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We present experiments on reservoir computing (RC) using a network of vertical-cavity surface-emitting lasers (VCSELs) that we diffractively couple via an external cavity. Our optical reservoir computer consists of 24 physical VCSEL nodes. We evaluate the system's memory and solve the 2-bit XOR task and the 3-bit header recognition (HR) task with bit error ratios (BERs) below 1\,\% and the 2-bit digital-to-analog conversion (DAC) task with a root-mean-square error (RMSE) of 0.067.

Networks of optically coupled semiconductor lasers are of high interest for fundamental investigations and for enabling numerous technological applications in material processing, lighting and information processing. Still, experimental realizations of large networks of such elements employing a scalable concepts have so far been been lacking. Here, we present a network 22 of the vertical-cavity surface-emitting lasers in a $5 \times 5$ square lattice array via. Crucially, the array allows individual control over each laser's pump current, which we leverage spectrally align the array. Leveraging diffractive coupling through an external cavity, 22 lasers are mutually injection locked, and, furthermore, we demonstrate their simultaneous phase locking to an external injection laser. The VCSEL network is a promising platform for experimental investigations of complex systems and has direct applications as a photonic neural network. The scalability of the concept opens future possibilities for systems comprising many more individual lasers.

Deep neural networks (DNNs) are reshaping the field of information processing. With their exponential growth challenging existing electronic hardware, optical neural networks (ONNs) are emerging to process DNN tasks in the optical domain with high clock rates, parallelism and low-loss data transmission. However, to explore the potential of ONNs, it is necessary to investigate the full-system performance incorporating the major DNN elements, including matrix algebra and nonlinear activation. Existing challenges to ONNs are high energy consumption due to low electro-optic (EO) conversion efficiency, low compute density due to large device footprint and channel crosstalk, and long latency due to the lack of inline nonlinearity. Here we experimentally demonstrate an ONN system that simultaneously overcomes all these challenges. We exploit neuron encoding with volume-manufactured micron-scale vertical-cavity surface-emitting laser (VCSEL) transmitter arrays that exhibit high EO conversion (<5 attojoule/symbol with $V_\pi$=4 mV), high operation bandwidth (up to 25 GS/s), and compact footprint (<0.01 mm$^2$ per device). Photoelectric multiplication allows low-energy matrix operations at the shot-noise quantum limit. Homodyne detection-based nonlinearity enables nonlinear activation with instantaneous response. The full-system energy efficiency and compute density reach 7 femtojoules per operation (fJ/OP) and 25 TeraOP/(mm$^2\cdot$ s), both representing a >100-fold improvement over state-of-the-art digital computers, with substantially several more orders of magnitude for future improvement. Beyond neural network inference, its feature of rapid weight updating is crucial for training deep learning models. Our technique opens an avenue to large-scale optoelectronic processors to accelerate machine learning tasks from data centers to decentralized edge devices., Comment: 10 pages, 5 figures

Spin-controlled lasers are highly interesting photonic devices and have been shown to provide ultra-fast polarization dynamics in excess of 200 GHz. In contrast to conventional semiconductor lasers their temporal properties are not limited by the intensity dynamics, but are governed primarily by the interaction of the spin dynamics with the birefringent mode splitting that determines the polarization oscillation frequency. Another class of modern semiconductor lasers are high-beta emitters which benefit from enhanced light-matter interaction due to strong mode confinement in low-mode-volume microcavities. In such structures, the emission properties can be tailored by the resonator geometry to realize for instance bimodal emission behavior in slightly elliptical micropillar cavities. We utilize this attractive feature to demonstrate and explore spin-lasing effects in bimodal high-beta quantum dot micropillar lasers. The studied microlasers with a beta-factor of 4% show spin-laser effects with experimental polarization oscillation frequencies up to 15 GHz and predicted frequencies up to about 100 GHz which are controlled by the ellipticity of the resonator. Our results reveal appealing prospects for very compact, ultra-fast and energy-efficient spin-lasers and can pave the way for future purely electrically injected spin-lasers enabled by short injection path lengths.

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application., Comment: 15 pages, 3 figures, improved manuscript text and figures

Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge on control and on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths.

We report on the realization of micropillars with site-controlled quantum dots (SCQDs) in the active layer. The SCQDs are grown via the buried stressor approach which allows for the positioned growth and device integration of a controllable number of QDs with high optical quality. This concept is very powerful as the number and the position of SCQDs in the cavity can be simultaneously controlled by the design of the buried stressor. The fabricated micropillars exhibit a high degree of position control for the QDs above the buried stressor and $Q$-factors of up to 12000 at an emission wavelength around 930 nm. We experimentally analyze and numerically model the cavity $Q$-factor, the mode volume, the Purcell factor and the photon-extraction efficiency as a function of the aperture diameter of the buried stressor. Exploiting these SCQD micropillars, we experimentally observe the Purcell enhancement in the single-QD regime with $F_P$ = 4.3 $\pm$ 0.3., Comment: 5 pages, 4 figures

The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in-situ electron-beam lithography. At low temperature, CSAR 62 exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stability is almost temperature independent and it is found that CSAR 62 does not suffer from peeling which limits the low temperature application of the standard electron-beam resist PMMA. As such, CSAR 62 is a very promising negative-tone resist for in-situ electron-beam lithography of high quality nanostructures at low temperature.