74 results on '"Dehzangi, Arash"'
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2. Effect of DNA serial dilution on highly precise broadband plasmonic signature of a BALB/c rat’s dried DNA deposited on gold thin film
3. Associated Factors of Worrying About Loneliness Before Death
4. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation
5. Planar strained layer superlattice infrared photodetector using ion implantation
6. Planar Strained Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation
7. Students’ negative emotions and their rational and irrational behaviors during COVID-19 outbreak
8. Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice
9. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
10. Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices
11. Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices
12. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice
13. Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice
14. Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector
15. Avalanche Photodetector Based on InAs/InSb Superlattice
16. Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation
17. High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier
18. Type-II superlattice-based heterojunction phototransistors for high speed applications
19. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation
20. High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD
21. Transport Modelling of Multi-Phase Fluid Flow in Porous Media for Enhanced Oil Recovery
22. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
23. High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices
24. High speed antimony-based superlattice photodetectors transferred on sapphire
25. MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire
26. Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition
27. Silicon racetrack resonator based on nonlinear material
28. Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors
29. Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors
30. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices
31. Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers
32. Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor
33. Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetectors
34. Suppressing Spectral Crosstalk in Dual-Band Long- Wavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reflectors
35. High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition
36. High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices
37. Thin-Film Antimonide-Based Photodetectors Integrated on Si
38. nBn extended short-wavelength infrared focal plane array
39. Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future
40. Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection
41. Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study
42. Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate
43. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
44. Background–limited long wavelength infrared InAs/InAs1− xSbxtype-II superlattice-based photodetectors operating at 110 K
45. Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors
46. Impact of scaling base thickness on the performance of heterojunction phototransistors
47. Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
48. Structure and Physical Properties of NiO/Co3O4 Nanoparticles
49. Formation and characterization of ultrafine nanophosphors of lithium tetraborate (Li2B4O7) for personnel and medical dosimetry
50. Study of the side gate junctionless transistor in accumulation region
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