1. Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization
- Author
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Huang, Li, Kong, Xianghua, Zheng, Qi, Xing, Yuqing, Chen, Hui, Li, Yan, Hu, Zhixin, Zhu, Shiyu, Qiao, Jingsi, Zhang, Yu-Yang, Cheng, Haixia, Cheng, Zhihai, Qiu, Xianggang, Liu, Enke, Lei, Hechang, Lin, Xiao, Wang, Ziqiang, Yang, Haitao, Ji, Wei, and Gao, Hong-Jun
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface, which are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome lattice materials using conventional surface deposition techniques.
- Published
- 2023
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