54 results on '"Kushimoto, Maki"'
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2. Demonstration of AlGaN-on-AlN p-n Diodes with Dopant-free Distributed Polarization Doping
3. Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs
4. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
5. Development in AlGaN homojunction tunnel junction deep UV LEDs
6. Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes
7. Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes
8. Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes
9. Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
10. Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
11. Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode
12. Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED
13. Emission uniformity of UVC laser diodes on AlN substrates
14. Visualization of depletion layer in AlGaN homojunction p–n junction
15. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate
16. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
17. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations
18. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
19. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations
20. Development of UV-C laser diodes on AlN substrate
21. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes
22. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
23. Design and characterization of a low-optical-loss UV-C laser diode
24. Impact of high-temperature implantation of Mg ions into GaN
25. Experimental observation of high intrinsic thermal conductivity of AlN
26. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
27. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
28. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements
29. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering
30. A 271.8 nm deep-ultraviolet laser diode for room temperature operation
31. Scalable synthesis of multilayer h-BN on AlN by metalorganic vapor phase epitaxy: nucleation and growth mechanism
32. V-shaped dislocations in a GaN epitaxial layer on GaN substrate
33. Origin of acceptor diffusion into silicon substrate during GaN growth by metal organic chemical vapor deposition
34. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
35. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
36. Corrigendum to “Morphological study of InGaN on GaN substrate by supersaturation” [J. Cryst. Growth 508 (2019) 58–65]
37. Narrow Excitonic Lines in Core–Shell Nanorods With InGaN/GaN Quantum Wells Intersected by Basal Stacking Faults
38. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
39. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
40. Morphological study of InGaN on GaN substrate by supersaturation
41. Detailed study of effects of duration of pre-AlN-growth trimethylaluminum step on morphologies of GaN layers grown on silicon substrate by metal organic chemical vapor deposition
42. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018)
43. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
44. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy
45. m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates
46. Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching
47. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017)
48. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE
49. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
50. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes
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