85 results on '"Millunchick, Joanna"'
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2. Surface Mediated Growth of Dilute Bismides
3. Teaching crystal structures in undergraduate courses: a systematic review from a disciplinary literacy perspective
4. Bismuth-containing III–V semiconductors
5. Contributors
6. The role of college knowledge and proactive behavior on participation in cocurricular activities
7. Mechanisms for Surface Segregation in Compound Semiconductor Thin Films
8. Proactive Behaviors in Engineering: The Role of Pre-College Characteristics, Resources, and Experiences
9. Can Virtual Reality Enhance Learning: A Case Study in Materials Science
10. Interactions between Sb and As on InAs(0 0 1) surfaces
11. Spontaneous nanostructure formation in GaAsBi alloys
12. The atomistic mechanism for Sb segregation and As displacement of Sb in InSb(001) surfaces
13. Shape Evolution of Highly Lattice-Mismatched InN/InGaN Nanowire Heterostructures
14. $1.3~\mu $ m Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit
15. Droplet induced compositional inhomogeneities in GaAsBi
16. Notice of Removal Three-bandgap absolute quantum efficiency in intermediate band solar cells
17. Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells
18. Surface intermixing by atomic scale roughening in Sb-terminated InAs
19. Structural differences between capped GaSb nanostructures grown by Stranski-Krastanov and droplet epitaxy growth modes
20. An InN/InGaN/GaN nanowire array guided wave photodiode on silicon
21. The University of Michigan's M-STEM academies program: Examining the social community of future engineers
22. Predictive modeling of low solubility semiconductor alloys
23. Kinetics of droplet formation and Bi incorporation in GaSbBi alloys
24. High performance red-emitting multiple layer InGaN/GaN quantum dot lasers
25. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon
26. Structural and Optical Properties of Disc-in-Wire InGaN/GaN LEDs
27. Formation and Nature of InGaN Quantum Dots in GaN Nanowires
28. Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)
29. Surface reconstruction stability of Bi/GaSb surfaces
30. Influence of a Bi surfactant on Sb incorporation in InAsSb alloys
31. Red-Emitting ( \(\lambda = 610\)nm) In0.51Ga0.49N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon
32. Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells
33. Indoor photovoltaic energy harvesting for mm-scale systems
34. Phase stability analysis of the InAs/GaAs (001) wetting layer from first principles
35. Surface morphology and Bi incorporation in GaSbBi(As)/GaSb films
36. Incorporation kinetics in mixed anion compound semiconductor alloys
37. Atom probe tomography analysis of different modes of Sb intermixing in GaSb quantum dots and wells
38. Preserving voltage and long wavelength photoresponse in GaSb/GaAs quantum dot solar cells
39. Analyzing pattern retention for multilayer focused ion beam induced quantum dot structures
40. Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory
41. The disintegration of GaSb/GaAs nanostructures upon capping
42. Considerations for surface reconstruction stability prediction on GaAs(001)
43. Surface reconstruction stability and configurational disorder on Bi-terminated GaAs(001)
44. Time-Resolved Two-Pulse Excitation of Quantum Dots Coupled to a Photonic Crystal Cavity in the Purcell Regime
45. Time-resolved Nonlinear Dynamics of Quantum Dots Coupled to a Photonic Crystal Cavity
46. Template-dependent nucleation of metallic droplets
47. Impact of Screencast Technology: Connecting the Perception of Usefulness and the Reality of Performance
48. Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy
49. Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
50. Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface
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