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0.7Sr0.7Bi0.2TiO3-0.3BiFeO3- 2%Mn thin film possesses excellent energy storage density∼ 47.6 J cm-3, good thermal stability and strong fatigue endurance performances, makeing it an outstanding environmentally friendly material for electrostatic energy storage. [Display omitted] • Mn2+ combines with oxygen vacancies, forming defect complex, which results in decline in leakage current. • Defect polarization P D leads to obviously enhancement in breakdown strength. • U rec of 47.6 J/cm3 with η of 65.68 % are achieved in 2 Mn thin film. • 2 Mn thin film shows excellent thermal stability (35–115 °C). • 2 Mn thin film exhibits strong fatigue endurance behavior after 108 cycles. Thin film capacitors with excellent energy storage performances, thermal stability and fatigue endurance are strongly desired in modern electrical and electronic industry. Herein, we design and prepare lead-free 0.7Sr 0.7 Bi 0.2 TiO 3 -0.3BiFeO 3 - x %Mn (x = 0, 0.5, 1.5, 2, 3) thin films via sol-gel method. Mn ions of divalent valence combine with oxygen vacancies, forming defect complex, which results in marked decline in leakage current and obvious enhancement in breakdown strength. A high energy storage density ∼ 47.6 J cm−3 and good efficiency ∼ 65.68 % are simultaneously achieved in 2% Mn doped 0.7Sr 0.7 Bi 0.2 TiO 3 -0.3BiFeO 3 thin film capacitor. Moreover, the 2% Mn-doped thin film exhibits excellent thermal stability in wide operating temperature range (35–115 °C) and strong fatigue endurance behaviors after 108 cycles. The above results demonstrate that 2% Mn-doped 0.7Sr 0.7 Bi 0.2 TiO 3 -0.3BiFeO 3 thin film capacitor with superior energy storage performances is a potential candidate for electrostatic energy storage. [ABSTRACT FROM AUTHOR]