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Your search keyword '"Suomalainen, Soile"' showing total 11 results
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11 results on '"Suomalainen, Soile"'

1. Sub-100-fs bulk solid-state lasers near 2-micron

Author

Wang, Hannan, Petrov, Valentin, Wang, Yicheng, Chen, Weidong, Pan, Zhongben, Zhao, Yongguang, Wang, Li, Mero, Mark, Choi, Sun Young, Rotermund, Fabian, Cho, Won Bae, Jing, Wei, Huang, Hui, Yuan, Hualei, Cai, Huaqiang, Zhang, Lizhen, Lin, Zhoubin, Loiko, Pavel, Mateos, Xavier, Xu, Xiaodong, Xu, Jun, Yu, Haohai, Zhang, Huaijin, Suomalainen, Soile, Guina, Mircea, Härkönen, Antti, and Griebner, Uwe

Published
2019
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2. 1.34  μm VECSEL mode-locked with a GaSb-based SESAM

Author

Härkönen, Antti, Suomalainen, Soile, Rantamäki, Antti, Nikkinen, Jari, Wang, Yicheng, Griebner, Uwe, Steinmeyer, Günter, and Guina, Mircea

Abstract

Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.37  μm. The proposed approach has two key benefits: the QWs can be grown lattice matched, and only a small number of Bragg reflector layers is required to provide high reflectivity. Pump–probe measurements also reveal that the AlGaSb/GaSb structure exhibits an intrinsically fast absorption recovery on a picosecond timescale. The mode-locked laser pulse train had a fundamental repetition rate of 1.03 GHz, a pulse duration of ∼5  ps, and a peak power of ∼1.67  W. The demonstration paves the way for exploiting GaSb-based SESAMs for mode locking in the 1.3–2 μm wavelength range, which is not sufficiently addressed by GaAs and InP material systems.

Published
2018

3. Highly-efficient Ho:KY(WO4)2thin-disk lasers at 2.06 μm

Author

Jitsuno, Takahisa, Shao, Jianda, Rudolph, Wolfgang, Mateos, Xavier, Loiko, Pavel, Lamrini, Samir, Scholle, Karsten, Fuhrberg, Peter, Suomalainen, Soile, Härkönen, Antti, Guina, Mircea, Vatnik, Sergei, Vedin, Ivan, Aguiló, Magdalena, Díaz, Francesc, Wang, Yicheng, Griebner, Uwe, and Petrov, Valentin

Published
2018
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4. Integrated multi-wavelength mid-IR light source for gas sensing

Author

Druy, Mark A., Crocombe, Richard A., Barnett, Steven M., Profeta, Luisa T., Azad, Abul K., Karioja, Pentti, Alajoki, Teemu, Cherchi, Matteo, Ollila, Jyrki, Harjanne, Mikko, Heinilehto, Noora, Suomalainen, Soile, Zia, Nouman, Tuorila, Heidi, Viheriälä, Jukka, Guina, Mircea, Buczyński, Ryszard, Kasztelanic, Rafał, Salo, Tomi, Virtanen, Sami, Kluczyński, Paweł, Borgen, Lars, Ratajczyk, Marcin, and Kalinowski, Przemyslaw

Published
2018
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5. 87  fs mode-locked Tm,Ho:CaYAlO_4 laser at ∼2043  nm

Author

Zhao, Yongguang, Wang, Yicheng, Zhang, Xuzhao, Mateos, Xavier, Pan, Zhongben, Loiko, Pavel, Zhou, Wei, Xu, Xiaodong, Xu, Ju, Shen, Deyuan, Suomalainen, Soile, Härkönen, Antti, Guina, Mircea, Griebner, Uwe, and Petrov, Valentin

Abstract

We report on, to the best of our knowledge, the first sub-100 fs mode-locked Ho^3+-laser in the 2 μm spectral range employing a disordered co-doped Tm,Ho:CaYAlO_4 (Tm,Ho:CALYO) crystal as a gain medium. Pulses as short as 87 fs are produced with an average output power of 27 mW at 80.45 MHz repetition rate. An output power of 96 mW is reached for a pulse duration of 98 fs.

Published
2018

6. Multi-wavelength mid-IR light source for gas sensing

Author

Soskind, Yakov G., Olson, Craig, Karioja, Pentti, Alajoki, Teemu, Cherchi, Matteo, Ollila, Jyrki, Harjanne, Mikko, Heinilehto, Noora, Suomalainen, Soile, Viheriälä, Jukka, Zia, Nouman, Guina, Mircea, Buczyński, Ryszard, Kasztelanic, Rafał, Kujawa, Ireneusz, Salo, Tomi, Virtanen, Sami, Kluczyński, Paweł, Sagberg, Håkon, Ratajczyk, Marcin, and Kalinowski, Przemyslaw

Published
2017
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9. Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2μm

Author

Härkönen, Antti, Paajaste, Jonna, Suomalainen, Soile, Alanko, Jukka-Pekka, Grebing, Christian, Koskinen, Riku, Steinmeyer, Günter, and Guina, Mircea

Abstract

We report on a passively mode-locked optically pumped GaSb-based semiconductor disk laser producing stable picosecond optical pulses at a 1.95μm wavelength. The gain mirror was comprised of a 15 quantum well InGaSb/GaSb structure. A fast semiconductor saturable absorber mirror with three InGaSb/GaSb quantum wells was used to attain self-starting mode-locked operation at a fundamental repetition rate of 881.2MHz. The laser produced pulses with 30pJ energy and a duration of 1.1ps within a factor of 2 of the Fourier limit.

Published
2010

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