8 results on '"Zito, Domenico"'
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2. A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS
- Author
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Doan Nhut, Tan and Zito, Domenico
- Abstract
This brief reports a compact DC-110GHz single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch adopts solely three n-MOSFETs, two of them with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET in parallel to the gate resistance of the series n-MOSFET to improve isolation. Unlike prior wideband mm-wave switches, it does not make use of any large passive components, such as spiral inductors, transformers and transmission lines, which are prone to large parasitic effects, including losses, and require large area on silicon. Altogether, the novel switch circuit allows a very compact design, low losses and high isolation performance. The switch exhibits an insertion loss lower than 3.1 dB, an isolation better than 22 dB, and a return loss better than 12 dB, over the entire frequency range from DC to 110 GHz. The area on die amounts to
$160~\mu \text{m}^{2}$ - Published
- 2023
- Full Text
- View/download PDF
3. Outgoing Editorial
- Author
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Zhao, Weisheng, Li, Hai Helen, and Zito, Domenico
- Abstract
Dear TCAS-I Readers,
- Published
- 2023
- Full Text
- View/download PDF
4. microRNA 125a Regulates MHC-I Expression on Esophageal Adenocarcinoma Cells, Associated With Suppression of Antitumor Immune Response and Poor Outcomes of Patients.
- Author
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Mari, Luigi, Hoefnagel, Sanne J.M., Zito, Domenico, van de Meent, Marian, van Endert, Peter, Calpe, Silvia, Sancho Serra, Maria del Carmen, Heemskerk, Mirjam H.M., van Laarhoven, Hanneke W.M., Hulshof, Maarten C.C.M., Gisbertz, Susanne S., Medema, Jan Paul, van Berge Henegouwen, Mark I., Meijer, Sybren L., Bergman, Jacques J.G.H.M., Milano, Francesca, and Krishnadath, Kausilia K.
- Abstract
Background & Aims Immune checkpoint inhibition may affect growth or progression of highly aggressive cancers, such as esophageal adenocarcinoma (EAC). We investigated the regulation of expression of major histocompatibility complex, class 1 (MHC-I) proteins (encoded by HLA-A, HLA-B , and HLA-C) and the immune response to EACs in patient samples. Methods We performed quantitative polymerase chain reaction array analyses of OE33 cells and OE19 cells, which express different levels of the ATP binding cassette subfamily B member 1 (TAP1) and TAP2, required for antigen presentation by MHC-I, to identify microRNAs (miRNAs) that regulate their expression. We performed luciferase assays to validate interactions between miRNAs and potential targets. We overexpressed candidate miRNAs in OE33, FLO-1, and OACP4 C cell lines and performed quantitative polymerase chain reaction, immunoblot, and flow cytometry analyses to identify changes in messenger RNA (mRNA) and protein expression; we studied the effects of cytotoxic T cells. We performed miRNA in situ hybridization, RNA-sequencing, and immunohistochemical analyses of tumor tissues from 51 untreated patients with EAC in the Netherlands. Clinical and survival data were collected for patients, and EAC subtypes were determined. Results We found OE19 cells to have increased levels of 7 miRNAs. Of these, we found binding sites for miRNA 125a (MIR125a)-5p in the 3′ untranslated region of the TAP2 mRNA and binding sites for MIR148a-3p in 3′ untranslated regions of HLA-A , HLA-B , and HLA-C mRNAs. Overexpression of these miRNAs reduced expression of TAP2 in OE33, FLO-1, and OACP4 C cells, and reduced cell-surface levels of MHC-I. OE33 cells that expressed the viral peptide BZLF1 were killed by cytotoxic T cells, whereas OE33 that overexpressed MIR125a-5p or MIR 148a along with BZLF1 were not. In EAC and nontumor tissues, levels of MIR125a-5p correlated inversely with levels of TAP2 protein. High expression of TAP1 by EAC correlated with significantly shorter overall survival times of patients. EACs that expressed high levels of TAP1 and genes involved in antigen presentation also expressed high levels of genes that regulate the adaptive immune response, PD-L1 , PD-L2 , and IDO1 ; these EACs had a poor response to neoadjuvant chemoradiotherapy and associated with shorter overall survival times of patients. Conclusions In studies of EAC cell lines and tumor tissues, we found increased levels of MIR125a-5p and MIR148a-3p to reduce levels of TAP2 and MHC-I, required for antigen presentation. High expression of MHC-I molecules by EAC correlated with markers of an adaptive immune response and significantly shorter overall survival times of patients. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF
5. Editors' Choice-Review-Semiconductor Integrated Radar for Sensing Applications
- Author
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Lin, Jenshan, Li, Changzhi, Chang, Chan, Tsai, Heng, Zito, Domenico, and Chang, Fuh
- Abstract
This paper reviews recent developments of semiconductor integrated radar for modern sensing applications. It focuses on a few representative works of integrated radar sensor chips that operate in the continuous-wave mode and the ultra-wideband pulse mode. The benefits of solid state science and technology to modern radar-on-chip solution are clearly demonstrated through those examples. The paper also presents some commercial application case studies, and discusses the outlook of integrated radar solution and the corresponding need from future semiconductor technologies.
- Published
- 2018
6. 50 GHz active‐LC CMOS oscillator: Theoretical study and experimental proofs
- Author
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Pepe, Domenico, Chlis, Ilias, and Zito, Domenico
- Abstract
A 50 GHz cross‐coupled differential‐pair oscillator with a high‐Q active inductor in the LC tank has been designed and fabricated in 65 nm bulk complementary metal‐oxide semiconductor (CMOS) technology. The principle of operation is explained and a complete theoretical study is carried out. The analytical expressions for the open loop transfer function, oscillation frequency, start‐up condition, tank impedance, and phase noise are derived. The results of the analytical study are compared with those obtained by SpectreRF simulations in the Cadence design environment. Measurement results of the stand‐alone mm‐wave active inductor show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally the implementation of high‐Q active inductors operating at the millimeter waves in CMOS technology. The measurement results of the oscillator show a phase noise of −85 dBc/Hz at 1 MHz frequency offset from the carrier when the active inductor is switched off and −91 dBc/Hz when it is switched on, leading to a phased noise reduction of 6 dB. This original manuscript expands and extends the contents reported in the short conference paper “50 GHz LC‐active oscillator in 65 nm CMOS” presented at the 2015 IEEE 15th Mediterranean Microwave Symposium (MMS), selected and invited for publication in Radio Science—Special Issue on “Innovative Microwave Devices, Methods, and Applications”A 50 GHz active‐LC oscillator in 65 nm CMOS has been designed and characterized experimentallyA complete theoretical circuit analysis of the proposed oscillator has been carried out extensively in large details A 50 GHz oscillator with a high‐Q active inductor in the LC tank has been designed and fabricated in 65 nm bulk CMOS technology. The principle of operation is explained and a complete theoretical study is carried out. The analytical expressions for the open loop transfer function, oscillation frequency, start‐up condition, tank impedance and phase noise are derived. The results of the analytical study are compared with those obtained by simulations. Measurement results of the stand‐alone mm‐wave active inductor show an equivalent inductance of 133 pH with a quality factor exceeding 400 at 50 GHz, demonstrating experimentally the implementation of high‐Q active inductors operating at the millimeter‐waves in CMOS technology. The measurement results of the oscillator show a phase noise of −85 dBc/Hz at 1 MHz frequency offset from the carrier when the active inductor is switched off and −91 dBc/Hz when it is switched on, leading to a phased noise improvement of 6 dB.
- Published
- 2017
- Full Text
- View/download PDF
7. MIDAS: Automated Approach to Design Microwave Integrated Inductors and Transformers on Silicon.
- Author
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ALUIGI, Luca, ALIMENTI, Federico, PEPE, Domenico, ROSELLI, Luca, and ZITO, Domenico
- Subjects
MICROWAVE integrated circuits ,ELECTRIC inductors ,SILICON ,ELECTRIC transformers ,RADIO frequency ,MILLIMETER waves ,ELECTRONIC design automation - Abstract
The design of modern radiofrequency integrated circuits on silicon operating at microwave and millimeterwaves requires the integration of several spiral inductors and transformers that are not commonly available in the process design-kits of the technologies. In this work we present an auxiliary CAD tool for Microwave Inductor (and transformer) Design Automation on Silicon (MIDAS) that exploits commercial simulators and allows the implementation of an automatic design flow, including threedimensional layout editing and electromagnetic simulations. In detail, MIDAS allows the designer to derive a preliminary sizing of the inductor (transformer) on the bases of the design entries (specifications). It draws the inductor (transformer) layers for the specific process design kit, including vias and underpasses, with or without patterned ground shield, and launches the electromagnetic simulations, achieving effective design automation with respect to the traditional design flow for RFICs. With the present software suite the complete design time is reduced significantly (typically 1 hour on a PC based on Intel® Pentium® Dual 1.80 GHz CPU with 2-GB RAM). Afterwards both the device equivalent circuit and the layout are ready to be imported in the Cadence environment. [ABSTRACT FROM AUTHOR]
- Published
- 2013
8. Editors' Choice—Review—Semiconductor Integrated Radar for Sensing Applications
- Author
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Lin, Jenshan, Li, Changzhi, Chang, Chia-Chan, Tsai, Tsung-Heng, Zito, Domenico, and Chang, Sheng-Fuh
- Abstract
This paper reviews recent developments of semiconductor integrated radar for modern sensing applications. It focuses on a few representative works of integrated radar sensor chips that operate in the continuous-wave mode and the ultra-wideband pulse mode. The benefits of solid state science and technology to modern radar-on-chip solution are clearly demonstrated through those examples. The paper also presents some commercial application case studies, and discusses the outlook of integrated radar solution and the corresponding need from future semiconductor technologies.
- Published
- 2018
- Full Text
- View/download PDF
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