1. X-Ray Detector With Internal Gain Based on a SiC npn Structure
- Author
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Wang, Jing, Chen, Liang, Bai, Song, Zhou, Leidang, Wang, Fangbao, Zhang, Silong, Fan, Tingting, Huang, Runhua, Yang, Shaohua, Tian, Geng, and Ouyang, Xiaoping
- Abstract
A two-terminal npn device based on 4H-SiC has been employed as a radiation detector for the first time. This device was designed as a vertical npn structure with a sensitive area of up to 1 cm2, and the thickness of the sensitive layer was about
$30~\mu $ $\sim ~0.12$ $\cdot $ $^{-{2}}$ $36.67~\mu $ $\cdot $ $^{-{1}} \cdot $ $^{-{2}}$ $28.09~\mu $ - Published
- 2024
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