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Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga$_2$O$_3$ an interesting material for multiple applications, while In-incorporation into any polymorphs of Ga$_2$O$_3$ allows to lower their bandgap. In this work, we provide a guideline to achieve single phase $\kappa$-, $\beta$-Ga$_2$O$_3$ as well as their (In$_x$Ga$_{1-x}$)$_2$O$_3$ alloys up to x = 0.14 and x = 0.17 respectively, using In-mediated metal exchange catalysis in plasma assisted molecular beam epitaxy (MEXCAT-MBE). The polymorph transition from $\kappa$ to $\beta$ is also addressed, highlighting the fundamental role played by the thermal stability of the $\kappa$-Ga$_2$O$_3$. Additionally, we also demonstrate the possibility to grow ($\bar{2}$01) $\beta$-Ga$_2$O$_3$ on top of $\alpha$-Al$_2$O$_3$ (0001) at temperatures at least 100 {\deg}C above those achievable with conventional non-catalyzed MBE, opening the road for increased crystal quality in heteroepitaxy. The role of the substrate, as well as strain and structural defects in the growth of $\kappa$-Ga$_2$O$_3$ is also investigated by growing simultaneously on three different materials: (i) $\alpha$-Al$_2$O$_3$ (0001), (ii) 20 nm of ($\bar{2}$01) $\beta$-Ga$_2$O$_3$ on $\alpha$-Al$_2$O$_3$ (0001) and (iii) ($\bar{2}$01) $\beta$-Ga$_2$O$_3$ single crystal., Comment: Main text: 7 pages, 4 figures; Supplementary: 6 pages, 9 figures

The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source material in a conventional effusion cell. Line-of-sight quadrupole mass spectrometry of the direct SiO-flux ($\Phi_{SiO}$) from the source at different temperatures ($T_{SiO}$) confirmed SiO molecules to sublime with an activation energy of 3.3eV. The $T_{SiO}$-dependent $\Phi_{SiO}$ was measured in vacuum before and after subjecting the source material to an O$_{2}$-background of $10^{-5}$ mbar (typical oxide MBE regime). The absence of a significant $\Phi_{SiO}$ difference indicates negligible source oxidation in molecular O$_{2}$. Mounted in an oxygen plasma-assisted MBE, Si-doped $\beta$-Ga2O3 layers were grown using this source. The $\Phi_{SiO}$ at the substrate was evaluated [from 2.9x10$^{9}$ cm$^{-2}$s$^{-1}$ ($T_{SiO}$=700{\deg}C) to 5.5x10$^{13}$ cm$^{-2}$s$^{-1}$ (T$_{SiO}$=1000{\deg}C)] and Si-concentration in the $\beta$-Ga2O3 layers measured by secondary ion mass spectrometry highlighting unprecedented control of continuous Si-doping for oxide MBE, i.e., $N_{Si}$ from 4x10$^{17}$ cm$^{-3}$ ($T_{SiO}$=700{\deg}C) up to 1.7x10$^{20}$ cm$^{-3}$ ($T_{SiO}$=900{\deg}C). For a homoepitaxial $\beta$-Ga2O3 layer an Hall charge carrier concentration of 3x10$^{19}$ cm$^{-3}$ in line with the provided $\Phi_{SiO}$ ($T_{SiO}$=800{\deg}C) is demonstrated. No SiO-incorporation difference was found between $\beta$-Ga2O3(010) layers homoepitaxially grown at 750{\deg}C and $\beta$-Ga2O3(-201) layers heteroepitaxially grown at 550{\deg}C. The presence of activated oxygen (plasma) resulted in partial source oxidation and related decrease of doping concentration (particularly at $T_{SiO}$<800{\deg}C) which has been tentatively explained with a simple model. Degassing the source at 1100{\deg}C reverted the oxidation.

Raman spectroscopy is utilized to study the magnetic characteristics of heteroepitaxial NiO thin films grown by plasma-assisted molecular beam epitaxy on MgO(100) substrates. For the determination of the N\'eel temperature, we demonstrate a reliable approach by analyzing the temperature dependence of the Raman peak originating from second-order scattering by magnons. The antiferromagnetic coupling strength is found to be strongly influenced by the growth conditions. The low-temperature magnon frequency and the N\'eel temperature are demonstrated to depend on the biaxial lattice strain and the degree of structural disorder which is dominated by point defects.

The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab initio} many-body calculations with experimental hard X-ray photoemission spectra of the Sn 4$d$ states shows that strong satellites are produced by coupling of the Sn core hole to the plasma oscillations of the free electrons introduced by doping. Within the same theoretical framework, spectral changes of the valence band spectra are also related to dynamical screening effects. These results demonstrate that, for the interpretation of electron correlation features in the core level photoelectron spectra of such narrow-band materials, going beyond the homogeneous electron gas electron-plasmon coupling model is essential., Comment: 6 PAGES, 4 FIGURES