65 results on '"Elad, Danny"'
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2. Low Power 75–110 GHz SiGe Dicke Radiometer Front-End
3. A Compact Frequency-Tunable VGA for Multi-Standard 5G Transceivers
4. PVT Robust Passive Phase Shifter for 5G MIMO Applications
5. High Performance E-Band Variable Gain LNA with Image Reject Filter
6. High Performance 60 GHz Bidirectional Phased Array Front End in SiGe BiCMOS
7. A Single-Path Reconfigurable Frequency Multiplier for 28/39 GHz Dual-Band Transceivers
8. A Variable Gain E-Band Power Amplifier using Highly Linear Embedded Attenuator
9. Low Loss 28 GHz Digital Phase Shifter for 5G Phased Array Transceivers
10. High Linearity 57–66 GHz SiGe Receiver for Outdoor Point-to-Point Communication
11. Sensitivity of SOI Lateral Diodes for Bolometric Sensing
12. D-Band 360° Phase Shifter with Uniform Insertion Loss
13. A Dual-Loop Synthesizer With Fast Frequency Modulation Ability for 77/79 GHz FMCW Automotive Radar Applications
14. E-band reflection-type phase shifter with uniform insertion loss
15. D-Band total power radiometer front end in 90nm SiGe technology
16. D-band Dicke-radiometer in 90 nm SiGe BiCMOS technology
17. W-band SiGe attenuators based on compact low-VSWR topologies
18. A fully integrated 75–83 GHz FMCW synthesizer for automotive radar applications with −97 dBc/Hz phase noise at 1 MHz offset and 100 GHz/mSec maximal chirp rate
19. A 230 GHz quadrupler with 2 dBm output power in 90 nm SiGe BiCMOS technology
20. A 21 dBm 60 GHz SiGe power amplifier using modified Wilkinson combiner
21. H-band SiGe frequency multiplier chain with 4 dBm output power
22. 24×24 Pixel focal plane array for THz imaging applications
23. A K-band low phase noise and high gain Gm boosted colpitts VCO for 76–81 GHz FMCW radar applications
24. A 57–66 GHz reflection-type phase shifter with near-constant insertion loss
25. High-Performance E-Band Transceiver Chipset for Point-to-Point Communication in SiGe BiCMOS Technology
26. A 14 dBm 110–130 GHz power amplifier and doubler chain in 90 nm SiGe BiCMOS technology
27. Charge pump architecture with reduced medium and high frequency noise
28. Antenna-Coupled MOSFET Bolometers for Uncooled THz Sensing
29. On-Chip Millimeter Wave Antennas and Transceivers
30. Key components of a D-band Dicke-radiometer in 90 nm SiGe BiCMOS technology
31. A 0.6–1.2 THz monolithic imaging array
32. Towards mm-wave camera assisted human stress gauging
33. A robust low phase noise Ku band VCO with 23.3% tuning range for E-band and V-band backhaul transceivers
34. A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology
35. High-performance 81–86 GHz transceiver chipset for Point-to-Point communication in SiGe BiCMOS technology
36. A 122-150 GHz LNA with 30 dB gain and 6.2 dB noise figure in SiGe BiCMOS technology
37. A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology
38. An E-band 40dB dynamic range multi-tanh power detector in 0.13μm SiGe technology
39. Analog read-out integragted W-band Dicke-radiometer in 0.13um SiGe design and characterization of W-band radiometer RFIC intended for FPA imager
40. A 240 GHz multiplier chain with −0.5 dBm output power in SiGe BiCMOS technology
41. Modeling and optimization method for thermal THz sensing with MOS transistors
42. Wide bandwidth room-temperature THz imaging array based on antenna-coupled MOSFET bolometer
43. Variable Delay Transmission Lines in advanced CMOS SOI technology
44. A 71–86GHz multi-tanh up-conversion mixer achieving +1dBm OP1dB in 0.13 μm SiGe technology
45. TSV multi-signal connection compact modeling
46. Uncooled and passive 0.5–1.5 THz FPA imager: Design and characterization of focal plane array imager based on antenna-coupled MOSFET bolometers
47. Electrical characterization of low-cost glass/epoxy laminates at millimeter wave frequencies
48. Wideband planar skirt antenna and its application for the detection of terahertz radiation
49. Design of a cloverleaf antenna for an antenna coupled bolometer for room temperature THz imaging
50. A 60GHz, linear, direct down-conversion mixer with mm-Wave tunability in 32nm CMOS SOI
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