49 results on '"Ilatikhameneh, Hesameddin"'
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2. Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness
3. Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation
4. Ballisticity Saturation by Unscalable Reflections
5. Effective work-function tuning of TiN/HfO2/SiO2 gate-stack; a density functional tight binding study
6. WSe 2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
7. Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs
8. Complementary Black Phosphorus Tunneling Field-Effect Transistors
9. Universal Swing Factor Approach For Performance Analysis Of Logic Nodes
10. Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs
11. Switching Mechanism and the Scalability of Vertical-TFETs
12. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
13. Sensitivity Challenge of Steep Transistors
14. Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications
15. Universality of Short-Channel Effects on Ultrascaled MOSFET Performance
16. Robust mode space approach for atomistic modeling of realistically large nanowire transistors
17. Understanding contact gating in Schottky barrier transistors from 2D channels
18. Transport in vertically stacked hetero-structures from 2D materials
19. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
20. Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions
21. Gate tunable 2D WSe2 Esaki diode by SiNx doping
22. Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures
23. Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene
24. Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs
25. Design Rules for High Performance Tunnel Transistors From 2-D Materials
26. Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass
27. From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling
28. Simulation and optimization of HEMTs
29. Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots
30. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
31. Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors
32. Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations
33. Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
34. Can Homojunction Tunnel FETs Scale Below 10 nm?
35. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors
36. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials
37. Electrically Tunable Bandgaps in Bilayer MoS2
38. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations
39. Dielectric Engineered Tunnel Field-Effect Transistor
40. 2D tunnel transistors for ultra-low power applications: Promises and challenges
41. Electrically doped 2D material tunnel transistor
42. Engineering the optical transitions of self-assembled quantum dots
43. Electrically doped WTe2 tunnel transistors
44. Quantum dot lab: an online platform for quantum dot simulations
45. Scaling Theory of Electrically Doped 2D Transistors
46. Tunneling: The major issue in ultra-scaled MOSFETs
47. Design Guidelines for Sub-12 nm Nanowire MOSFETs
48. Brillouin zone unfolding method for effective phonon spectra
49. Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors
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