77 results on '"Shigekawa, N."'
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2. Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting Zn-Based Nanoparticles with Mn doped
3. Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells
4. A polyimide film/aluminum foil junction by modified surface activated bonding
5. Fabrication of Si//Patterned Metal Layer/Si Junctions for Hybrid Multijunction Solar Cells with Improved Bonding Interface Properties
6. Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature
7. Penetration Depth of Effects of Irradiation of Ar Fast Atom Beams in n-Si Surfaces
8. Al-foil-based low-loss coplanar waveguides directly bonded to sapphire substrates
9. Impacts of annealing on interfaces of Al foil/Si junctions by using surface activated bonding
10. Analysis of the influence of interface charges on the electrical characteristics of GaAs/GaN junctions
11. Electrical properties of Al-Foil/4H-SiC Schottky junctions fabricated by surface-activated bonding
12. Determination of Band Structure at GaAs/4H-SiC Heterojunctions
13. Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding
14. Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate
15. Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment
16. Electrical characteristics of Al foil/Si junctions by surface activated bonding method
17. Effects of layered CdTe nano particles on Si solar cells
18. Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions
19. Effects of Ar beam irradiation on Si-based Schottky contacts
20. Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC Junctions by Surface Activated Bonding
21. Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy
22. Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding
23. 4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding
24. Electrical characterization of GaAs/GaAs bonding interfaces
25. Interface characteristics of Si/Si junctions by using surface-activated bonding
26. Fabrication and characterization of Si-based bipolar transistor structures using low-temperature bonding
27. Electrical properties of n+-Si/n-GaN junctions by room temperature bonding
28. Growth temperature dependent critical thickness for phase separation in thick (~1 μm) In Ga1−N (x=0.2–0.4)
29. Thick (~1 μm) p-type InxGa1-xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C)
30. Effects of interface state charges on the electrical properties of Si/SiC heterojunctions
31. Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding for Hybrid Tandem Cells
32. Annealing temperature dependence of SAB based Si/Si junctions
33. Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding
34. Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells
35. Improvement in elecrical properties in SAB-based n+-Si/n-4H-SiC junctions by annealing
36. Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells
37. Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding
38. Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC heterojunctions
39. Electrical properties of Si/Si interfaces by using surface-activated bonding
40. Surface-Activated-Bonding Based InGaP-on-Si Double Junction Cells
41. Type II band lineup in SAB-Based GaAs/Si heterojunctions
42. Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions
43. MOVPE growth of InxGa1-xN (x∼0.5) on Si(111) substrates with a pn junction on the surface
44. Optimization of AlGaN‐based spacer layer for InAlN/GaN interfaces
45. MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
46. An inverted InAlAs/InGaAs avalanche photodiode with low-high-low field profile
47. Investigation of polarization‐induced electric field in ultrathin InAlN layers on GaN by X‐ray photoelectron spectroscopy
48. Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures
49. Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy
50. Continuous-wave terahertz spectroscopic imaging at over 1 THz for pharmaceutical applications
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