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Recent increasing interest in strain balanced Type-II superlattices material causing close attention from industry. Tremendous investment was drawn toward establishing strain balanced superlattice (SLS) as new alternative for infrared photodetectors across the broad range of infrared spectrum. In recent years, SLS material system has shown capability in particular specifications to compete with mature and standard mercury cadmium telluride for mid-wavelength and long-wavelength infrared detection. It has been great interest in SLS material system for applications aligned with the standard of third generation of infrared detectors. In that level, photodetectors with multi-color detection capabilities based on SLS material system are highly desired. In this presentation, some recent progress in three color infrared photodetectors based on SLS material system will be presented.

Strained layer superlattice (SLS) material system is a dynamic and relatively new material for infrared detection. Large format, small-pitch and low-cost focal plane arrays (FPAs) with more pixels are in demand for different applications. For the current SLS based FPAs mesa etching are used to define the pixels. For those SLS based FPAs with scaled pixel size making the mesa structures can be challenging due to the need for deep etch, and then passivation process. One of the possible solutions to address this issue is to consider a planar structure and avoiding the mesa-isolation etching or complex surface treatment/ passivation process. In this work, the recent progress on planar SLS infrared photodetectors using ion-implantation for device isolation is reviewed. In this method of fabrication, ion implantation was applied from the top to bombardment the surface for device isolation, like mesa-isolation step in device fabrication., Comment: 11 pages, 5 figures, 2 tables

We demonstrate a low noise short wavelength infrared (SWIR) Sb based type II superlattice (T2SL) avalanche photodiodes (APD). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on GaSb substrate. At room temperature, the device exhibits a 50 % cut-off wavelength of 1.74 micron. The device revealed to have electron dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give better prospect of the performance of the device. Low excess noise, as characterized by the carrier ionization ratio of ~ 0.07, has been achieved., Comment: 11 pages , 6 figures