85 results on '"Sadi, Toufik"'
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2. Electro-Optical Coupling in Double Diode Structures
3. Microscopic KMC Modeling of Oxide RRAMs
4. Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator
5. Prospects and requirements for thermophotonic waste heat energy harvesting
6. Interplay of Photons and Charge Carriers in Thin-Film Devices
7. Applied electromagnetic optics simulations for nanophotonics
8. Comparison of absorption simulation in semiconductor nanowire and nanocone arrays with the Fourier modal method, the finite element method, and the finite-difference time-domain method
9. Interdigitated back‐contact double‐heterojunction GaInP/GaAs solar cells
10. Improving the Efficiency of GaInP/GaAs Light Emitters Using Surface Passivation
11. Geometry Tailoring of Emission from Semiconductor Nanowires and Nanocones
12. Thermophotonic cooling with light-emitting diodes
13. Current Spreading in Back-Contacted GaInP/GaAs Light-Emitting Diodes
14. A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory
15. On the temperature dependence of the efficiency of electroluminescence
16. Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism
17. Advanced Simulation of RRAM Memory Cells
18. Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides
19. Multiscale Modeling of Charge Trapping in Molecule Based Flash Memories
20. Efficient Fully-Coupled Electro-Optical Simulation Framework for Large-Area Planar Device
21. Absorption modeling with FMM, FEM and FDT
22. Effect of interface recombination on the efficiency of intracavity double diode structures
23. Electroluminescent Cooling in III–V Intracavity Diodes: Efficiency Bottlenecks
24. Investigation of Pt-Salt-Doped-Standalone- Multiwall Carbon Nanotubes for On-Chip Interconnect Applications
25. Towards fully self-consistent optoelectronic simulation of planar devices
26. Temperature dependence of thermophotonic energy transfer in intracavity structures
27. Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping
28. Observation of local electroluminescent cooling and identifying the remaining challenges
29. Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
30. Simulation of photon transport in resonant double-diode structures
31. Thermophotonic cooling in GaAs based light emitters
32. Electroluminescent Cooling in III–V Intracavity Diodes: Practical Requirements
33. Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
34. Comparison of FMM, FEM and FDTD for Absorption Modeling of Nanostructured Solar Cells and Photodetectors
35. Electroluminescent cooling using double diode structures
36. Electrically-injected III–V diodes for large-area optoelectronics
37. Interference-exact radiative transfer simulations: intracavity transport effects
38. Nanowire FETs
39. Impact of the Effective Mass on the Mobility in Si Nanowire Transistors
40. Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study
41. Stochastic analysis of surface roughness models in quantum wires
42. Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling
43. Investigation of resistance switching in SiOxRRAM cells using a 3D multi-scale kinetic Monte Carlo simulator
44. Electroluminescent cooling in intracavity light emitters: modeling and experiments
45. Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs
46. The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations
47. Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology
48. Modeling of charge and photon transport in coupled intracavity light emitters
49. Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit
50. On the Monte Carlo Description of Hot Carrier Effects and Device Characteristics of III-N LEDs
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