79 results on '"Fjeldly, Tor A."'
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2. PHYSICS BASED ANALYTICAL MODELING OF NANOSCALE MULTIGATE MOSFETs
3. Physics and Modeling of Poly-, Micro-, and Nano-Si TFTs
4. CMOS RF Modeling, Characterization and Applications
5. Advances in Surface Acoustic Wave Technology, Systems and Applications
6. Advances In Surface Acoustic Wave Technology, Systems And Applications
7. BEYOND SPICE, A REVIEW OF MODERN ANALOG CIRCUIT SIMULATION TECHNIQUES
8. THIN-FILM TRANSISTOR MODELING
9. SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES
10. SIMULATION AND MODELING OF COMPOUND SEMICONDUCTOR DEVICES
11. METAL SEMICONDUCTOR FIELD EFFECT TRANSISTORS
12. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
13. HEMT Modelling
14. Determination of Surface Donor States Properties and Modeling of InAlN/AlN/GaN Heterostructures
15. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures
16. Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states
17. Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]
18. PHYSICS BASED ANALYTICAL MODELING OF NANOSCALE MULTIGATE MOSFETs
19. Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs
20. PREFACE
21. Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
22. Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs pHEMTs
23. A charge-based capacitance model for AlGaAs/GaAs HEMTs
24. Modeling and Simulation Methodology for SOA-Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETs
25. Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures
26. Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors
27. A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation
28. Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques
29. Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures
30. Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs
31. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices
32. A Surface-Potential-Based Compact Model for Study of Non-Linearities in AlGaAs/GaAs HEMTs
33. Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures
34. Modeling of coupling mechanisms and frequency separation in double disk resonators
35. A physics based compact model for drain current in AlGaN/GaN HEMT devices
36. A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices
37. Tunable Lowpass Filter with RF MEMS Capacitance and Transmission Line
38. A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices
39. Impact of Self-Heating in SOI FinFETs on Analog Circuits and Interdie Variability
40. TUNABLE BAND-PASS FILTER USING RF MEMS CAPACITANCE AND TRANSMISSION LINE
41. Compact modeling framework for multigate SOI MOSFETs based on conformal mapping techniques
42. Unified analytical modeling of GAA nanoscale MOSFETs
43. Modelling of quantum ballistic cylindrical nanowire MOSFETs in the subthreshold regime
44. Preface
45. Compact Subthreshold Current Modeling of Short-Channel Nanoscale Double-Gate MOSFET
46. Analytical modeling of Double Gate MOSFET using back gate insulator thickness variation
47. Modeling of quantum mechanical effects in ultra-thin body nanoscale double-gate FinFET
48. Preface
49. 2-D modeling of nanoscale multigate MOSFETs
50. Capacitance modeling of short-channel double-gate MOSFETs
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