21 results on '"Hållstedt, J."'
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2. MetalJet X-ray source for time-resolved and in situ SAXS of macromolecules
3. MetalJet X-ray sources for experiments at non-ambient pressures and temperatures
4. Next-generation MetalJet sources enabling 10 µm high-brightness high-energy beams for high-pressure diffraction application
5. High brightness MetalJet X-ray source for MOFs/COFs structure determinations
6. Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition
7. Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures
8. The influence of Si coverage in a chip on layer profile of selectively grown Si1−xGex layers using RPCVD technique
9. Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs
10. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers
11. Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)
12. Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors
13. High boron incorporation in selective epitaxial growth of SiGe layers
14. Integration of HCl chemical vapour etching and SiGe:B selective epitaxy for source/drain application in MOSFETs
15. Vacancy-impurity pairs in relaxedSi1−xGexlayers studied by positron annihilation spectroscopy
16. A robust spacer gate process for deca-nanometer high-frequency MOSFETs
17. Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition
18. Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1−uGeu film
19. Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers
20. The effect of carbon and germanium on phase transformation of nickel on Si1−x−yGexCy epitaxial layers
21. Growth of high quality epitaxial Si1−x−yGexCy layers by using chemical vapor deposition
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