247 results on '"Endoh, T."'
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2. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology
3. Contributors
4. 25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 107 for eFlash-type MRAM
5. Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer
6. Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields
7. Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability
8. Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions With MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer
9. Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers
10. Contributor contact details
11. Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology
12. First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
13. How a Small Reef in the Kuroshio Cultivates the Ocean
14. Enhancement of magnetic coupling and magnetic anisotropy in MTJs with multiple CoFeB/MgO interfaces for high thermal stability
15. Structural Analysis of CoFeB/MgO-Based Perpendicular MTJs With Junction Size of 20 nm by STEM Tomography
16. Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis
17. Full-scale accelerated loading test for load distribution on subgrade due to CFA stabilized base
18. Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface
19. Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
20. Scalability of Quad Interface p-MTJ for 1× nm STT-MRAM with 10 ns Low Power Write Operation, 10 Years Retention and Endurance > 1011
21. AB1103 AUTOMATIC FINGER JOINT BONE EROSION SCORE PREDICTION CONSIDERING 2-TIME-POINT X-RAYS OF PATIENTS WITH RHEUMATOID ARTHRITIS BY DEEP LEARNING
22. Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm
23. Magnetic properties of Co film in Pt/Co/Cr2O3/Pt structure
24. First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology
25. Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers
26. A novel memory test system with an electromagnet for STT-MRAM testing
27. Effect of surface modification treatment of buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions
28. An Ultra-Low-Power STT-MRAM-Based Multi-Core Associative Coprocessor with Inter-Core Pipeline Scheme for Large-Scale Full-Adaptive Nearest Pattern Search
29. Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions
30. Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm
31. Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction
32. 14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process
33. Accurate error bit mode analysis of STT-MRAM chip with a novel current measurement module implemented to gigabit class memory test system
34. EFFICIENCY AND STABILITY OF AMORPHOUS SILICON TWO-STACKED TANDEM SOLAR CELLS
35. First-Principles Study on Shape Degradation during Oxidation Process for Three-Dimensional Structure Devices
36. Ultralow-Power and Compact Nonvolatile Brain-Inspired VLSIs Based on CMOS/MTJ Hybrid Technology
37. Association between nutritional status and the risk for poor prognosis of clostridium difficile-associated diarrhea
38. M2 G-quadruplex dilute solution
39. M2 G-quadruplex 10 wt% PEG8000
40. M2 G-quadruplex 20 wt% ethylene glycol
41. Etch Process Technology for High Density STT-MRAM.
42. High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions.
43. Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer
44. Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM
45. Guiding principles for the fabrication of V-MOSFETs based on a Si emission model
46. Sub 1 V 60 nm Vertical Body Channel MOSFET Based 6T SRAM Array with Wide Noise Margin and Excellent Power Delay Product
47. Highly Efficient and Compact CMOS DC-DC Converter with Novel Transistor Layout of 60 nm Multi-pillar Type Vertical Body Channel MOSFET
48. A Study of Validation of an Evaluation Model of Accurate Thermal Stability Factor for MTJs Using Its Thermal Dependency
49. Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer
50. Design of a variation‐resilient single‐ended non‐volatile six‐input lookup table circuit with a redundant‐magnetic tunnel junction‐based active load for smart Internet‐of‐things applications
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