52 results on '"Panayiotatos, Y."'
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2. Atomistic Simulations of the Defect Chemistry and Self-Diffusion of Li-ion in LiAlO2
3. Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results
4. Tin diffusion in germanium: a thermodynamic approach
5. Structural and optical properties of the recently synthesized (Zr3−x Ti x )AlC2 MAX phases
6. Gold and silver diffusion in germanium: a thermodynamic approach
7. Joining of ceramic matrix composites to high temperature ceramics for thermal protection systems
8. Copper diffusion in germanium: connecting point defect parameters with bulk properties
9. Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
10. The effect of Se and Se/Al passivation on the oxidation of Ge
11. Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry
12. The role of La surface chemistry in the passivation of Ge
13. Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition
14. Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
15. Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium
16. Different nanostructures identified in boron nitride thin films grown on Si (100) by rf magnetron sputtering
17. Metal-oxide-semiconductor devices on p-type Ge with La[sub 2]O[sub 3] and ZrO[sub 2]/La[sub 2]O[sub 3] as gate dielectric and the effect of postmetallization anneal
18. Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
19. Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks
20. Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
21. Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
22. Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric
23. Epitaxial germanium-on-insulator grown on (001) Si
24. Total Dose Response of Ge MOS Capacitors With HfO$_{2}$/Dy$_{2}$O$_{3}$ Gate Stacks
25. Germanium MOSFETs With $\hbox{CeO}_{2}/\hbox{HfO}_{2}/ \hbox{TiN}$ Gate Stacks
26. Interface engineering for Ge metal-oxide–semiconductor devices
27. Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium
28. Current Challenges in Ge MOS Technology
29. Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
30. Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators
31. Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
32. Electrical Properties of Atomic-Beam Deposited GeO[sub 1−x]N[sub x]∕HfO[sub 2] Gate Stacks on Ge
33. Effects of non-depositing energetic species during the growth of boron nitride and amorphous carbon thin films by sputter deposition
34. Nanoindentation studies of multilayer amorphous carbon films
35. X-ray diffuse scattering investigation of thin films
36. Homogeneous and amorphous sputtered sp3-bonded BN films at RT: a stress, spectroscopic ellipsometry and XPS study
37. A quantitative study of the nano-scratch behavior of boron and carbon nitride films
38. Raman and photoluminescence study of magnetron sputtered amorphous carbon films
39. High-field transport and noise properties of sputter-deposited amorphous carbon silicon heterojunctions
40. The effects of interface and bulk defects on the electrical performance of amorphous carbon/silicon heterojunctions
41. On the properties and functionality of ultra-thin diamond related protective coatings used in optical systems
42. Spectroscopic ellipsometry studies on BN films from IR to vacuum UV energy region
43. Variation of nitrogen incorporation and bonding configuration of carbon nitride films studied by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopic ellipsometry
44. Mechanical performance and growth characteristics of boron nitride films with respect to their optical, compositional properties and density
45. Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure
46. Microstructure and its effect on the conductivity of magnetron sputtered carbon thin films
47. Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature
48. A study on the bonding structure and mechanical properties of magnetron sputtered CNx thin films
49. Structural, electrical, and low-frequency-noise properties of amorphous-carbon–silicon heterojunctions
50. Noise characterization of sputtered amorphous carbon films
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