50 results on '"Nag, Manoj"'
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2. Scaling Study of Contact Operation at Constant Current in Oxide Semiconductor Field-Effect Transistors
3. 45.3: Invited Paper: Going Towards High‐Resolution, Uniform AMOLED Displays with a High Brightness Range
4. An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors
5. Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors
6. (Invited) Sub-40mV Sigma VTH Igzo nFETs in 300mm Fab
7. (Invited) Sub-40mV Sigma VTH Igzo nFETs in 300mm Fab
8. Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
9. Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric
10. P‐12: High Performance Dual‐gate Dual‐layer Amorphous Oxide Semiconductors TFTs on PI Foil for Display Application
11. 9‐1: Invited Paper: Metal‐oxide readout electronics based on Indium‐Gallium‐Zinc‐Oxide and Indium‐Tin‐Zinc‐Oxide for in‐panel fingerprint detection application
12. 2-D Smart Surface Object Localization by Flexible 160-nW Monolithic Capacitively Coupled 12-b Identification Tags Based on Metal–Oxide TFTs
13. Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs
14. P-127: Dual-Gate Self-Aligned IGZO TFTs Monolithically Integrated with High-Temperature Bottom Moisture Barrier for Flexible AMOLED
15. Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications
16. Self-Aligned Amorphous Indium-Tin-Zinc-Oxide Thin Film Transistors on Polyimide Foil
17. Characteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control
18. 5-3:Distinguished Paper: Power Saving through State Retention in IGZO-TFT AMOLED Displays for Wearable Applications
19. Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications
20. Conduction mechanism in amorphous InGaZnO thin film transistors
21. Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities
22. Paper No S12.5: Self-Aligned a-IGZO TFTs: Impact of S/D Contacts Formation on Their Negative-Bias-Illumination-Stress (NBIS) Instability
23. P‐6: Impact of Buffer Layers on the Self‐Aligned Top‐Gate a‐IGZO TFT Characteristics
24. 29.4: Flexible AMOLED Display with Integrated Gate Driver Operating at Operation Speed Compatible with 4k2k
25. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors
26. Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors
27. Medium Frequency Physical Vapor Deposited Al2O3and SiO2as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors
28. Integrated Line Driver for Digital Pulse-Width Modulation Driven AMOLED Displays on Flex
29. Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors
30. Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation
31. Circuits and AMOLED display with self-aligned a-IGZO TFTs on polyimide foil
32. Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors
33. An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags
34. Solving the technology barriers in flexible AMOLED displays
35. High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application
36. Comparative study of source-drain contact metals for amorphous InGaZnO thin-film transistors
37. 20.1: Flexible AMOLED Display and Gate-driver with Self-aligned IGZO TFT on Plastic Foil
38. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
39. 30.2 Digital PWM-driven AMOLED display on flex reducing static power consumption
40. High performance a‐IGZO thin‐film transistors with mf‐PVD SiO2 as an etch‐stop‐layer
41. Integrated UHF a-IGZO energy harvester for passive RFID tags
42. Gigahertz Operation of a-IGZO Schottky Diodes
43. Novel back‐channel‐etch process flow based a‐IGZO TFTs for circuit and display applications on PEN foil
44. Paper No 19.3: Back‐Channel‐Etch Process Flow for a‐IGZO TFTs
45. Single‐source dual‐layer amorphous IGZO thin‐film transistors for display and circuit applications
46. UHF IGZO Schottky diode
47. High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts
48. A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz
49. Low-temperature and scalable complementary thin-film technology based on solution-processed metal oxide n-TFTs and pentacene p-TFTs
50. Trench formation in <110> silicon for millimeter-wave switching device
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