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2. The n-type doping of GaAsAlxGa1−xAsand growth of two-dimensional electron gas structures with DEAlH-NMe3as Al source

3. Referate

4. Referate

6. High-performance Al-free In0.75Ga0.25P/InP/InxGa1-xAs/InP (x ≥ 53%) backside-doped split-channel HFETs with 0.25 µm T-gates

7. 0.5 μm gate length InP/In0.75 Ga0.25As/InP pseudomorphic HEMT with high DC and RF performance

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