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New stable palladium−hydride complexes catalyze the highly regio‐ and stereoselective isomerization of 1‐alkenes at multiple positions. Tuning the ligand and the reaction conditions allowed the position and geometry of the double bonds to be controlled with excellent conversions and selectivities. The catalytic species, a Pd−H complex, was prepared by reacting [LPdCl2] with a silver salt, followed by conversion into Pd−H by using a silyl hydride. The structures of the Pd complexes were determined by using X‐ray crystallography and NMR spectroscopy. Hydride and seek: New stable palladium−hydride complexes catalyze the highly regio‐ and stereoselective isomerization of 1‐alkenes at multiple positions. Tuning the ligand and the reaction conditions allowed the position and geometry of the formed double bonds to be controlled with excellent conversions and selectivities. The catalytic species, a Pd−H complex, was confirmed by X‐ray crystallography and NMR spectroscopy.

Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm2/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm2/V·s).

Thin film transistors (TFTs) fabricated by solution processing of sol–gel oxide semiconductor precursors in the group In–Ga–Zn are described. The TFT mobility varies over a wide range depending on the precursor materials, the composition, and the processing variables, with the highest mobility being about 30 cm2/(V s) for IZO and 20 cm2/(V s) for IGZO. The positive dark bias stress effect decreases markedly as the mobility increases and the high mobility devices are quite stable. The negative bias illumination stress effect is also weaker in the higher mobility TFTs, and some different characteristic properties are observed. The TFT mobility, threshold voltage, and bias stress properties are discussed in terms of the formation of self-compensated donor and acceptor states, based on the chemistry and thermodynamics of the sol–gel process.