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Light-harvesting devices made from PbS quantum dot (QD) absorbers are one of the many promising technologies of third-generation photovoltaics. Their simple, solution-based fabrication together with a highly tunable and broad light absorption makes their application in newly developed solar cells particularly promising. In order to yield devices with reduced voltage and current losses, PbS QDs need to have strategically passivated surfaces, most commonly achieved through lead iodide and bromide passivation. The interdot spacing is then predominantly filled with residual amorphous lead halide species that remain from the ligand exchange, thus hindering efficient charge transport and reducing device stability. Herein, we demonstrate that a post-treatment by iodide based 2-phenylethlyammonium salts (X-PEAI) and intermediate 2D perovskite formation can be used to manage the lead halide excess in the PbS QD active layer. This treatment results in improved device performance and increased shelf-life stability, demonstrating the importance of interdot spacing management in PbS quantum dot photovoltaics.

Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

Lead sulfide (PbS) quantum dot (QD) photovoltaics have reached impressive efficiencies of 12%, making them particularly promising for future applications. Like many other types of emerging photovoltaic devices, their environmental instability remains the Achilles heel of this technology. In this work, we demonstrate that the degradation processes in PbS QDs which are exposed to oxygenated environments are tightly related to the choice of ligands, rather than their intrinsic properties. In particular, we demonstrate that while 1,2-ethanedithiol (EDT) ligands result in significant oxidation of PbS, lead iodide/lead bromide (PbX2) coated PbS QDs show no signs of oxidation or degradation. Consequently, since the former is ubiquitously used as a hole extraction layer in QD solar cells, it is predominantly responsible for the device performance evolution. The oxidation of EDT-PbS QDs results in a significantly reduced effective QD size, which triggers two competing processes: improved energetic alignment that enhances electron blocking, but reduced charge transport through the layer. At early times, the former process dominates, resulting in the commonly reported, but so far not fully explained initial increase in performance, while the latter governs the onset of degradation and deterioration of the photovoltaic performance. Our work highlights that the stability of PbS quantum dot solar cells can be significantly enhanced by an appropriate choice of ligands for all device components.

Solution-processed quantum dots (QDs) have a high potential for fabricating low cost, flexible and large-scale solar energy harvesting devices. It has recently been demonstrated that hybrid devices employing a single monovalent cation perovskite solution for PbS QD surface passivation exhibit enhanced photovoltaic performance when compared to standard ligand passivation. Herein we demonstrate that the use of a triple cation Cs0.05(MA0.17FA0.83)0.95Pb(I0.9Br0.1)3 perovskite composition for surface passivation of the quantum dots results in highly efficient solar cells, which maintain 96 % of their initial performance after 1200h shelf storage. We confirm perovskite shell formation around the PbS nanocrystals by a range of spectroscopic techniques as well as high-resolution transmission electron microscopy. We find that the triple cation shell results in a favorable energetic alignment to the core of the dot, resulting in reduced recombination due to charge confinement without limiting transport in the active layer. Consequently, photovoltaic devices fabricated via a single-step film deposition reached a maximum AM1.5G power conversion efficiency of 11.3 % surpassing most previous reports of PbS solar cells employing perovskite passivation.

Four {\pi}-extended phosphoniumfluorene electrolytes ({\pi}-PFEs) are introduced as hole-blocking layers (HBL) in inverted architecture planar perovskite solar cells (PVSCs) with the structure of ITO/PEDOT:PSS/MAPbI3/PCBM/HBL/Ag. The deep-lying highest occupied molecular orbital (HOMO) energy level of the {\pi}-PFEs effectively blocks holes, decreasing contact recombination. We demonstrate that the incorporation of {\pi}-PFEs introduces a dipole moment at the PCBM/Ag interface, resulting in a significant enhancement of the built-in potential of the device. This enhancement results in an increase in the open-circuit voltage of the device by up to 120 mV, when compared to the commonly used bathocuproine HBL. The results are confirmed both experimentally and by numerical simulation. Our work demonstrates that interfacial engineering of the transport layer/contact interface by small molecule electrolytes is a promising route to suppress non-radiative recombination in perovskite devices and compensate for a non-ideal energetic alignment at the hole-transport layer/perovskite interface.