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This paper reports a new BSIM3v3 SPICE reliability model for describing the reliability of hot carrier injection (HCI) in MOSFET, which can be widely used in traditional process MOSFET. In this work, thousands of BSIM3v3 model parameters are analyzed, seven parameters primarily affected by HCI are extracted and optimized in original BSIM3v3 source code.The I-V simulation results after parameter extraction fits the measured results very well, so an accurate new model of MOSFETs reliability model is achieved. Using the new BSIM3v3 SPICE reliability model, the idvd curves at the stress time from 10 to 50000s of the nMOSFET with 10um gate length and 0.5um gate width can be achieved. So the device characters variation with time can be monitored. Besides, the typical Idsat, Vth, Idlin and Gmax degradation as a function of stress time are also plotted and the lifetime of MOSFETs can be evaluated from these functions.

This paper reports a new BSIM3v3 SPICE reliability model for describing the reliability of hot carrier injection (HCI) in MOSFET, which can be widely used in traditional process MOSFET. In this work, thousands of BSIM3v3 model parameters are analyzed, seven parameters primarily affected by HCI are extracted and optimized in original BSIM3v3 source code.The I-V simulation results after parameter extraction fits the measured results very well, so an accurate new model of MOSFETs reliability model is achieved. Using the new BSIM3v3 SPICE reliability model, the idvd curves at the stress time from 10 to 50000s of the nMOSFET with 10µm gate length and 0.5µm gate width can be achieved. So the device characters variation with time can be monitored. Besides, the typical Idsat, Vth, Idlin and Gmax degradation as a function of stress time are also plotted and the lifetime of MOSFETs can be evaluated from these functions.