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1. Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

2. Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

3. List of Contributors

5. Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

7. Long catalyst-free InAs nanowires grown on silicon by HVPE

8. Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

9. Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

10. Dynamics of Gold Droplet Formation on SiO2/Si(111) Surface

12. Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type?

13. Selective growth of ordered hexagonal InN nanorods

15. Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

18. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

20. GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures

21. Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius

22. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

23. Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process

24. Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

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