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Magnetic sensing beyond linear regime could broaden the frequency range of detectable magnetic fields, which is crucial to various microwave and quantum applications. Recently, nonlinear interactions in diamond nitrogen-vacancy (NV) centers, one of the most extensively studied quantum magnetic sensors, are proposed to realize magnetic sensing across arbitrary frequencies. In this work, we enhance these capabilities by exploiting the nonlinear spin dynamics in hybrid systems of NV centers and ferri- or ferro-magnetic (FM) thin films. We study the frequency mixing effect in the hybrid NV/magnon systems, and demonstrate that the introduction of FM not only amplifies the intensity of nonlinear resonance signals that are intrinsic to NV spins, but also enables novel frequency mixings through parametric pumping and nonlinear magnon scattering effects. The discovery and understanding of the magnetic nonlinearities in hybrid NV/magnon systems position them as a prime candidate for magnetic sensing with a broad frequency range and high tunablity, particularly meaningful for nanoscale, dynamical, and non-invasive materials characterization.

Nonlinear phenomena represent one of the central topics in the study of wave-matter interactions and constitute the key blocks for various applications in optical communication, computing, sensing, and imaging. In this work, we show that by employing the interactions between microwave photons and electron spins of nitrogen-vacancy (NV) centers, one can realize a variety of nonlinear effects, ranging from the resonance at the sum or difference frequency of two or more waves to electromagnetically induced transparency from the interference between spin transitions. We further verify the phase coherence through two-photon Rabi-oscillation measurements. The highly sensitive, optically detected NV-center dynamics not only provides a platform for studying magnetically induced nonlinearities but also promises novel functionalities in quantum control and quantum sensing., Comment: 15 pages and 10 figures

Realization of novel topological phases in magnonic band structures represents a new opportunity for the development of spintronics and magnonics with low power consumption. In this work, we show that in antiparallelly aligned magnetic multilayers, the long-range, chiral dipolar interaction generates bulk bands with non-zero Chern integers and magnonic surface states carrying chiral spin currents. The surface states are strictly localized and can be easily toggled between non-trivial and trivial phases through an external magnetic field. The realization of chiral surface spin currents in this dipolarly coupled heterostructure represents a magnonic implementation of the coupled wire model that has been extensively explored in electronic systems. Our work presents an easy-to-implement system for realizing topological magnonic surface states and low-dissipation spin current transport in a tunable manner.

Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the effective modulation of EB remains challenging, since the alternant spins at the AFM/FM interface are strongly pinned by the AFM layer. Voltage tuning of EB through the magnetoelectric coupling provides a potential way to achieve a rapid magnetization switching in an energy-efficient manner. Nevertheless, the interfacial strain mediation of perpendicular EB induced by E-field remains unexplored. In this work, we obtain perpendicular EB nanostructure by room-temperature fabrication process, and demonstrate the voltage tunable perpendicular EB in Pt/IrMn/(Co/Pt)2/Ta/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructure. To enhance the voltage control effect on perpendicular EB, we further investigate both strain-mediated magnetoelectric coupling and ionic liquid gating method in the thinned EB system with the structure of Pt/IrMn/Co/Pt/Ta. As a result, the voltage induced lattice distortion effectively transmits to the AFM/FM interface, while the charge accumulation in gating method generates a relatively large hysteresis loop offset that has not been observed before at room temperature. The voltage manipulation of perpendicular EB at room temperature provides new possibilities towards novel AFM devices and memories with great energy-efficiency and ultra-high density., Comment: 21 pages, 6 figures

Voltage modulation of yttrium iron garnet (YIG) with compactness, high speed response, energy efficiency and both practical/theoretical siginificances can be widely applied to various YIG based spintronics such as spin Hall, spin pumping, spin Seeback effects. Here we initial an ionic modulation of interfacial magnetism process on YIG/Pt bilayer heterostructures, where the Pt capping would influence the ferromagnetic (FMR) field position significantly, and realize a significant magnetism enhancement in bilayer system. A large voltage induced FMR field shifts of 690 Oe has been achieved in YIG (13 nm)/Pt (3 nm) multilayer heterostructures under a small voltage bias of 4.5 V. The remarkable ME tunability comes from voltage induced extra FM ordering in Pt metal layer near the Pt/YIG interface. The first-principle theoretical simulation reveal that the electrostatic doping induced Pt5+ ions have strong magnetic ordering due to uncompensated d orbit electrons. The large voltage control of FMR change pave a foundation towards novel voltage tunable YIG based spintronics., Comment: 21 pages, 4 figures in main text and 7 figures in support information

Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here we investigate resonant magnetization dynamics in ferromagnet/ferrolectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.