77 results on '"Tabuchi, Masao"'
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2. Nanoclusters in stacking faults in Mg-Y-Zn alloys examined by small-angle X-ray scattering and Extended X-ray Absorption Fine Structure analysis
3. Spectroscopic studies for identifying the chemical states of the periostracum of the Corbicula species in Lake Biwa
4. Characterization of the Iron Metallome of Corbicula Species in Lake Biwa
5. Enhanced oxygen reduction activity of size-selected platinum subnanocluster catalysts: Ptn (n = 3–9)
6. Controllable CaF2 Nanosized Stripe Arrays on Si(001) Studied by X-ray and Electron Diffraction
7. Correlation between crystal structure and magnetism in PLD grown epitaxial films of ε-Fe2O3 on GaN
8. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency
9. Modified linear combination fitting for large-area two-dimensional chemical state mapping
10. AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode
11. Current Status of BL6N1 of AichiSR: a Tender X-ray Beamline for XAFS and Photoemission Spectroscopy
12. Chemical State Analysis of the Periostracum in the Corbicula Clam Hatched in Lake Biwa
13. Raman scattering of ultrathin InAs layers inserted in GaAs
14. Enhanced oxygen reduction activity of platinum subnanocluster catalysts through charge redistribution
15. Mesoscopic Structure in Lattice-Mismatched Heteroepitaxial Interface Layers
16. COMPUTER SIMULATION OF STRAIN RELAXATION MECHANISM OF MBE GROWN LATTICE MISMATCHED InGaAs/GaAs LAYERS
17. Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties
18. 1S-A1-2Innovate Electron Beam by GaN Semiconductor Photocathodes Conducive to Single Shot Imaging
19. Electron Beam Sources using InGaN Semiconductor Photocathodes for Single-shot Imaging Electron Microscope
20. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity
21. Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy
22. Translocation of 133Cs administered to Cryptomeria japonica wood
23. Protein crystallography beamline BL2S1 at the Aichi synchrotron
24. (Invited) Characterization of Semiconductor Materials Using Syncrotron Radiation, XAFS and X-Ray CTR Scattering
25. Anomalous structural behavior in the metamagnetic transition of FeRh thin films from a local viewpoint
26. Nanoclusters first: a hierarchical phase transformation in a novel Mg alloy
27. Corrigendum to: Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy [J. Cryst. Growth 407 (2014) 68–73]
28. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy
29. Photoemission lifetime of a negative electron affinity gallium nitride photocathode
30. Mean transverse energy and response time measurements of GaInP based photocathodes
31. In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
32. X‐ray investigations of GaInN single quantum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy
33. In situ X-ray Reflectivity Measurements on Annealed InxGa1-xN Epilayer Grown by Metalorganic Vapor Phase Epitaxy
34. In situ X-ray measurements of MOVPE growth of InxGa1−xN single quantum wells
35. Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films
36. X-ray characterization of GaN and related materials at growth temperatures–system design and measurements
37. Composition fluctuations in InP/GaInAs/InP heterostructures –X-ray CTR scattering and cross-sectional STM measurements
38. Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method
39. Initial Stages of High-Temperature CaF2/Si(001) Epitaxial Growth Studied by Surface X-Ray Diffraction
40. Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures
41. X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE
42. Ga and As composition profiles in InP/GaInAs/InP heterostructures—x-ray CTR scattering and cross-sectional STM measurements
43. Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator
44. Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
45. Effect ofLn-Site Disorder onTcof Oxypnictide SuperconductorLnFeAsO1-xFx(Ln=Nd, Ce–Gd, and La–Dy)
46. High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes
47. Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator
48. Study on accumulation process of As atoms in InP/GaInAs/InP hetero-structures
49. Superlattice Photocathode with High Brightness and Long NEA-Surface Lifetime
50. The importance to reveal buried interfaces in the semiconductor heterostructure devices
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