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Molybdenum disulfide (MoS$_2$) is a high-potential material for nanoelectronic applications, especially when thinned to a few layers. Liquid phase exfoliation enables large-scale fabrication of thin films comprising single- and few-layer flakes of MoS$_2$ or other transition-metal dichalcogenides (TMDCs), exhibiting variations in flake size, geometry, edge terminations, and overlapping areas. Electronic conductivity of such films is thus determined by two contributions: the intraflake conductivity, reflecting the value of each single layer, and charge transport across these overlapping flakes. Employing first-principles simulations, we investigate the influence of various edge terminations and of the overlap between flakes on the charge transport in MoS$_2$ film models. We identify characteristic electronic edge states originating from the edge atoms and their chemical environment, which resemble donor and acceptor states of doped semiconductors. This makes either electrons or holes to majority carriers and enables selective control over the dominant charge carrier type (n-type or p-type). Compared to pristine nanosheets, overlapping flakes exhibit lower overall conductance. In the best performing hexagonal flakes occurring in Mo-rich environments, the conductance is reduced by 20% compared to the pristine layer, while the drop by 40%, and 50% is predicted for truncated triangular, and triangular flakes, respectively in S-rich environments. An overlap of 6.5 nm is sufficient to achieve the highest possible interflake conductance. These findings allow for a rational optimization of experimental conditions for the preparation of MoS$_2$ and other TMDC semiconducting thin films.

Single layers of transition-metal thiophosphates (2D-TMPS$_{3}$) van der Waals magnets are an ideal platform for studying antiferromagnetic interactions in two dimensions. However, the magnetic coupling mechanism between two or more individual layers of these materials remains mostly unexplored. This study presents a density-functional based analysis and analytical models to describe the magnetic configurations of FePS$_{3}$ and NiPS$_{3}$ stacked bilayers. We explore the interplay between magnetic configurations and stacking shift, therefore identifying the mechanisms that result in either ferromagnetic or antiferromagnetic coupling between layers. Our findings indicate that the stacking with the lowest energy is metal-dependent, and the interlayer magnetic configuration (ferromagnetic or antiferromagnetic) varies based on the stacking type and the metal involved. Using an Ising-Hamiltonian model and a tight-binding model based on Wannier functions, we show that interlayer exchange interactions must be considered up to the third nearest neighbor and to elucidate the superexchange mechanism for the NiPS$_{3}$ system.

Non-planar aromatic molecules are interesting systems for organic electronics and optoelectronics applications due to their high stability and electronic properties. By using scanning tunneling microscopy and spectroscopy, we investigated thianthrene-based molecules adsorbed on Au(111), which are non-planar in the gas phase and the bulk solid state. Varying the molecular coverage leads to the formation of two different kinds of self-assembled structures: close-packed islands and quasi one-dimensional chains. We found that the molecules are non-planar within the close-packed islands, while the configuration is planar in the molecular chain and for single adsorbed molecules. Using vertical tip manipulation to isolate a molecule from the island, we demonstrate the conversion of a non-planar molecule to its planar configuration. We discuss the two different geometries and their electronic properties with the support of density functional theory calculations.

With advanced synthetic techniques, a wide variety of well-defined graphene nano-ribbons (GNRs) can be produced with atomic precision. Hence, finding the relation between their structures and properties becomes important for the rational design of GNRs. In this work, we explore the complete chemical space of gulf-edged zigzag graphene nanoribbons (ZGNR-Gs), a subclass of zigzag GNRs in which the zigzag edges miss carbon atoms in a regular sequence. We demonstrate that the electronic properties of ZGNR-Gs depend on four structural parameters: ribbon width, gulf edge size, unit length, and gulf offset. Using tight-binding calculations and the Hubbard model, we find that all ZGNR-Gs are semiconductors with varying band gaps; there are no metals in this class of materials. Notably, when spin polarization is considered, most ZGNR-Gs exhibit antiferromagnetic behavior, with the spin moments and spin-induced band gap opening being stabilized by longer zigzag segments at the edges. Furthermore, we provide simple empirical rules that describe the Z2 topological invariant based on the aforementioned structural parameters. By analyzing the full chemical space of ZGNR-Gs, we offer insights into the design of GNRs with desired electronic, magnetic, and topological properties for nanoelectronic applications.

The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying the (opto-)electronic properties of nanodevices. Graphene, with its remarkable opto-electronic properties, is an ideal candidate for such applications. Further candidates are 2D polymers, crystalline polymeric materials with customizable structure and electronic properties that can be synthesized in all mathematically possible Bravais lattices. In this study, we investigated the optoelectronic properties of a heterostructure created by pristine graphene and a rectangular 2D polyimide (2DPI) film. This imprints a new superlattice on graphene in conjunction with a direct influence on its electronic properties. Theoretical and experimental analyses reveal that interlayer charge exchange between the 2D polymer and graphene induces hole doping in the graphene layer. We have also observed that the properties of the heterostructure are dependent on the substrate used in experiments, likely due to the porous character of the 2DPI allowing direct interaction of graphene with the support. These findings highlight the unique ability to tailor functionalities in 2D polymers-based heterostructures, allowing the development of optoelectronic devices with precisely engineered properties and stimulating further exploration of the diverse phenomena accessible through tailored designs of the 2D polymers.

Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for logic devices. Herein, we design a new D2h-geometric ligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP), and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with a rhombohedral pore geometry after coordination with copper. The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The resultant Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOFs., Comment: 11 pages 5 figures

We computationally demonstrate Stoner-ferromagnetic half-metals and antiferromagnetic Mott-Hubbard insulators in metal-free 2D polymers. Coupling radicaloid (hetero)triangulene monomers via strong covalent bonds preserving the in-plane conjugation of the electronic {\pi} system yields 2D crystals with long-range magnetic order and magnetic couplings above the Landauer limit. Dual-site honeycomb lattices produce both flat bands and Dirac cones. Depending on the monomers, electron correlations lead to either a bandgap at the Dirac points for antiferromagnetic Mott insulators, or Stoner ferromagnetism with both spin-polarized Dirac cones and flat bands at the Fermi level. These results pioneer a new type of Stoner and Mott-Hubbard magnetism emerging in the electronic pi system of crystalline conjugated 2D polymers.

Controlling the magnetic state of two-dimensional (2D) materials is crucial for spintronic applications. By employing data-mining and autonomous density functional theory calculations, we demonstrate the switching of magnetic properties of 2D non-van der Waals materials upon hydrogen passivation. The magnetic configurations are tuned to states with flipped and enhanced moments. For 2D CdTiO$_3$ - a nonmagnetic compound in the pristine case - we observe an onset of ferromagnetism upon hydrogenation. Further investigation of the magnetization density of the pristine and passivated systems provides a detailed analysis of modified local spin symmetries and the emergence of ferromagnetism. Our results indicate that selective surface passivation is a powerful tool for tailoring magnetic properties of nanomaterials such as non-vdW 2D compounds., Comment: 12 pages, 10 figures

An ideal proton exchange membrane should only permeate protons and be leak tight for fuels. Graphene is impermeable to water and poorly conducting to protons. Here, we chemically functionalized monolayer graphene to install sulfophenylated sp3 dislocations by diazotization. Selective to protons, transmembrane areal conductances are up to ~50 S/cm2, which is ~5000 fold higher than in pristine graphene. Mounted in a direct methanol fuel cell, sulfophenylated graphene resulted in power densities up to 1.6 W/mg or 123 mW/cm under standard cell operation (60 C), a value ~two-fold larger than micron-thick films of Nafion 117. The combination of sp3 dislocations and polar groups, therefore, allow the creation of hydrophilic ion paths through graphene and unveils a novel route to rationalize transmembrane hydron transport through 2D materials.

Two dimensional van der Waals heterostructures (2D are of significant interest due to their intriguing physical properties that are critically defined by the constituent monolayers and their interlayer coupling . However, typical inorganic 2 D vdWhs fall into the weakly coupled region, limiting efficient interfacial charge flow crucial for developing high performance quantum opto electronics. Here, we demonstrate strong interlayer coupling in Cu3 BHT (BHT = benzenehexathiol) graphene vdWhs an organic inorganic bilayer characterized by prominent interlayer charge transfer Monolayer Cu3 BHT with a Kagome lattice is synthesized on the water surface and then coupled with graphene to produce a cm2 scale 2D vdWh. Spectroscopic and electrical studies, along with theoretical calculation s show significant hole transfer from monolayer Cu3 BHT to graphene upon contact , being characteristic fingerprints for strong interlayer coupling This study unveils the great potential of integrating highly pi-conjugated 2D coordination polymers (2DCPs) into 2D vdWhs to explor e intriguing physical phenomena.

Manipulating the interlayer twist angle is a powerful tool to tailor the properties of layered two-dimensional crystals. The twist angle has a determinant impact on these systems' atomistic structure and electronic properties. This includes the corrugation of individual layers, formation of stacking domains and other structural elements, and electronic structure changes due to the atomic reconstruction and superlattice effects. However, how these properties change with the twist angle (ta) is not yet well understood. Here, we monitor the change of twisted bilayer MoS2 characteristics as function of ta. We identify distinct structural regimes, with particular structural and electronic properties. We employ a hierarchical approach ranging from a reactive force field through the density-functional-based tight-binding approach and density-functional theory. To obtain a comprehensive overview, we analyzed a large number of twisted bilayers with twist angles in the range 0.2-59.6deg. Some systems include up to half a million atoms, making structure optimization and electronic property calculation challenging. For 13

PtSe$_2$ is a promising 2D material for nanoelectromechanical sensing and photodetection in the infrared regime. One of its most compelling features is the facile synthesis at temperatures below 500 {\deg}C, which is compatible with current back-end-of-line semiconductor processing. However, this process generates polycrystalline thin films with nanoflake-like domains of 5 to 100 nm size. To investigate the lateral quantum confinement effect in this size regime, we train a deep neural network to obtain an interatomic potential at DFT accuracy and use that to model ribbons, surfaces, nanoflakes, and nanoplatelets of PtSe$_2$ with lateral widths between 5 to 15 nm. We determine which edge terminations are the most stable and find evidence that the electrical conductivity is localized on the edges for lateral sizes below 10 nm. This suggests that the transport channels in thin films of PtSe$_2$ might be dominated by networks of edges, instead of transport through the layers themselves.

In cove-edged zigzag graphene nanoribbons (ZGNR-C), one terminal CH group per length unit is removed on each zigzag edge, forming a regular pattern of coves which controls their electronic structure. Based on three structural parameters that unambiguously characterize the atomistic structure of ZGNR-C, we present a scheme that classifies their electronic state, i.e., if they are metallic, topological insulators or trivial semiconductors, for all possible widths N, unit lengths a and cove position offsets at both edges b, thus showing the direct structure-electronic structure relation. We further present an empirical formula to estimate the band gap of the semiconducting ribbons from N, a, and b. Finally, we identify all geometrically possible ribbon terminations and provide rules to construct ZGNR-C with well-defined electronic structure.

PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device.

Current research efforts on single-atom catalysts (SACs) exclusively focus on nonmetal or transition-metal atoms as active centers, while employing main-group metal elements is seemingly excluded because their delocalized s/p-bands are prone to yield a broadened resonance for the interaction with adsorbates. Here, we use high-throughput first-principles calculations to investigate the possible incorporation of Mg, Al and Ga to form graphene-based SACs for NO reduction reaction (NORR) toward NH3. 51 SAC candidates with different metal coordination environment have been computationally screened employing a rationally designed four-step process, yielding six SACs with high catalytic activity and NORR selectivity. The performance is rationalized by the modulation of s/p-band filling of the main-group metals. The adsorption free energy of NO is identified as efficient descriptor for such SACs. The underlying physical mechanism is revealed and generally applicable to other main group metal SACs. These fundamental insights extend SACs to main-group metal elements.

Two-dimensional (2D) materials may exhibit intriguing band structure features (e.g., Dirac points), that lay far away from the Fermi level. They are, thus, not usable in applications. The semiconducting 2D material PC6 has two Dirac cones above and below the Fermi level. Therefore, it is an ideal playground to demonstrate chemical functionalization methods for shifting the Fermi level in order to access interesting band structure features. PC6 is based on the sqrt(7) x sqrt(7)R19.1deg super cell of graphene with two carbon atoms per unit cell substituted by phosphorous. It is demonstrated how substitution with other heteroatoms that contain a different number of valence electrons, the Dirac points can be accessed. Alternatively, hydrogen atoms can be used as adatoms at the heteroatom sites. This increases electron filling and shifts the Fermi level upwards.

The electronic properties of $\pi$-conjugated two-dimensional (2D) polymers near the Fermi level are determined by structural topology and chemical composition. Thus, tight-binding (TB) calculations of the corresponding fundamental network can be used to explore the parameter space to find configurations with intriguing properties before designing the the atomistic 2D polymer network. The vertex-transitive \textbf{fes} lattice, which is also called square-octagon lattice, is rich in interesting topological features including Dirac points and flat bands. Herein, we study its electronic and topological properties within the TB framework using representative parameters for chemical systems. Secondly, we demonstrate that the rational implementation of band structure features obtained from TB calculations into 2D polymers is feasible with a family of 2D polymers possessing \textbf{fes} structure. A one-to-one band structure correspondence between fundamental network and 2D polymers is found. Moreover, changing the relative length of linkers connecting the triangulene units in the 2D polymers reflect tuning of hopping parameters in the TB model. These perturbations allow to open sizeable local band gaps at various positions in the Brillouin zone. From analysis of Berry curvature flux, none of the polymers exhibits a large topologically non-trivial band gap. However, we find a particular configuration of semimetallic characteristics with separate electron and hole pockets, which possess very low effective masses both for electrons (as small as $m^*_\mathrm{e} = 0.05$) and holes (as small as $m^*_\mathrm{h} = 0.01$).

Detailed derivation of the analytical, reciprocal-space approach of Hessian calculation within the self-consistent-charge density functional based tight-binding framework (SCC-DFTB) is presented. This approach provides an accurate and efficient way for obtaining the SCC-DFTB Hessian of periodic systems. Its superiority with respect to the traditional numerical force differentiation method is demonstrated for doped graphene, graphene nanoribbons, boron-nitride nanotubes, bulk zinc-oxide and other systems.

High-level first-principles computations predict blue phosphorene bilayer to be a two-dimensional metal. This structure has not been considered before and was identified by employing a block-diagram scheme that yields the complete set of five high-symmetry stacking configurations of buckled honeycomb layers, and allows their unambiguous classification. We show that all of these stacking configurations are stable or at least metastable configurations both for blue phosphorene and gray arsenene bilayers. For blue phosphorene, the most stable stacking configuration has not yet been reported, and surprisingly it is metallic, while all other arrangements are indirect band gap semiconductors. As it is impossible to interchange the stacking configurations by translations, all of them should be experimentally accessible via the transfer of monolayers. The metallic character of blue phosphorene bilayer is caused by its short interlayer distance of 3.01 {\AA} and offers the exceptional possibility to design single elemental all-phosphorus transistors.

We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The spin-orbit coupling is essential both in forming such Dirac electronic states and stabilizing the artificial molecules by reducing the adatom-substrate interaction. Lead atoms are found to be ideally suited for a maximized relativistic effect. This work initiates the use of novel two dimensional orderings to guide the fabrication of artificial molecules of unprecedented properties., Comment: 7 page, 3 figures

Two-dimensional crystals, single sheets of layered materials, often show distinct properties desired for optoelectronic applications, such as larger and direct band gaps, valley- and spinorbit effects. Being atomically thin, the low amount of material is a bottleneck in photophysical and photochemical applications. Here, we propose the formation of stacks of two-dimensional crystals intercalated with small surfactant molecules. We show, using first principles calculations, that already the very short surfactant methyl amine electronically decouples the layers. We demonstrate the indirect-direct band gap transition characteristic for Group 6 transition metal dichalcogenides experimentally by observing the emergence of a strong photoluminescence signal for ethoxide-intercalated WSe2 and MoSe2 multilayered nanoparticles with lateral size of about 10 nm and beyond. The proposed hybrid materials offer the highest possible density of the two-dimensional crystals with electronic properties typical for monolayers. Variation of the surfactant's chemical potential allows fine-tuning of electronic properties and potentially elimination of trap states caused by defects.

Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state., Comment: 10 pages, 3 figures, 1 table

Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the potential of thin PtSe$_{2}$ films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe$_{2}$ films grown by thermally assisted conversion of Pt at a CMOS-compatible temperature of 400{\deg}C. We report high negative gauge factors of up to -84.8 obtained experimentally from PtSe$_{2}$ strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe$_{2}$ membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory (DFT) calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe$_{2}$ as a very promising candidate for future NEMS applications, including integration into CMOS production lines., Comment: 33 pages, 5 figures, including supporting information with 10 figures

The fully halogenated or hydrogenated B12X12 (X = H, F, Cl, Br and I) clusters are confirmed to be icosahedral. On the other hand, the bare B12 cluster is shown to have a planar structure. A previous study showed that a transformation from an icosahedron to a plane happens when 5 to 7 iodine atoms are substituted. Later, the transition was confirmed to be seven iodine substitutions based on an infrared spectroscopy study. In this study, we investigated the effects of different halogen atoms on the opening of the B12 icosahedral cage by means of density functional theory calculations. We found that the halogen elements do not have significant effects on the geometries of the clusters. The computed IR spectra show similar representative peaks for all halogen substituted clusters. Interestingly, we found a blue-shift in the IR spectra with the increase in the mass of the halogen atoms. Further, we compared the Gibbs free energies at different temperatures for different halogen atoms. The results show that the Gibbs free energy differences between open and close structures of B12X7 become larger when heavier halogen atoms are present. This interesting finding was subsequently investigated by energy decomposition analysis.

A straightforward means to include explicit hydrogen bonds within the Universal Force Field is presented. Instead of treating hydrogen bonds as non-bonded interaction subjected to electrostatic and Lennard-Jones potentials, we introduce an explicit bond with negligible bond order, thus maintaining the structural integrity of the H-bonded complexes and avoiding the necessity to assign arbitrary charges to the system. The explicit hydrogen bond changes the coordination number of the acceptor site and the approach is thus most suitable for systems with under-coordinated atoms, such as many metal-organic frameworks, however, it also shows excellent performance for other systems involving a hydrogen-bonded framework. In particular, it is an excellent means for creating starting structures for molecular dynamics and for investigations employing more sophisticated methods. The approach is validated for the hydrogen bonded complexes in the S22 dataset and then employed for a set of metal-organic frameworks from the Computation-Ready Experimental (CoRE) database and several hydrogen bonded crystals including water ice and clathrates. We show that direct inclusion of hydrogen bonds reduces the maximum error in predicted cell parameters from 66% to only 14% and the mean unsigned error is similarly reduced from 14% to only 4%. We posit that with the inclusion of hydrogen bonding, the solvent-mediated breathing of frameworks such as MIL-53 is now accessible to rapid UFF calculations, which will further the aim of rapid computational scanning of metal-organic frameworks while providing better starting points for electronic structure calculations.

Here, we report by first-principles calculations one new stable 2D Dirac material, Ta2Se3 monolayer. For this system, stable layered bulk phase exists, and exfoliation should be possible. Ta2Se3 monolayer is demonstrated to support two Dirac points close to the Fermi level, achieving the exotic 2D double Dirac semimetal. And like 2D single Dirac and 2D node-line semimetals, spin-orbit coupling could introduce an insulating state in this new class of 2D Dirac semimetals. Moreover, the Dirac feature in this system is layer-dependent and a metal-to-insulator transition is identified in Ta2Se3 when reducing the layer-thickness from bilayer to monolayer. These findings are of fundamental interests and of great importance for nanoscale device applications.

Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe$_2$ is completely recovered if the material is sandwiched in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures. We show by means of density-functional theory that this remarkable and unexpected result is due to defect healing: S atoms of the more reactive MoS$_2$ layers are donated to heal Se vacancy defects in the middle MoSe$_2$ layer. In addition, the trilayer structure exhibits a considerable charge-transfer mediated valley polarization of MoSe$_2$ without the need for resonant excitation. Our fabrication approach, relying solely on simple flake transfer technique, paves the way for the scalable production of large-area TMDC materials with excellent optical quality., Comment: Just accepted for publication in Nano Letters (http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b00904)

The high cost of platinum-based catalysts has hampered the commercialization of polymer electrolyte membrane fuel cells (PEMFCs). Hence, the electronic structure and oxygen reduction ability of [Ti(IV)Pc]2+, Ti(II)Pc titanyl-phthalocyanines, and their tailored peripheral and axial ligand complexes were theoretically investigated to determine non-precious cathode catalysts. Our results revealed that the peripherally substituted and unsubstituted Ti(II)Pc triplet complexes can spontaneously reduce peroxide. The singlet [Ti(IV)Pc]2+ parent complex has a 6.45 eV barrier. However, fluorine substitution at peripheral positions reduced the energy barrier up to 0.45 eV. In addition, chlorine substitution has shown spontaneous peroxide reduction as in the case of triplets. The high catalytic activity of Ti(II)Pc complexes and singlet chlorine substituted complex is attributed to the optimal charge transfer between dioxygen molecule and the novel catalyst complexes. As a result, Ti(II)Pcs and chlorine substituted singlet complexes are considered as potential substitutions for the noble Pt-based catalyst for the PEMFCs., Comment: 41 pages, 7 figures and 5 tables

We propose a two-dimensional crystal which possesses low indirect band gaps of 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilities similar to those of phosphorene: GeP3. GeP3 has a stable three-dimensional layered bulk counterpart which is metallic and is known from experiment since 1970. It has a small cleavage energy, which suggests exfoliation of bulk material as viable means for the preparation of mono- and few-layer materials. The material shows strong interlayer quantum confinement effects, resulting in a band gap reduction from mono- to bilayer, and then to a semiconductor-metal transition between bi- and triple layer. Under biaxial strain, the indirect band gap can be turned into a direct one. Pronounced light absorption in the spectral range from ~600 to 1400 nm is predicted for monolayer and bilayer and promises applications in photovoltaics., Comment: 14 pages, 5 figures, submitted

We report a time-dependent density functional based tight-binding (TD-DFTB) scheme for the calculation of UV/Vis spectra, explicitly taking into account the excitation of nuclear vibrations via the adiabatic Hessian Franck-Condon (AH|FC) method with a harmonic approximation for the nuclear wavefunction. The theory of vibrationally resolved UV/Vis spectroscopy is first summarized from the viewpoint of TD-DFTB. The method is benchmarked against time-dependent density functional theory (TD-DFT) calculations for strongly dipole allowed excitations in various aromatic and polar molecules. Using the recent 3ob:freq parameter set of Elstner's group, very good agreement with TD-DFT calculations using local functionals was achieved., Comment: 14 pages, 19 figures

Two-dimensional (2D) topological insulators (TIs), a new state of quantum matter, are promising for achieving the low-power-consuming electronic devices owning to the remarkable robustness of their conducting edge states against backscattering. Currently, the major challenge to further studies and possible applications is the lack of suitable materials, which should be with high feasibility of fabrication and sizeable nontrivial gaps. Here, we demonstrate through first-principles calculations that SiTe 2D crystal is a promising 2D TI with a sizeable nontrivial gap of 0.220 eV. This material is dynamically and thermally stable. Most importantly, it could be easily exfoliated from its three-dimensional superlattice due to the weakly bonded layered structure. Moreover, strain engineering can effectively control its nontrivial gap and even induce a topological phase transition. Our results provide a realistic candidate for experimental explorations and potential applications of 2D TIs.

We evaluate the performance of spin-polarized DFTB within the SCC-DFTB (also known as DFTB2) model. The method has been implemented in the ADF modeling suite. We briefly review how spin polarization is incorporated into the DFTB2 method and validate the method in terms of structural parameters and energy using the GMTKN30 test set, from which we used 288 spin-polarized systems., Comment: The final publication is available at Springer via http://dx.doi.org/10.1007/s00214-016-1991-9

We propose a new method of calculating electronically excited states that combines a density functional theory (DFT) based ground state calculation with a linear response treatment that employs approximations used in the time-dependent density functional based tight binding (TD-DFTB) approach. The new method termed TD-DFT+TB does not rely on the DFTB parametrization and is therefore applicable to systems involving all combinations of elements. We show that the new method yields UV/Vis absorption spectra that are in excellent agreement with computationally much more expensive time-dependent density functional theory (TD-DFT) calculations. Errors in vertical excitation energies are reduced by a factor of two compared to TD-DFTB., Comment: 14 pages, 6 figures

So far, several transition metal dichalcogenides (TMDCs) based two-dimensional (2D) topological insulators (TIs) have been discovered, all of them based on a tetragonal lattice. However, in 2D crystals, the hexagonal rather than the tetragonal symmetry is the most common motif. Here, based on first-principles calculations, we propose a new class of stable 2D TMDCs of composition MX2 (M=Mo, W, X=S, Se, Te) with a hexagonal lattice. They are all in the same stability range as other 2D TMDC allotropes that have been demonstrated experimentally, and they are identified to be practical 2D TIs with large band gaps ranging from 41 to 198 meV, making them suitable for applications at room-temperature. Besides, in contrast to tetragonal 2D TMDs, their hexagonal lattice will greatly facilitate the integration of theses novel TI states van-der-Waals crystals with other hexagonal or honeycomb materials, and thus provide a route for 2D-material-based devices for wider nanoelectronic and spintronic applications. The nontrivial band gaps of both WSe2 and WTe2 2D crystals are 198 meV, which are larger than that in any previously reported TMDC-based TIs. These large band gaps entirely stem from the strong spin-orbit coupling strength within the d orbitals of Mo/W atoms near the Fermi level. Our findings will significantly broaden the scientific and technological impact of both 2D TIs and TMDCs.

We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by -27 +- 2 meV per percent of strain. This is in agreement with our density-functional theory calculations, which estimate a modulation of -32 meV per percent of strain, taking into account the role of deformation of the underlying substrate upon bending. Finally, due to its narrow PL spectra as compared with that of MoS2, we show that MoSe2 provides a more precise determination of small changes in strain making it the ideal 2D material for strain applications., Comment: 14 pages, 6 figures including Supporting Information (2 pages, 3 figures)

Two-dimensional (2D) topological insulators (TIs) hold promise for applications in spintronics based on the fact that the propagation direction of edge electrons of a 2D TI is robustly linked to their spin origination. Here, with the use of first-principles calculations, we predict a family of robust 2D TIs in monolayer square transition metal dichalcogenides (MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2). Sizeable intrinsic nontrivial bulk band gaps ranging from 24 to 187 meV are obtained, guarantying the quantum spin Hall (QSH) effect observable at room temperature in these new 2D TIs. Significantly different from most known 2D TIs with comparable band gaps, these sizeable energy gaps originate from the strong spin-orbit interaction related to the pure d electrons of the Mo/W atoms around the Fermi level. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating in the middle of the bulk band gap, and their topologically nontrivial states are also confirmed with nontrivial topological invariant Z2 = 1. More interestingly, by controlling the applied strain, a topological quantum phase transition between a QSH phase and a metallic phase or a trivial insulating phase can be realized in these 2D materials, and the detailed topological phase diagram is established., Comment: 15 pages,4 figures

The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extraordinary large bulk band gaps which are well above room-temperature, allowing for viable applications in room-temperature spintronic devices. More importantly, most of these systems display large bulk band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which are larger than any IATIs ever reported. The nontrivial topological situation in these systems is confirmed by the identified band inversion of the band structures and an explicit demonstration of the topological edge states. Interestingly, the nontrivial band order characteristics are intrinsic to most of these materials and are not subject to spin-orbit coupling. Owning to their asymmetric structures, remarkable Rashba spin splitting is produced in both the valence and conduction bands of these systems. These predictions strongly revive these new systems as excellent candidates for IATI-based novel applications., Comment: 17 pages,5figures

During the last two decades density functional based linear response approaches have become the de facto standard for the calculation of optical properties of small and medium-sized molecules. At the heart of these methods is the solution of an eigenvalue equation in the space of single-orbital transitions, whose quickly increasing number makes such calculations costly if not infeasible for larger molecules. This is especially true for time-dependent density functional tight binding (TD-DFTB), where the evaluation of the matrix elements is inexpensive. For the relatively large systems that can be studied the solution of the eigenvalue equation therefore determines the cost of the calculation. We propose to do an oscillator strength based truncation of the single-orbital transition space to reduce the computational effort of TD-DFTB based absorption spectra calculations. We show that even a sizeable truncation does not destroy the principal features of the absorption spectrum, while naturally avoiding the unnecessary calculation of excitations with small oscillator strengths. We argue that the reduced computational cost of intensity-selected TD-DFTB together with its ease of use compared to other methods lowers the barrier of performing optical properties calculations of large molecules, and can serve to make such calculations possible in a wider array of applications., Comment: 17 pages, 7 figures

The role of nuclear quantum effects on the adsorption of molecular hydrogen in metal-organic frameworks (MOFs) has been investigated on grounds of Grand-Canonical Quantized Liquid Density-Functional Theory (GC-QLDFT) calculations. For this purpose, we have carefully validated classical H2 -host interaction potentials that are obtained by fitting Born-Oppenheimer ab initio reference data. The hydrogen adsorption has first been assessed classically using Liquid Density-Functional Theory (LDFT) and the Grand-Canonical Monte Carlo (GCMC) methods. The results have been compared against the semi-classical treatment of quantum effects by applying the Feynman-Hibbs correction to the Born-Oppenheimer-derived potentials, and by explicit treatment within the Grand-Canonical Quantized Liquid Density-Functional Theory (GC-QLDFT). The results are compared with experimental data and indicate pronounced quantum and possibly many-particle effects. After validation calculations have been carried out for IRMOF-1 (MOF-5), GC-QLDFT is applied to study the adsorption of H2 in a series of MOFs, including IRMOF-4, -6, -8, -9, -10, -12, -14, -16, -18 and MOF-177. Finally, we discuss the evolution of the H2 quantum fluid with increasing pressure and lowering temperature.

We report that an external electric field applied normal to bilayers of transition-metal dichalcogenides TX2, M = Mo, W, X = S, Se, creates significant spin-orbit splittings and reduces the electronic band gap linearly with the field strength. Contrary to the TX2 monolayers, spin-orbit splittings and valley polarization are absent in bilayers due to the presence of inversion symmetry. This symmetry can be broken by an electric field, and the spin-orbit splittings in the valence band quickly reach similar values as in the monolayers (145 meV for MoS2... 418 meV for WSe2) at saturation fields less than 500 mV A-1. The band gap closure results in a semiconductor-metal transition at field strength between 1.25 (WX2) and 1.50 (MoX2) V A-1. Thus, by using a gate voltage, the spin polarization can be switched on and off in TX2 bilayers, thus activating them for spintronic and valleytronic applications., Comment: Submitted to PRB, 11 pages, 4 figures, 2 tables

The influence of an external electric field on single-layer transition-metal dichalcogenides TX2 with T = Mo, W and X = S, Se (MoWSeS) have been investigated by means of density-functional theory within two-dimensional periodic boundary conditions under consideration of relativistic effects including the spin-orbit interactions. Our results show that the external field modifies the band structure of the monolayers, in particular the conduction band. This modification has, however, very little influence on the band gap and effective masses of holes and electrons at the K point, and also the spin-orbit splitting of these monolayers is almost unaffected. Our results indicate a remarkable stability of the electronic properties of TX2 monolayers with respect to gate voltages. A reduction of the electronic band gap is observed only starting from field strengths of 2.0 V per {\AA} (3.5 V per {\AA}) for selenides (sulphides), and the transition to a metallic phase would occur at fields of 4.5 V per {\AA} (6.5 V per {\AA})., Comment: submitted to PRB rapid communication, 9 pages, 4 figures, 2 tables

Surprisingly low solubility and toxicity of Fe-doped ZnO nanoparticles is elucidated on the basis of first-principles calculations. Various ZnO surfaces that could be present in nanoparticles are subject to substitutional Fe doping. We show that Fe stabilizes polar instable surfaces, while non-polar surfaces, namely (1010) and (1120), remain intact. Polar surfaces can be stabilized indirectly through Fe2+-Fe3+ pair assisted charge transfer, what reduces surface polarity and therefore, the solubility in polar solvents., Comment: PRL accepted, 5 pages, 4 figures 1 table

Various types of defects in MoS2 monolayers and their influence on the electronic structure and transport properties have been studied using the Density-Functional based Tight-Binding method in conjunction with the Green's Function approach. Intrinsic defects in MoS2 monolayers significantly affect their electronic properties. Even at low concentration they considerably alter the quantum conductance. While the electron transport is practically isotropic in pristine MoS2, strong anisotropy is observed in the presence of defects. Localized mid-gap states are observed in semiconducting MoS2 that do not contribute to the conductivity but direction-dependent scatter the current, and that the conductivity is strongly reduced across line defects and selected grain boundary models., Comment: 13 pages, 6 figures, submition to Phys. Rev. B

The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing strain through mechanical contacts is difficult for TMD monolayers, but state-of-the-art for TMD nanotubes. We show using density-functional theory that similar electromechanical properties as in monolayer and bulk TMDs are found for large diameter TMD single- (SWNT) and multi-walled nanotubes (MWNTs). The semiconductor-metal transition occurs at elongations of 16 %. We show that Raman spectroscopy is an excellent tool to determine the strain of the nanotubes and hence monitor the progress of that nanoelectromechanical experiment in situ. TMD MWNTs show twice the electric conductance compared to SWNTs, and each wall of the MWNTs contributes to the conductance proportional to its diameter., Comment: Submitted to Scientific Reports, 7 figures, 1 table, SI available

The stacking orders in layered hexagonal boron nitride bulk and bilayers are studied using high-level ab initio theory (local second-order Moller-Plesset perturbation theory, LMP2). Our results show that both electrostatic and London dispersion interactions are responsible for interlayer distance and stacking order, with AA' being the most stable one. The minimum energy sliding path includes only the AA' high-symmetry stacking, and the energy barrier is 3.4 meV per atom for the bilayer. State-of-the-art Density-functionals with and without London dispersion correction fail to correctly describe the interlayer energies with the exception of PBEsol that agrees very well with our LMP2 results and experiment., Comment: Accepted to Phys. Rev. Lett., 10 pages, 2 figures, SI provided

Quantized Liquid Density-Functional Theory [Phys. Rev. E 2009, 80, 031603], a method developed to assess the adsorption of gas molecules in porous nanomaterials, is reformulated within the grand canonical ensemble. With the grand potential it is possible to compare directly external and internal thermodynamic quantities. In our new implementation, the grand potential is minimized utilizing the Car-Parrinello approach and gives, in particular for low temperature simulations, a significant computational advantage over the original canonical approaches. The method is validated against original QLDFT, and applied to model potentials and graphite slit pores., Comment: 19 pages, 5 figures

MoS2 and WS2 layered transition-metal dichalcogenides are indirect band gap semiconductors in their bulk forms. Thinned to a monolayer, they undergo a transition and become direct band gap materials. Layered structures of that kind can be folded to form nanotubes. We present here the electronic structure comparison between bulk, monolayered and tubular forms of transition metal disulfides using first-principle calculations. Our results show that armchair nanotubes remain indirect gap semiconductors, similar to the bulk system, while the zigzag nanotubes, like a monolayer, are direct gap materials, what suggests interesting potential applications in optoelectronics., Comment: published in EPJ B, 9 pages, 8 figures

The structures, cohesive energies and HOMO-LUMO gaps of graphene nanoflakes and corresponding polycyclic aromatic hydrocarbons for a large variety of size and topology are investigated at the density functional based tight-binding level. Polyacene-like and honeycomb-like graphene nanoflakes were chosen as the topological limit structures. The influence of unsaturated edge atoms and dangling bonds on the stability is discussed. Our survey shows a linear trend for the cohesive energy as function of Ns/N (N - total number of atoms and Ns is number of edge atoms). For the HOMO-LUMO gap the trends are more complex and include also the topology of the edges., Comment: published in PRB, 18 pages, 9 figures

The performance of two modern density-functionals, HSE06 and TB-mBJ, on predicting electronic structures of metal oxides, chalcogenides and nitrides, is studied in terms of band gaps, band structure and projected density-of-states. Contrary to GGA, hybrid functionals and GGA+U, both new functionals are able to predict band gaps with an appreciable accuracy of 25% and thus allow the screening of various classes of (mixed) metal oxides at modest computational cost. The calculated electronic structures are largely unaffected by the choice of basis functions and software implementation., Comment: Rejected from PRB