 × 10—5(Ω · cm)—1and mobility 20 cm2/V · s. From temperature dependence of the conductivity three different impurity ionization energies were obtained for both compounds. The anomalous behavior observed in the temperature dependence of mobility was attributed to the different features of the microstructure.

Solid and papillary epithelial neoplasm of the pancreas is a very rare low-grade malignant neoplasm with only 126 cases reported in the literature and seen mostly in young female patients. Surgical excision means cure in cases before malignant degeneration developed. Its characteristic findings are typical location in the tail of the pancreas, peripheral capsule formation, hypodensity on CT images, and hyperintense internal signal characteristics on T1-weighted MR images secondary to hemorrhage and accumulation of methemoglobine molecule. These findings are enough for the preoperative diagnosis that may lead to early surgery and cure. We present the CT and MR findings of this very rare neoplasm in a case report.

Tuberculosis (TB) of spleen is rare and usually occurs in miliarv form. Macronodular form is extremely rare, Immunodeficiency associated with alcoholism IV drug abuse, diabetes, cancer, corticosteroid therapy, and AIDS are prominent risk factors. Early diagnosis and treatment are important, because untreated abdominal TB carries a 50% mortality rate. We report US and CT of five cases with splenic TB. Our cases showed multiple small hypoechoic and hypodense nodules on US and CT, respectively, except one case whose US was normal. All cases also had extrasplenic involvement. The diagnosis of TB was established in two cases by cervical and in one case by submandibular lymph node biopsy, in one case by peritoneal biopsy, and in one case by a typical spinal lesion at L2–3. The US and CT findings are not specific for TB, but especially in endemic regions TB should be included in the differential diagnosis of Splenic lesions.

Polyarteritis nodosa is a multisystem disease primarily involving the small and medium-sized vessels. Prognosis depends on the presence and severity of visceral involvement. Thrombosis and aneurysm formation commonly occur in kidney and gastrointestinal tract. Although hepatic involvement is also common, hepatic aneurysmal rupture with intrahepatic or perihepatic hematoma formation is infrequent. Hemobilia secondary to aneurysmal rupture is a very rare condition. We present a case of polyarteritis nodosa accompanied by hemobilia and intestinal hemorrhage secondary to hepatic and mesenteric aneurysmal rupture.

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Mesenteric cysts are rare intraabdominal tumors. We review the diagnosis, laparoscopic management, patient’s outcome and follow-up of evaluation for three cases of mesenteric cyst that presented to Istanbul University, Istanbul Medical School, Department of Surgery, from 1999 to 2002. All of the patients presented with nonspecific abdominal symptoms such as constipation, abdominal discomfort, and anorexia. Preoperative evaluation for differentiating mesenteric cyst from malignancy is made by abdominal ultrasound and computed tomography. The procedure was completed laparoscopically using three trocars in three patients. In one patient retroperitoneal resection was performed. There were no intraoperative or postoperative complications. The follow-up periods ranged from 6 to 36 months, and there were no recurrences. Currently, the surgical treatment of mesenteric cyst should be performed by laparoscopy, which offers significant advantages in terms of reduced morbidity and hospital stay. For appropriate cases in which cyst arises from mesenterium of colon, the retroperitoneal approach should be applied.